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Volumn 96, Issue 6, 2010, Pages

Width-dependent hole mobility in top-down fabricated Si-core/Ge-shell nanowire metal-oxide-semiconductor-field-effect-transistors

(6) Hashemi, Pouya a Kim, Meekyung a Hennessy, John a Gomez, Leonardo a Antoniadis, Dimitri A a Hoyt, Judy L a

a Massachusetts Institute of Technology Cambridge (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CORE SIZE; FINITE ELEMENT SIMULATIONS; GATE STACKS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOBILITY ENHANCEMENT; SELECTIVE EPITAXIAL GROWTH; STRESS PROFILE; TOPDOWN; TRANSVERSE STRESS;

DIELECTRIC DEVICES; EPITAXIAL FILMS; FIELD EFFECT TRANSISTORS; GERMANIUM; HOLE MOBILITY; NANOWIRES; OXIDE FILMS; SEMICONDUCTOR GROWTH; STRESS ANALYSIS;

SEMICONDUCTING SILICON;

EID: 76749167161 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3318249 Document Type: Article

Times cited : (14)

References (24)

1
- 40149094653
- 0163-1918.
- S. -D. Suk, S. -Y. Lee, S. -M. Kim, E. -J. Yoon, M. -S. Kim, M. Li, C. W. Oh, K. H. Yeo, S. H. Kim, D. -S. Shin, K. -H. Lee, H. S. Park, J. N. Han, C. J. Park, J. -B. Park, D. -W. Kim, D. Park, and B. -I. Ryu, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2005, 735.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2005 , pp. 735
- Suk, S.-D.¹ Lee, S.-Y.² Kim, S.-M.³ Yoon, E.-J.⁴ Kim, M.-S.⁵ Li, M.⁶ Oh, C.W.⁷ Yeo, K.H.⁸ Kim, S.H.⁹ Shin, D.-S.¹⁰ Lee, K.-H.¹¹ Park, H.S.¹² Han, J.N.¹³ Park, C.J.¹⁴ Park, J.-B.¹⁵ Kim, D.-W.¹⁶ Park, D.¹⁷ Ryu, B.-I.¹⁸

2
- 76749127510
- 0163-1918.
- N. Singh, F. Y. Lim, W. W. Fang, S. C. Rustagi, L. K. Bera, A. Agarwal, C. H. Tung, K. M. Hoe, S. R. Omampuliyur, D. Tripathi, A. O. Adeyeye, G. Q. Lo, N. Balasubramanian, and D. L. Kwong, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2008, 548.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2008 , pp. 548
- Singh, N.¹ Lim, F.Y.² Fang, W.W.³ Rustagi, S.C.⁴ Bera, L.K.⁵ Agarwal, A.⁶ Tung, C.H.⁷ Hoe, K.M.⁸ Omampuliyur, S.R.⁹ Tripathi, D.¹⁰ Adeyeye, A.O.¹¹ Lo, G.Q.¹² Balasubramanian, N.¹³ Kwong, D.L.¹⁴

3
- 76749150940
- 0163-1918.
- P. Hashemi, L. Gomez, M. Canonico, and J. L. Hoyt, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2008, 865.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2008 , pp. 865
- Hashemi, P.¹ Gomez, L.² Canonico, M.³ Hoyt, J.L.⁴

4
- 43549097444
- 0018-9383,. 10.1109/TED.2008.2003228
- C. N. Chleirigh, N. D. Theodore, H. Fukuyama, S. Mure, H. -U. Ehrke, A. Domenicucci, and J. L. Hoyt, IEEE Trans. Electron Devices 0018-9383 55, 2687 (2008). 10.1109/TED.2008.2003228
- (2008) IEEE Trans. Electron Devices , vol.55 , pp. 2687
- Chleirigh, C.N.¹ Theodore, N.D.² Fukuyama, H.³ Mure, S.⁴ Ehrke, H.-U.⁵ Domenicucci, A.⁶ Hoyt, J.L.⁷

5
- 67349203553
- 0018-9383,. 10.1109/TED.2009.2014198
- D. Kuzum, A. J. Pethe, T. Krishnamohan, and K. C. Saraswat, IEEE Trans. Electron Devices 0018-9383 56, 648 (2009). 10.1109/TED.2009.2014198
- (2009) IEEE Trans. Electron Devices , vol.56 , pp. 648
- Kuzum, D.¹ Pethe, A.J.² Krishnamohan, T.³ Saraswat, K.C.⁴

6
- 0037038368
- Epitaxial core-shell and core-multishell nanowire heterostructures
- DOI 10.1038/nature01141
- L. J. Lauhon, M. S. Gudiksen, D. Wang, and C. M. Lieber, Nature (London) 0028-0836 420, 57 (2002). 10.1038/nature01141 (Pubitemid 35291437)
- (2002) Nature , vol.420 , Issue.6911 , pp. 57-61
- Lauhon, L.J.¹ Gudlksen, M.S.² Wang, D.³ Lieber, C.M.⁴

