Strain-dependent characteristics of triangular silicon nanowire-based field-effect transistors on flexible plastics

Japanese Journal of Applied Physics

Volumn 50, Issue 6 PART 1, 2011, Pages

  Koo, Jamin ^a   Jeon, Youngin ^a   Lee, Myeongwon ^a   Kim, Sangsig ^a  

^a Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BULK WAFERS; DEVICE PERFORMANCE; FIELD-EFFECT MOBILITIES; FLEXIBLE PLASTIC SUBSTRATES; FLEXIBLE PLASTICS; FLEXIBLE SUBSTRATE; MANUFACTURING TECHNOLOGIES; PEAK TRANSCONDUCTANCE; SILICON NANOWIRES; STRAIN EFFECT; STRAIN-DEPENDENT; TOP-GATE;

FLEXIBLE MANUFACTURING SYSTEMS; MESFET DEVICES; NANOWIRES; SILICON WAFERS; SUBSTRATES; TRANSISTORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79959467193     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.065001     Document Type: Article

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