메뉴 건너뛰기




Volumn 54, Issue 11, 2007, Pages 2991-2997

Impact of a nonideal metal gate on surface optical phonon-limited mobility in high-κ gated MOSFETs

Author keywords

Metal gate; Mobility; MOSFET; Surface optical (SO) phonons

Indexed keywords

CARRIER CONCENTRATION; GATES (TRANSISTOR); PERMITTIVITY; PHONON SCATTERING;

EID: 36248991844     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.907135     Document Type: Article
Times cited : (21)

References (28)
  • 2
    • 33646508741 scopus 로고    scopus 로고
    • On the mobility in high-k/metal gate MOSFETs: Evaluation of the high-k phonon scattering impact
    • Apr
    • O. Weber, M. Casse, L. Tbevenod, F. Ducroquet, T. Ernst, and S. Deleonibus, "On the mobility in high-k/metal gate MOSFETs: Evaluation of the high-k phonon scattering impact," Solid State Electron., vol. 50, no. 4, pp. 626-631, Apr. 2006.
    • (2006) Solid State Electron , vol.50 , Issue.4 , pp. 626-631
    • Weber, O.1    Casse, M.2    Tbevenod, L.3    Ducroquet, F.4    Ernst, T.5    Deleonibus, S.6
  • 3
    • 0035504954 scopus 로고    scopus 로고
    • Effective electron mobility in Si inversion layers in metal-oxide-semiconductor systems with a high-k insulator: The role of remote phonon scattering
    • Nov
    • M. V. Fischetti, D. A. Neumayer, and E. A. Cartier, "Effective electron mobility in Si inversion layers in metal-oxide-semiconductor systems with a high-k insulator: The role of remote phonon scattering," J. Appl. Phys., vol. 90, no. 9, pp. 4587-4608, Nov. 2001.
    • (2001) J. Appl. Phys , vol.90 , Issue.9 , pp. 4587-4608
    • Fischetti, M.V.1    Neumayer, D.A.2    Cartier, E.A.3
  • 4
    • 0842322723 scopus 로고    scopus 로고
    • Inversion channel mobility in high-k high performance MOSFETs
    • Z. Ren, M. Fischetti, E. Gusev, E. Cartier, and M. Chudzik, "Inversion channel mobility in high-k high performance MOSFETs," in IEDM Tech. Dig., 2003, pp. 793-796.
    • (2003) IEDM Tech. Dig , pp. 793-796
    • Ren, Z.1    Fischetti, M.2    Gusev, E.3    Cartier, E.4    Chudzik, M.5
  • 7
    • 0006247555 scopus 로고
    • Reduction of interface phonon modes using metal-semiconductor heterostructures
    • Mar
    • A. R. Bhatt, K. W. Kim, M. A. Stroscio, and G. J. lafrate, "Reduction of interface phonon modes using metal-semiconductor heterostructures," J. Appl. Phys., vol. 73, no. 5, pp. 2338-2342, Mar. 1993.
    • (1993) J. Appl. Phys , vol.73 , Issue.5 , pp. 2338-2342
    • Bhatt, A.R.1    Kim, K.W.2    Stroscio, M.A.3    lafrate, G.J.4
  • 8
    • 0000568466 scopus 로고    scopus 로고
    • x compounds
    • Jul
    • x compounds," J. Appl. Phys., vol. 86, no. 1, pp. 346-350, Jul. 1999.
    • (1999) J. Appl. Phys , vol.86 , Issue.1 , pp. 346-350
    • Kang, J.H.1    Kim, K.J.2
  • 9
    • 0032164813 scopus 로고    scopus 로고
    • An estimate of the electron effective mass in titanium nitride using UPS and EELS
    • Sep
    • C. G. H. Walker, J. A. D. Matthew, C. A. Anderson, and N. M. D. Brown, "An estimate of the electron effective mass in titanium nitride using UPS and EELS," Surf. Sci., vol. 412/413, pp. 405-414, Sep. 1998.
    • (1998) Surf. Sci , vol.412-413 , pp. 405-414
    • Walker, C.G.H.1    Matthew, J.A.D.2    Anderson, C.A.3    Brown, N.M.D.4
  • 13
    • 0032623974 scopus 로고    scopus 로고
    • Electric-field penetration into metals: Consequences for high-dielectric-constant capacitors
    • Apr
    • C. T. Black and J. J. Weiser, "Electric-field penetration into metals: Consequences for high-dielectric-constant capacitors," IEEE Trans. Electron Devices, vol. 46, no. 4, pp. 776-780, Apr. 1999.
    • (1999) IEEE Trans. Electron Devices , vol.46 , Issue.4 , pp. 776-780
    • Black, C.T.1    Weiser, J.J.2
  • 14
    • 0000325754 scopus 로고    scopus 로고
    • Combined electrical and mechanical properties of titanium nitride thin films as metallization materials
    • Nov
    • P. Patsalas, C. Charitidis, S. Logothetidis, C. A. Dimitriadis, and O. Valassiades, "Combined electrical and mechanical properties of titanium nitride thin films as metallization materials," J. Appl. Phys., vol. 86, no. 9, pp. 5296-5298, Nov. 1999.
    • (1999) J. Appl. Phys , vol.86 , Issue.9 , pp. 5296-5298
    • Patsalas, P.1    Charitidis, C.2    Logothetidis, S.3    Dimitriadis, C.A.4    Valassiades, O.5