7
- 43149099461
- 1530-6984,. 10.1021/nl073407b
- Y. Hu, J. Xiang, G. Liang, H. Yan, and C. M. Lieber, Nano Lett. 1530-6984 8, 925 (2008). 10.1021/nl073407b
- (2008) Nano Lett. , vol.8 , pp. 925
- Hu, Y.¹ Xiang, J.² Liang, G.³ Yan, H.⁴ Lieber, C.M.⁵

8
- 13744262979
- Critical thickness enhancement of epitaxial SiGe films grown on small structures
- DOI 10.1063/1.1854204, 043519
- Y. Liang, W. D. Nix, P. B. Griffin, and J. D. Plummer, J. Appl. Phys. 0021-8979 97, 043519 (2005). 10.1063/1.1854204 (Pubitemid 40238273)
- (2005) Journal of Applied Physics , vol.97 , Issue.4 , pp. 0435191-0435197
- Liang, Y.¹ Nix, W.D.² Griffin, P.B.³ Plummer, J.D.⁴

9
- 0032620707
- 0021-8979,. 10.1063/1.370153
- D. Zubia and S. D. Hersee, J. Appl. Phys. 0021-8979 85, 6492 (1999). 10.1063/1.370153
- (1999) J. Appl. Phys. , vol.85 , pp. 6492
- Zubia, D.¹ Hersee, S.D.²

10
- 31144435817
- x on nano-scale patterned Si structures
- DOI 10.1116/1.1978898
- G. Vanamu, A. K. Datye, and S. H. Zaidi, J. Vac. Sci. Technol. B 1071-1023 23, 1622 (2005). 10.1116/1.1978898 (Pubitemid 43127255)
- (2005) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.23 , Issue.4 , pp. 1622-1629
- Vanamu, G.¹ Datye, A.K.² Zaidi, S.H.³

11
- 21644438888
- Stranski-Krastanow growth of germanium on silicon nanowires
- DOI 10.1021/nl050605z
- L. Pan, K. -K. Leu, J. M. Redwing, and E. C. Dickey, Nano Lett. 1530-6984 5, 1081 (2005). 10.1021/nl050605z (Pubitemid 40925421)
- (2005) Nano Letters , vol.5 , Issue.6 , pp. 1081-1085
- Pan, L.¹ Lew, K.-K.² Redwing, J.M.³ Dickey, E.C.⁴

12
- 68249143293
- 0741-3106,. 10.1109/LED.2009.2024178
- J. -W. Han, D. -I. Moon, and Y. -K. Choi, IEEE Electron Device Lett. 0741-3106 30, 864 (2009). 10.1109/LED.2009.2024178
- (2009) IEEE Electron Device Lett. , vol.30 , pp. 864
- Han, J.-W.¹ Moon, D.-I.² Choi, Y.-K.³

13
- 34547807638
- 3/AlN gate stacks
- DOI 10.1109/LED.2007.901272
- A. Ritenour, J. Hennessy, and D. A. Antoniadis, IEEE Electron Device Lett. 0741-3106 28, 746 (2007). 10.1109/LED.2007.901272 (Pubitemid 47242039)
- (2007) IEEE Electron Device Letters , vol.28 , Issue.8 , pp. 746-749
- Ritenour, A.¹ Hennessy, J.² Antoniadis, D.A.³

14
- 61349154482
- 0163-1918.
- T. Tezuka, E. Toyota, S. Nakaharai, S. Irisawa, H. Hirashita, Y. Moriyam, N. Taoka, Y. Yamashita, O. Kiso, M. Harada, T. Yamamoto, and S. Takagi, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2007, 887.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2007 , pp. 887
- Tezuka, T.¹ Toyota, E.² Nakaharai, S.³ Irisawa, S.⁴ Hirashita, H.⁵ Moriyam, Y.⁶ Taoka, N.⁷ Yamashita, Y.⁸ Kiso, O.⁹ Harada, M.¹⁰ Yamamoto, T.¹¹ Takagi, S.¹²

15
- 59849089319
- 0361-5235,. 10.1007/s11664-008-0621-2
- S. Balakumar, K. D. Buddharaju, B. Tan, S. C. Rustagi, N. Singh, R. Kumar, G. Q. Lo, S. Tripathy, and D. L. Kwong, J. Electron. Mater. 0361-5235 38, 443 (2009). 10.1007/s11664-008-0621-2
- (2009) J. Electron. Mater. , vol.38 , pp. 443
- Balakumar, S.¹ Buddharaju, K.D.² Tan, B.³ Rustagi, S.C.⁴ Singh, N.⁵ Kumar, R.⁶ Lo, G.Q.⁷ Tripathy, S.⁸ Kwong, D.L.⁹

