Electronic band structure modeling in strained Si-nanowires: Two band k·p versus tight binding

2010 14th International Workshop on Computational Electronics, IWCE 2010

Volumn , Issue , 2010, Pages 5-8

  Stanojevic Z ^a   Baumgartner, O ^a   Sverdlov, V ^a   Kosina, H ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SILICON; EFFECTIVE MASS APPROXIMATION; ELECTRONIC BAND STRUCTURE; FIRST-PRINCIPLES CALCULATION; SEMI-EMPIRICAL; SILICON NANOWIRES; STRAIN EFFECT; STRAINED-SI; SUBBAND STRUCTURES; TIGHT BINDING; TIGHT BINDING METHODS;

ELECTRON MOBILITY; ELECTRONICS ENGINEERING; IONIC CONDUCTION;

NANOWIRES;

EID: 78751693298     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWCE.2010.5677927     Document Type: Conference Paper

References (7)

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