Effects of strain on the carrier mobility in silicon nanowires

Nano Letters

Volumn 12, Issue 7, 2012, Pages 3545-3550

  Niquet, Yann Michel ^a   Delerue, Christophe ^b   Krzeminski, Christophe ^b  

^a Institut Nanosciences et Cryogénie INAC   (France)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

Modeling; Nanowires; Phonons; Silicon; Strains; Transport

Indexed keywords

EFFECTS OF STRAINS; ELECTRONS AND HOLES; PROCESS-INDUCED STRAIN; SILICON NANOWIRES; STRAIN ENGINEERING; STRAINED SILICON NANOWIRES; TIGHT BINDING; TRANSPORT;

CARRIER MOBILITY; MODELS; NANOWIRES; PHONONS; SILICON; TRANSPORT PROPERTIES;

STRAIN;

EID: 84863837836     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl3010995     Document Type: Article

References (49)

1. Colinge, J.-P. Solid-State Electron. 2004, 48, 897-905
2. McAlpine, M.; Friedman, R.; Jin, S.; Lin, K.; Wang, W.; Lieber, C. Nano Lett. 2003, 3, 1531-1535
3. Lu, W.; Xie, P.; Lieber, C. M. IEEE Trans. Electron Devices 2008, 55, 2859-2876
4. Koo, J.; Jeon, Y.; Lee, M.; Kim, S. Jpn. J. Appl. Phys. 2011, 50, 065001
5. Liu, X.; Long, Y.-Z.; Liao, L.; Duan, X.; Fan, Z. ACS Nano 2012, 6, 1888-1900
6. Singh, N.; Agarwal, A.; Bera, L.; Liow, T.; Yang, R.; Rustagi, S.; Tung, C.; Kumar, R.; Lo, G.; Balasubramanian, N.; Kwong, D.-L. IEEE Electron Device Lett. 2006, 27, 383-386
7. Goldberger, J.; Hochbaum, A. I.; Fan, R.; Yang, P. Nano Lett. 2006, 6, 973-977
8. Rustagi, S.; Singh, N.; Lim, Y.; Zhang, G.; Wang, S.; Lo, G.; Balasubramanian, N.; Kwong, D.-L. IEEE Electron Device Lett. 2007, 28, 909-912
9. Ng, R.; Wang, T.; Liu, F.; Zuo, X.; He, J.; Chan, M. IEEE Electron Device Lett. 2009, 30, 520-522
10. Trivedi, K.; Yuk, H.; Floresca, H. C.; Kim, M. J.; Hu, W. Nano Lett. 2011, 11, 1412-1417
11. Jin, S.; Fischetti, M. V.; Tang, T.-W. J. Appl. Phys. 2007, 102, 083715
12. Svizhenko, A.; Leu, P. W.; Cho, K. Phys. Rev. B 2007, 75, 125417
13. Luisier, M.; Schenk, A.; Fichtner, W. Appl. Phys. Lett. 2007, 90, 102103
14. Persson, M. P.; Lherbier, A.; Niquet, Y.-M.; Triozon, F.; Roche, S. Nano Lett. 2008, 8, 4146-4150
15. Ramayya, E. B.; Vasileska, D.; Goodnick, S. M.; Knezevic, I. J. Appl. Phys. 2008, 104, 063711
16. Buin, A. K.; Verma, A.; Svizhenko, A.; Anantram, M. P. Nano Lett. 2008, 8, 760-765
17. Luisier, M.; Klimeck, G. Phys. Rev. B 2009, 80, 155430
18. Murphy-Armando, F.; Fagas, G.; Greer, J. C. Nano Lett. 2010, 10, 869-873
19. Zhang, W.; Delerue, C.; Niquet, Y.-M.; Allan, G.; Wang, E. Phys. Rev. B 2010, 82, 115319
20. Luisier, M. Appl. Phys. Lett. 2011, 98, 032111
21. Neophytou, N.; Kosina, H. Phys. Rev. B 2011, 84, 085313
22. Niquet, Y.-M.; Delerue, C.; Rideau, D.; Videau, B. IEEE Trans. Electron Devices 2012, 59, 1480
23. ITRS Roadmap. http://www.itrs.net/Links/2011ITRS/Home2011.htm.
24. Thompson, S.; Sun, G.; Choi, Y. S.; Nishida, T. IEEE Trans. Electron Devices 2006, 53, 1010-1020