16
- 76749093122
- 0163-1918.
- K. Tachi, M. Casse, D. Jang, C. Dupŕ, A. Hubert, N. Vulliet, V. Maffini-Alvaro, C. Vizioz, C. Carabasse, V. Delaye, J. M. Hartmann, G. Ghibaudo, H. Iwai, S. Cristoloveanu, O. Faynot, and T. Ernst, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2009, 313.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2009 , pp. 313
- Tachi, K.¹ Casse, M.² Jang, D.³ Dupŕ, C.⁴ Hubert, A.⁵ Vulliet, N.⁶ Maffini-Alvaro, V.⁷ Vizioz, C.⁸ Carabasse, C.⁹ Delaye, V.¹⁰ Hartmann, J.M.¹¹ Ghibaudo, G.¹² Iwai, H.¹³ Cristoloveanu, S.¹⁴ Faynot, O.¹⁵ Ernst, T.¹⁶

17
- 76749156673
- 0163-1918.
- C. E. Smith, H. Adhikari, S-H. Lee, B. Coss, S. Parthasarathy, C. Young, B. Sassman, M. Cruz, C. Hobbs, P. Majhi, P. D. Kirsch and R. Jammy, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2009, 309.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2009 , pp. 309
- Smith, C.E.¹ Adhikari, H.² Lee, S.-H.³ Coss, B.⁴ Parthasarathy, S.⁵ Young, C.⁶ Sassman, B.⁷ Cruz, M.⁸ Hobbs, C.⁹ Majhi, P.¹⁰ Kirsch, P.D.¹¹ Jammy, R.¹²

18
- 76749168027
- 0018-9383,. 10.1109/TED.2009.2030839
- A. Pouydebasque, K. Romanjek, C. Le Royer, C. Tabone, B. Previtali, F. Allain, E. Augendre, J. -M. Hartmann, H. Grampeix, and M. Vinet, IEEE Trans. Electron Devices 0018-9383 56, 3240 (2009). 10.1109/TED.2009.2030839
- (2009) IEEE Trans. Electron Devices , vol.56 , pp. 3240
- Pouydebasque, A.¹ Romanjek, K.² Le Royer, C.³ Tabone, C.⁴ Previtali, B.⁵ Allain, F.⁶ Augendre, E.⁷ Hartmann, J.-M.⁸ Grampeix, H.⁹ Vinet, M.¹⁰

19
- 67349083323
- 0163-1918.
- T. Krishnamohan, D. Kim, T. V. Dinh, A. -T. Pham, B. Meinerzhagen, C. Jungemann, and K. Saraswat, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2008, 899.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2008 , pp. 899
- Krishnamohan, T.¹ Kim, D.² Dinh, T.V.³ Pham, A.-T.⁴ Meinerzhagen, B.⁵ Jungemann, C.⁶ Saraswat, K.⁷

20
- 70350705635
- 0021-8979,. 10.1063/1.3245327
- Y. Zhang, M. V. Fischetti, B. Soŕe, W. Magnus, M. Heyns, and M. Meuris, J. Appl. Phys. 0021-8979 106, 083704 (2009). 10.1063/1.3245327
- (2009) J. Appl. Phys. , vol.106 , pp. 083704
- Zhang, Y.¹ Fischetti, M.V.² Soŕe, B.³ Magnus, W.⁴ Heyns, M.⁵ Meuris, M.⁶

21
- 34548269650
- Asymmetric strain in nanoscale patterned strained-Si/strained-Ge/ strained- Si heterostructures on insulator
- DOI 10.1063/1.2772775
- P. Hashemi, L. Gomez, J. L. Hoyt, M. D. Robertson, and M. Canonico, Appl. Phys. Lett. 0003-6951 91, 083109 (2007). 10.1063/1.2772775 (Pubitemid 47318990)
- (2007) Applied Physics Letters , vol.91 , Issue.8 , pp. 083109
- Hashemi, P.¹ Gomez, L.² Hoyt, J.L.³ Robertson, M.D.⁴ Canonico, M.⁵

22
- 33847712554
- 0163-1918.
- T. Irisawa, T. Numata, T. Tezuka, K. Usuda, S. Nakaharai, N. Hirashita, N. Sugiyama, E. Toyoda, and S. Takagi, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2005, 709.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2005 , pp. 709
- Irisawa, T.¹ Numata, T.² Tezuka, T.³ Usuda, K.⁴ Nakaharai, S.⁵ Hirashita, N.⁶ Sugiyama, N.⁷ Toyoda, E.⁸ Takagi, S.⁹

23
- 33846693940
- 0096-8250,. 10.1103/PhysRev.94.42
- C. S. Smith, Phys. Rev. 0096-8250 94, 42 (1954). 10.1103/PhysRev.94.42
- (1954) Phys. Rev. , vol.94 , pp. 42
- Smith, C.S.¹

24
- 50249165347
- 0163-1918.
- O. Weber, T. Irisawa, T. Numata, M. Harada, N. Taoka, Y. Yamashita, T. Yamamoto, N. Sugiyama, M. Takenaka, and S. Takagi, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2007, 719.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2007 , pp. 719
- Weber, O.¹ Irisawa, T.² Numata, T.³ Harada, M.⁴ Taoka, N.⁵ Yamashita, Y.⁶ Yamamoto, T.⁷ Sugiyama, N.⁸ Takenaka, M.⁹ Takagi, S.¹⁰

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.