Two different mechanisms for determining effective work function (Φm,eff) on high-k - Physical understanding and wider tunability of Φm,eff-

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2006, Pages 180-181

  Kadoshima, M ^a   Ogawa, A ^a   Ota, H ^a   Ikeda, M ^a   Takahashi, M ^a   Satake, H ^a   Nabatame, T ^a   Toriumi, A ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; GATE DIELECTRICS; HAFNIUM COMPOUNDS; SILICON;

GATE ELECTRODES; INTERFACE DIPOLES;

WORK FUNCTION;

EID: 41149111980     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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