25. Baykan, M. O.; Thompson, S. E.; Nishida, T. J. Appl. Phys. 2010, 108, 093716
26. Hong, K.-H.; Kim, J.; Lee, S.-H.; Shin, J. K. Nano Lett. 2008, 8, 1335-1340
27. Shiri, D.; Kong, Y.; Buin, A.; Anantram, M. P. Appl. Phys. Lett. 2008, 93, 073114
28. Sajjad, R. N.; Alam, K. J. Appl. Phys. 2009, 105, 044307
29. Maegawa, T.; Yamauchi, T.; Hara, T.; Tsuchiya, H.; Ogawa, M. IEEE Trans. Electron Devices 2009, 56, 553-559
30. Tuma, C.; Curioni, A. Appl. Phys. Lett. 2010, 96, 193106
31. Zhang, L.; Lou, H.; He, J.; Chan, M. IEEE Trans. Electron Devices 2011, 58, 3829-3836
32. Seike, A.; Tange, T.; Sugiura, Y.; Tsuchida, I.; Ohta, H.; Watanabe, T.; Kosemura, D.; Ogura, A.; Ohdomari, I. Appl. Phys. Lett. 2007, 91, 202117
33. Moselund, K.; Najmzadeh, M.; Dobrosz, P.; Olsen, S.; Bouvet, D.; De Michielis, L.; Pott, V.; Ionescu, A. IEEE Trans. Electron Devices 2010, 57, 866-876
34. Hashemi, P.; Kim, M.; Hennessy, J.; Gomez, L.; Antoniadis, D. A.; Hoyt, J. L. Appl. Phys. Lett. 2010, 96, 063109
35. Hashemi, P.; Gomez, L.; Canonico, M.; Hoyt, J. Electron transport in Gate-All-Around uniaxial tensile strained-Si nanowire n-MOSFETs. Electron Devices Meeting. IEDM 2008, San Francisco, California, USA, IEEE Xplore, 2008; pp 1-4; DOI: 10.1109/IEDM.2008.4796835.
36. Hashemi, P.; Gomez, L.; Hoyt, J. IEEE Electron Device Lett. 2009, 30, 401-403
37. Niquet, Y. M.; Rideau, D.; Tavernier, C.; Jaouen, H.; Blase, X. Phys. Rev. B 2009, 79, 245201
38. Vanderbilt, D.; Taole, S. H.; Narasimhan, S. Phys. Rev. B 1989, 40, 5657-5668
39. Sanders, G. D.; Stanton, C. J.; Chang, Y. C. Phys. Rev. B 1993, 48, 11067-11076
40. Kotlyar, R.; Obradovic, B.; Matagne, P.; Stettler, M.; Giles, M. D. Appl. Phys. Lett. 2004, 84, 5270-5272
41. Ungersboeck, E.; Dhar, S.; Karlowatz, G.; Sverdlov, V.; Kosina, H.; Selberherr, S. IEEE Trans. Electron Devices 2007, 54, 2183-2190
42. Sverdlov, V.; Karlowatz, G.; Dhar, S.; Kosina, H.; Selberherr, S. Solid-State Electron. 2008, 52, 1563-1568
43. Stanojevic, Z.; Baumgartner, O.; Sverdlov, V.; Kosina, H. Electronic band structure modeling in strained Si-nanowires: Two band k.p versus tight binding. 2010 14th International Workshop on Computational Electronics (IWCE), Pisa, Italy, IEEE Xplore, 2010; pp 1-4; DOI: 10.1109/IWCE.2010.5677927.
44. Niquet, Y.-M.; Lherbier, A.; Persson, M.; Triozon, F.; Roche, S.; Blase, X.; Rideau, D. Atomistic Tight-Binding Approaches to Quantum Transport. 13th International Workshop on Computational Electronics, 2009. IWCE, Beijing, China, IEEE Xplore, 2009; pp 1-4; DOI: 10.1109/IWCE.2009.5091086.
45. Morioka, N.; Yoshioka, H.; Suda, J.; Kimoto, T. J. Appl. Phys. 2011, 109, 064318
46. Krzeminski, C.; Han, X.-L.; Larrieu, G. arXiv 2012, 10.1063/1.4729410
47. Rafferty, C. S.; Dutton, R. W. Appl. Phys. Lett. 1989, 54, 1815
48. Stan, G.; Krylyuk, S.; Davydov, A. V.; Cook, R. F. Nano Lett. 2010, 10, 2031-2037
49. Oh, E.-S.; Walton, J.; Lagoudas, D.; Slattery, J. Acta Mech. 2006, 181, 231-255