Onsite matrix elements of the tight-binding Hamiltonian of a strained crystal: Application to silicon, germanium, and their alloys

Physical Review B - Condensed Matter and Materials Physics

Volumn 79, Issue 24, 2009, Pages

  Niquet, Y M ^a   Rideau, D ^b   Tavernier, C ^b   Jaouen, H ^b   Blase, X ^c  

^a CEA GRENOBLE   (France)

^b STMICROELECTRONICS   (France)

^c LABORATOIRE DE CRISTALLOGRAPHIE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 67650085428     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.245201     Document Type: Article

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