SCOPUS 정보 검색 플랫폼

Physical Review B - Condensed Matter and Materials Physics

Volumn 82, Issue 11, 2010, Pages

Atomistic modeling of electron-phonon coupling and transport properties in n -type [110] silicon nanowires

(5) Zhang, Wenxing a,b Delerue, Christophe a Niquet, Yann Michel c Allan, Guy a Wang, Enge d

a INSTITUT D ELECTRONIQUE (France)

b INSTITUTE OF PHYSICS (China)

c UNIV GRENOBLE ALPES (France)

d PEKING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77957567360 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.82.115319 Document Type: Article

Times cited : (79)

References (32)

1
- 85144420316
- edited by V. Kumar (Elsevier Science, Oxford
- Nanosilicon, edited by, V. Kumar, (Elsevier Science, Oxford, 2007).
- (2007) Nanosilicon

2
- 0037459371
- 10.1126/science.1080313
- D. D. D. Ma, C. S. Lee, F. C. K. Au, S. Y. Tong, and S. T. Lee, Science 299, 1874 (2003). 10.1126/science.1080313
- (2003) Science , vol.299 , pp. 1874
- Ma, D.D.D.¹ Lee, C.S.² Au, F.C.K.³ Tong, S.Y.⁴ Lee, S.T.⁵

3
- 1642528452
- 10.1021/nl035162i
- Y. Wu, Y. Cui, L. Huynh, C. J. Barrelet, D. C. Bell, and C. M. Lieber, Nano Lett. 4, 433 (2004). 10.1021/nl035162i
- (2004) Nano Lett. , vol.4 , pp. 433
- Wu, Y.¹ Cui, Y.² Huynh, L.³ Barrelet, C.J.⁴ Bell, D.C.⁵ Lieber, C.M.⁶

4
- 33744822492
- 10.1021/nl060166j
- J. Goldberger, A. I. Hochbaum, R. Fan, and P. D. Yang, Nano Lett. 6, 973 (2006). 10.1021/nl060166j
- (2006) Nano Lett. , vol.6 , pp. 973
- Goldberger, J.¹ Hochbaum, A.I.² Fan, R.³ Yang, P.D.⁴

5
- 0038161696
- 10.1021/nl025875l
- Y. Cui, Z. H. Zhong, D. L. Wang, W. U. Wang, and C. M. Lieber, Nano Lett. 3, 149 (2003). 10.1021/nl025875l
- (2003) Nano Lett. , vol.3 , pp. 149
- Cui, Y.¹ Zhong, Z.H.² Wang, D.L.³ Wang, W.U.⁴ Lieber, C.M.⁵

6
- 40749151146
- 10.1109/LED.2007.915374
- C. Thelander, L. E. Fröberg, C. Rehnstedt, L. Samuelson, and L.-E. Wemersson, IEEE Electron Device Lett. 29, 206 (2008). 10.1109/LED.2007.915374
- (2008) IEEE Electron Device Lett. , vol.29 , pp. 206
- Thelander, C.¹ Fröberg, L.E.² Rehnstedt, C.³ Samuelson, L.⁴ Wemersson, L.-E.⁵

7
- 40849134313
- C. Dupré, T. Ernst, V. Maffim-Alvaro, V. Delaye, J. M. Hartmann, S. Borel, C. Vizoz, O. Faynot, G. Ghibaudo, and S. Deleonibus, Solid-State Electron. 52, 519 (2008).
- (2008) Solid-State Electron. , vol.52 , pp. 519
- Dupré, C.¹ Ernst, T.² Maffim-Alvaro, V.³ Delaye, V.⁴ Hartmann, J.M.⁵ Borel, S.⁶ Vizoz, C.⁷ Faynot, O.⁸ Ghibaudo, G.⁹ Deleonibus, S.¹⁰

8
- 32044458180
- 10.1002/smll.200500181
- V. Schmidt, H. Riel, S. Senz, S. Karg, W. Riess, and U. Gösele, Small 2, 85 (2006). 10.1002/smll.200500181
- (2006) Small , vol.2 , pp. 85
- Schmidt, V.¹ Riel, H.² Senz, S.³ Karg, S.⁴ Riess, W.⁵ Gösele, U.⁶

9
- 34047259517
- 10.1063/1.2720640
- M. T. Björk, O. Hayden, H. Schmid, H. Riel, and W. Riess, Appl. Phys. Lett. 90, 142110 (2007). 10.1063/1.2720640
- (2007) Appl. Phys. Lett. , vol.90 , pp. 142110
- Björk, M.T.¹ Hayden, O.² Schmid, H.³ Riel, H.⁴ Riess, W.⁵

