Electron transport in gate-all-around uniaxial tensile strained-si nanowire n-MOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Hashemi, Pouya ^a,b   Gomez, Leonardo ^a   Canonico, Michael ^b   Hoyt, Judy L ^a  

^a USA   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DRIVES; EFFECTIVE MOBILITIES; ELECTRON TRANSPORTS; GATE-ALL-AROUND; HIGH STRESS; INTRINSIC PERFORMANCE; MOBILITY ENHANCEMENTS; MOSFETS; N-MOSFETS; STRAINED-SI; SUB-THRESHOLD SWINGS; TRANSCONDUCTANCE ENHANCEMENTS;

ELECTRON DEVICES; ELECTRONS; GALLIUM ALLOYS; GATES (TRANSISTOR); NANOWIRES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SPURIOUS SIGNAL NOISE;

MOSFET DEVICES;

EID: 64549145359     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796835     Document Type: Conference Paper

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