Remote phonon scattering in field-effect transistors with a high κ insulating layer

Journal of Applied Physics

Volumn 103, Issue 1, 2008, Pages

  Laikhtman, B ^a   Solomon, P M ^b  

^a HEBREW UNIVERSITY OF JERUSALEM   (Israel)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMANN EQUATION; ELECTRONS; FIELD EFFECT TRANSISTORS; INSULATING MATERIALS; PERMITTIVITY; SPECTRUM ANALYSIS;

GATE SCREENING; METALLIC GATES; REMOTE ELECTRON PHONON SCATTERING; REMOTE PHONON SCATTERING;

PHONON SCATTERING;

EID: 38149059787     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2826951     Document Type: Article

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