10
- 84892098387
- Springer, New York
- M. Lundstrom and J. Guo, Nanoscale Transistors: Device Physics, Modeling and Simulation (Springer, New York, 2006).
- (2006) Nanoscale Transistors: Device Physics, Modeling and Simulation
- Lundstrom, M.¹ Guo, J.²

11
- 0035902938
- 10.1126/science.1062711
- Y. Cui, Q. Q. Wei, H. K. Park, and C. M. Lieber, Science 293, 1289 (2001). 10.1126/science.1062711
- (2001) Science , vol.293 , pp. 1289
- Cui, Y.¹ Wei, Q.Q.² Park, H.K.³ Lieber, C.M.⁴

12
- 38049143961
- 10.1038/nature06381
- A. I. Hochbaum, R. Chen, R. D. Delgado, W. Liang, E. C. Garnett, M. Najarian, A. Majumdar, and P. Yang, Nature (London) 451, 163 (2008). 10.1038/nature06381
- (2008) Nature (London) , vol.451 , pp. 163
- Hochbaum, A.I.¹ Chen, R.² Delgado, R.D.³ Liang, W.⁴ Garnett, E.C.⁵ Najarian, M.⁶ Majumdar, A.⁷ Yang, P.⁸

13
- 68849088387
- 10.1103/PhysRevLett.103.055502
- T. Markussen, A.-P. Jauho, and M. Brandbyge, Phys. Rev. Lett. 103, 055502 (2009). 10.1103/PhysRevLett.103.055502
- (2009) Phys. Rev. Lett. , vol.103 , pp. 055502
- Markussen, T.¹ Jauho, A.-P.² Brandbyge, M.³

14
- 0000315515
- 10.1103/PhysRevB.48.11067
- G. D. Sanders, C. J. Stanton, and Y. C. Chang, Phys. Rev. B 48, 11067 (1993). 10.1103/PhysRevB.48.11067
- (1993) Phys. Rev. B , vol.48 , pp. 11067
- Sanders, G.D.¹ Stanton, C.J.² Chang, Y.C.³

15
- 0012594347
- 10.1088/0022-3719/17/14/010
- J. Lee and M. O. Vassell, J. Phys. C 17, 2525 (1984). 10.1088/0022-3719/17/14/010
- (1984) J. Phys. C , vol.17 , pp. 2525
- Lee, J.¹ Vassell, M.O.²

16
- 3142715886
- 10.1063/1.1762695
- R. Kotlyar, B. Obradovic, P. Matagne, M. Stettler, and M. D. Giles, Appl. Phys. Lett. 84, 5270 (2004). 10.1063/1.1762695
- (2004) Appl. Phys. Lett. , vol.84 , pp. 5270
- Kotlyar, R.¹ Obradovic, B.² Matagne, P.³ Stettler, M.⁴ Giles, M.D.⁵

17
- 33846582845
- 10.1109/TNANO.2006.888521
- E. B. Ramayya, D. Vasileska, S. M. Goodnick, and I. Knezevic, IEEE Trans. Nanotechnol. 6, 113 (2007). 10.1109/TNANO.2006.888521
- (2007) IEEE Trans. Nanotechnol. , vol.6 , pp. 113
- Ramayya, E.B.¹ Vasileska, D.² Goodnick, S.M.³ Knezevic, I.⁴

18
- 54749158158
- 10.1063/1.2977758
- E. B. Ramayya, D. Vasileska, S. M. Goodnick, and I. Knezevic, J. Appl. Phys. 104, 063711 (2008). 10.1063/1.2977758
- (2008) J. Appl. Phys. , vol.104 , pp. 063711
- Ramayya, E.B.¹ Vasileska, D.² Goodnick, S.M.³ Knezevic, I.⁴

19
- 33846134083
- 10.1021/nl061554o
- V. A. Fonoberov and A. A. Balandin, Nano Lett. 6, 2442 (2006). 10.1021/nl061554o
- (2006) Nano Lett. , vol.6 , pp. 2442
- Fonoberov, V.A.¹ Balandin, A.A.²

20
- 40449141378
- 10.1021/nl0727314
- A. K. Buin, A. Verma, A. Svizhenko, and M. P. Anantram, Nano Lett. 8, 760 (2008a). 10.1021/nl0727314
- (2008) Nano Lett. , vol.8 , pp. 760
- Buin, A.K.¹ Verma, A.² Svizhenko, A.³ Anantram, M.P.⁴

21
- 61649126007
- 10.1021/nl801128f
- M. P. Persson, A. Lherbier, Y.-M. Niquet, F. Triozon, and S. Roche, Nano Lett. 8, 4146 (2008). 10.1021/nl801128f
- (2008) Nano Lett. , vol.8 , pp. 4146
- Persson, M.P.¹ Lherbier, A.² Niquet, Y.-M.³ Triozon, F.⁴ Roche, S.⁵

