Uniaxial strain effects on electron ballistic transport in gate-all-around silicon nanowire mosfets

IEEE Transactions on Electron Devices

Volumn 58, Issue 11, 2011, Pages 3829-3836

  Zhang, Lining ^a   Lou, Haijun ^b   He, Jin ^b,c   Chan, Mansun ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b PEKING UNIVERSITY   (China)

^c PKU HKUST Shenzhen HongKong Institution   (China)

Author keywords

Ballistic transport; band structure; orientation effect; silicon nanowire; strain effect; uniaxial strain

Indexed keywords

BALLISTIC TRANSPORTS; ORIENTATION EFFECT; SILICON NANOWIRE; STRAIN EFFECT; UNI-AXIAL STRAINS;

BALLISTICS; BAND STRUCTURE; ELECTRONS; MOSFET DEVICES; NANOWIRES; TRANSPORT PROPERTIES;

STRAIN;

EID: 80054929620     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2165215     Document Type: Article

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