  • 15
    • 34547865065 scopus 로고    scopus 로고
    • Structural and optical characterization of semiconducting TiN nanoparticles thin film
    • Jan
    • S. Tanemura, L. Miao, Y. Kajino, and M. Tanemura, "Structural and optical characterization of semiconducting TiN nanoparticles thin film," Jpn. J. Appl. Phys., vol. 46, no. 1, pp. 356-361, Jan. 2007.
    • (2007) Jpn. J. Appl. Phys , vol.46 , Issue.1 , pp. 356-361
    • Tanemura, S.1    Miao, L.2    Kajino, Y.3    Tanemura, M.4
  • 16
    • 36149024702 scopus 로고
    • Optical properties of Ag and Cu
    • Nov
    • H. Ehrenreich and H. R. Philipp, "Optical properties of Ag and Cu," Phys. Rev., vol. 128, no. 4, pp. 1622-1629, Nov. 1962.
    • (1962) Phys. Rev , vol.128 , Issue.4 , pp. 1622-1629
    • Ehrenreich, H.1    Philipp, H.R.2
  • 18
    • 34247391408 scopus 로고    scopus 로고
    • On the impact of high-κ, gate stacks on mobility: A Monte Carlo study including coupled SO phonon-plasmon scattering
    • Sep
    • G. Ferrari, J. Watling, S. Roy, J. Barker, A. Asenov, P. Zeitzoff, and G. Bersuker, "On the impact of high-κ, gate stacks on mobility: A Monte Carlo study including coupled SO phonon-plasmon scattering," J. Comput. Electron., vol. 6, no. 1-3, pp. 1-5, Sep. 2007.
    • (2007) J. Comput. Electron , vol.6 , Issue.1-3 , pp. 1-5
    • Ferrari, G.1    Watling, J.2    Roy, S.3    Barker, J.4    Asenov, A.5    Zeitzoff, P.6    Bersuker, G.7
  • 19
    • 34247360298 scopus 로고    scopus 로고
    • Electron mobility in silicon and germanium inversion layers: The role of remote phonon scattering
    • Sep
    • T. O'Regan and M. Fischetti, "Electron mobility in silicon and germanium inversion layers: The role of remote phonon scattering," J. Comput. Electron., vol. 6, no. 1-3, pp. 81-84, Sep. 2007.
    • (2007) J. Comput. Electron , vol.6 , Issue.1-3 , pp. 81-84
    • O'Regan, T.1    Fischetti, M.2
  • 21
    • 35949025517 scopus 로고
    • The Monte-Carlo method for the solution of charge transport in semiconductors with applications to covalent materials
    • Jul
    • C. Jacoboni and L. Reggiani, "The Monte-Carlo method for the solution of charge transport in semiconductors with applications to covalent materials," Rev. Mod. Phys., vol. 55, no. 3, pp. 645-705, Jul. 1983.
    • (1983) Rev. Mod. Phys , vol.55 , Issue.3 , pp. 645-705
    • Jacoboni, C.1    Reggiani, L.2
  • 23
    • 0000741169 scopus 로고    scopus 로고
    • Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained Si metal-oxide-semiconductor field-effect transistors
    • Aug
    • S. I. Takagi, J. L. Hoyt, J. J. Welser, and J. F. Gibbons, "Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained Si metal-oxide-semiconductor field-effect transistors," J. Appl. Phys., vol. 80, no. 3, pp. 1567-1577, Aug. 1996.
    • (1996) J. Appl. Phys , vol.80 , Issue.3 , pp. 1567-1577
    • Takagi, S.I.1    Hoyt, J.L.2    Welser, J.J.3    Gibbons, J.F.4
  • 24
    • 85032069152 scopus 로고
    • Electronic properties of two-dimensional systems
    • Apr
    • T. Ando, A. B. Fowler, and F. Stern, "Electronic properties of two-dimensional systems," Rev. Mod. Phys., vol. 54, no. 2, pp. 437-672, Apr. 1982.
    • (1982) Rev. Mod. Phys , vol.54 , Issue.2 , pp. 437-672
    • Ando, T.1    Fowler, A.B.2    Stern, F.3
  • 25
    • 4243227379 scopus 로고
    • Monte-Carlo study of electron-transport in silicon inversion-layers
    • Jul
    • M. V. Fischetti and S. E. Laux, "Monte-Carlo study of electron-transport in silicon inversion-layers," Phys. Rev. B, Condens. Matter, vol. 48, no. 4, pp. 2244-2274, Jul. 1993.
    • (1993) Phys. Rev. B, Condens. Matter , vol.48 , Issue.4 , pp. 2244-2274
    • Fischetti, M.V.1    Laux, S.E.2
  • 26
    • 0000805232 scopus 로고    scopus 로고
    • Long-range Coulomb interactions in small Si devices - Part II: Effective electron mobility in thin-oxide structures
    • Jan
    • M. V. Fischetti, "Long-range Coulomb interactions in small Si devices - Part II: Effective electron mobility in thin-oxide structures," J. Appl. Phys., vol. 89, no. 2, pp. 1232-1250, Jan. 2001.
    • (2001) J. Appl. Phys , vol.89 , Issue.2 , pp. 1232-1250
    • Fischetti, M.V.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.