The high-mobility bended n-channel silicon nanowire transistor

IEEE Transactions on Electron Devices

Volumn 57, Issue 4, 2010, Pages 866-876

  Moselund, Kirsten Emilie ^a   Najmzadeh, Mohammad ^b   Dobrosz, Peter ^c   Olsen, Sarah H ^c   Bouvet, Didier ^b   De Michielis, Luca ^b   Pott, Vincent ^d   Ionescu, Adrian M ^b  

^a IBM RESEARCH ZURICH   (Switzerland)

^b EPFL   (Switzerland)

^c NEWCASTLE UNIVERSITY   (United Kingdom)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Micro Raman spectroscopy; Mobility; Multiple gate MOSFET; Silicon nanowire; Strained Si

Indexed keywords

DEVICE CHARACTERISTICS; DEVICE GATE; DEVICE PERFORMANCE; ELECTRICAL FIELD; GATE BIAS; GATE STACKS; GATE-ALL-AROUND; HIGH MOBILITY; LOW FIELD MOBILITY; LOW TEMPERATURES; MICRO RAMAN SPECTROSCOPY; MULTIPLE-GATE MOSFET; N-CHANNEL; NMOSFETS; POLYSILICON GATES; ROOM TEMPERATURE; SILICON NANOWIRE TRANSISTORS; SILICON NANOWIRES; STRAIN PROFILES; STRAINED-SI; TRANSISTOR OPERATION;

DRAIN CURRENT; ELECTRIC WIRE; ELECTRON MOBILITY; LOGIC GATES; MOSFET DEVICES; NANOWIRES; POLYSILICON; RAMAN SCATTERING; RAMAN SPECTROSCOPY; STRAIN;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77950297191     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2040939     Document Type: Article

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