22
- 72449156756
- 10.1103/PhysRevB.80.155430
- M. Luisier and G. Klimeck, Phys. Rev. B 80, 155430 (2009). 10.1103/PhysRevB.80.155430
- (2009) Phys. Rev. B , vol.80 , pp. 155430
- Luisier, M.¹ Klimeck, G.²

23
- 77949433953
- 10.1021/nl9034384
- F. Murphy-Armando, G. Fagas, and J. C. Greer, Nano Lett. 10, 869 (2010). 10.1021/nl9034384
- (2010) Nano Lett. , vol.10 , pp. 869
- Murphy-Armando, F.¹ Fagas, G.² Greer, J.C.³

24
- 51849105118
- 10.1063/1.2974088
- A. K. Buin, A. Verma, and M. P. Anantrarn, J. Appl. Phys. 104, 053716 (2008b). 10.1063/1.2974088
- (2008) J. Appl. Phys. , vol.104 , pp. 053716
- Buin, A.K.¹ Verma, A.² Anantrarn, M.P.³

25
- 48449097261
- 10.1021/nl072646w
- O. Gunawan, L. Sekaric, A. Majumdar, M. Rooks, J. Appenzeller, J. W. Sleight, S. Guha, and W. Haensch, Nano Lett. 8, 1566 (2008). 10.1021/nl072646w
- (2008) Nano Lett. , vol.8 , pp. 1566
- Gunawan, O.¹ Sekaric, L.² Majumdar, A.³ Rooks, M.⁴ Appenzeller, J.⁵ Sleight, J.W.⁶ Guha, S.⁷ Haensch, W.⁸

26
- 84903559990
- 10.1143/JJAP.19.L735
- H. Sakaki, Jpn. J. Appl. Phys., Part 2 19, L735 (1980). 10.1143/JJAP.19.L735
- (1980) Jpn. J. Appl. Phys., Part 2 , vol.19 , pp. 735
- Sakaki, H.¹

27
- 1642364746
- 10.1103/PhysRevB.69.075213
- T. Thonhauser and G. D. Mahan, Phys. Rev. B 69, 075213 (2004). 10.1103/PhysRevB.69.075213
- (2004) Phys. Rev. B , vol.69 , pp. 075213
- Thonhauser, T.¹ Mahan, G.D.²

28
- 33645940928
- 10.1103/PhysRevB.73.165319
- Y.-M. Niquet, A. Lherbier, N. H. Quang, M. V. Fernández-Serra, X. Blase, and C. Delerue, Phys. Rev. B 73, 165319 (2006). 10.1103/PhysRevB.73. 165319
- (2006) Phys. Rev. B , vol.73 , pp. 165319
- Niquet, Y.-M.¹ Lherbier, A.² Quang, N.H.³ Fernández-Serra, M.V.⁴ Blase, X.⁵ Delerue, C.⁶

29
- 67650085428
- 10.1103/PhysRevB.79.245201
- Y.-M. Niquet, D. Rideau, C. Tavernier, H. Jaouen, and X. Blase, Phys. Rev. B 79, 245201 (2009). 10.1103/PhysRevB.79.245201
- (2009) Phys. Rev. B , vol.79 , pp. 245201
- Niquet, Y.-M.¹ Rideau, D.² Tavernier, C.³ Jaouen, H.⁴ Blase, X.⁵

30
- 0001433844
- 10.1103/PhysRevB.40.5657
- D. Vanderbilt, S. H. Taole, and S. Narasimhan, Phys. Rev. B, 40, 5657 (1989). 10.1103/PhysRevB.40.5657
- (1989) Phys. Rev. B , vol.40 , pp. 5657
- Vanderbilt, D.¹ Taole, S.H.² Narasimhan, S.³

31
- 61649094570
- 10.1021/nl802613p
- H. Peelaers, B. Partoens, and F. M. Peeters, Nano Lett. 9, 107 (2009). 10.1021/nl802613p
- (2009) Nano Lett. , vol.9 , pp. 107
- Peelaers, H.¹ Partoens, B.² Peeters, F.M.³

32
- 77957559377
- 10.1103/PhysRevB.82.115318
- M. P. Persson, H. Mera, Y.-M. Niquet, C. Delerue, and M. Diarra, Phys. Rev. B 82, 115318 (2010). 10.1103/PhysRevB.82.115318
- (2010) Phys. Rev. B , vol.82 , pp. 115318
- Persson, M.P.¹ Mera, H.² Niquet, Y.-M.³ Delerue, C.⁴ Diarra, M.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.