-
2
-
-
27344444688
-
In-situ infrared spectroscopy and density functional theory modeling of hafnium alkylamine adsorption on Si-OH and Si-H surfaces
-
DOI 10.1021/cm051064h
-
Kelly M, Han J, Musgrave C and Parsons G 2005 Chem. Mater. 17 5305 (Pubitemid 41527965)
-
(2005)
Chemistry of Materials
, vol.17
, Issue.21
, pp. 5305-5314
-
-
Kelly, M.J.1
Han, J.H.2
Musgrave, C.B.3
Parsons, G.N.4
-
4
-
-
35348905511
-
-
10.1063/1.2799355 0094-243X
-
Maslar J E, Hurst W S, Burgess D R, Kimes W A, Nguyen N V and Moore E F 2007 AIP Conf. Proc. 931 121
-
(2007)
AIP Conf. Proc.
, vol.931
, pp. 121
-
-
Maslar, J.E.1
Hurst, W.S.2
Burgess, D.R.3
Kimes, W.A.4
Nguyen, N.V.5
Moore, E.F.6
-
7
-
-
56849122383
-
-
10.1063/1.3054348 0003-6951 252905
-
Milojevic M, Hinkle C L, Aguirre-Tostado F S, Kim H C, Vogel E M, Kim J and Wallace R M 2008 Appl. Phys. Lett. 93 252905
-
(2008)
Appl. Phys. Lett.
, vol.93
, Issue.25
-
-
Milojevic, M.1
Hinkle, C.L.2
Aguirre-Tostado, F.S.3
Kim, H.C.4
Vogel, E.M.5
Kim, J.6
Wallace, R.M.7
-
8
-
-
77956397995
-
-
10.1021/cm903793u 0897-4756
-
Park S K, Kanjolia R, Anthis J, Odedra R, Boag N, Wielunski L and Chabal Y J 2010 Chem. Mater. 22 4867
-
(2010)
Chem. Mater.
, vol.22
, Issue.17
, pp. 4867
-
-
Park, S.K.1
Kanjolia, R.2
Anthis, J.3
Odedra, R.4
Boag, N.5
Wielunski, L.6
Chabal, Y.J.7
-
10
-
-
77957951107
-
-
10.1021/am900807a 1944-8244
-
Rose M, Niinistö J, Endler I, Bartha J W, Kücher P and Ritala M 2010 ACS Appl. Mater. Interfaces 2 347
-
(2010)
ACS Appl. Mater. Interfaces
, vol.2
, Issue.2
, pp. 347
-
-
Rose, M.1
Niinistö, J.2
Endler, I.3
Bartha, J.W.4
Kücher, P.5
Ritala, M.6
-
11
-
-
63649098537
-
-
0022-3727 073001
-
Langereis E, Heil S, Knoops H, Keuning W, Van de Sanden M and Kessels W 2009 J. Phys. D: Appl. Phys. 42 073001
-
(2009)
J. Phys. D: Appl. Phys.
, vol.42
, Issue.7
-
-
Langereis, E.1
Heil, S.2
Knoops, H.3
Keuning, W.4
Van De Sanden, M.5
Kessels, W.6
-
12
-
-
0037156103
-
Atomic layer deposition (ALD): From precursors to thin film structures
-
DOI 10.1016/S0040-6090(02)00117-7, PII S0040609002001177
-
Leskelä M and Ritala M 2002 Thin Solid Films 409 138 (Pubitemid 34524820)
-
(2002)
Thin Solid Films
, vol.409
, Issue.1
, pp. 138-146
-
-
Leskela, M.1
Ritala, M.2
-
15
-
-
0034839628
-
In situ mass spectrometry study on atomic layer deposition from metal (Ti, Ta, and Nb) ethoxides and water
-
DOI 10.1021/cm0011110
-
Rahtu A, Kukli K and Ritala M 2001 Chem. Mater. 13 817 (Pubitemid 32844954)
-
(2001)
Chemistry of Materials
, vol.13
, Issue.3
, pp. 817-823
-
-
Rahtu, A.1
Kukli, K.2
Ritala, M.3
-
16
-
-
73849111615
-
-
10.1021/jp907940u 1932-7447 C
-
Rose M, Niinistö J, Michalowski P, Gerlich L, Wilde L, Endler I and Bartha J W 2009 J. Phys. Chem. C 113 21825
-
(2009)
J. Phys. Chem.
, vol.113
, Issue.52
, pp. 21825
-
-
Rose, M.1
Niinistö, J.2
Michalowski, P.3
Gerlich, L.4
Wilde, L.5
Endler, I.6
Bartha, J.W.7
-
25
-
-
28344457990
-
In situ infrared spectroscopy of hafnium oxide growth on hydrogen-terminated silicon surfaces by atomic layer deposition
-
DOI 10.1063/1.2058226, 133103
-
Ho M T, Wang Y, Brewer R, Wielunski L, Chabal YJ, Moumen N and Boleslawski M 2005 Appl. Phys. Lett. 87 133103 (Pubitemid 41717304)
-
(2005)
Applied Physics Letters
, vol.87
, Issue.13
, pp. 1-3
-
-
Ho, M.-T.1
Wang, Y.2
Brewer, R.T.3
Wielunski, L.S.4
Chabal, Y.J.5
Moumen, N.6
Boleslawski, M.7
-
26
-
-
33846237263
-
Infrared characterization of hafnium oxide grown by atomic layer deposition using ozone as the oxygen precursor
-
DOI 10.1063/1.2430908
-
Wang Y, Dai M, Ho M T, Wielunski L S and Chabal Y J 2007 Appl. Phys. Lett. 90 022906 (Pubitemid 46105593)
-
(2007)
Applied Physics Letters
, vol.90
, Issue.2
, pp. 022906
-
-
Wang, Y.1
Dai, M.2
Ho, M.-T.3
Wielunski, L.S.4
Chabal, Y.J.5
-
28
-
-
80053070497
-
-
1932-7447 C
-
Li K, Li S, Li N, Klein T M and Dixon D A 2011 J. Phys. Chem. C 115 18560
-
(2011)
J. Phys. Chem.
, vol.115
, pp. 18560
-
-
Li, K.1
Li, S.2
Li, N.3
Klein, T.M.4
Dixon, D.A.5
-
29
-
-
0001285951
-
-
10.1088/0034-4885/45/7/002 0034-4885
-
Weightman P 1982 Rep. Prog. Phys. 45 753
-
(1982)
Rep. Prog. Phys.
, vol.45
, Issue.7
, pp. 753
-
-
Weightman, P.1
-
31
-
-
84857054604
-
-
10.1007/s11051-011-0319-x 1388-0764
-
Tallarida M, Weisheit M, Kolanek K, Michling M, Engelmann H J and Schmeisser D 2011 J. Nanopart. Res. 13 5975
-
(2011)
J. Nanopart. Res.
, vol.13
, Issue.11
, pp. 5975
-
-
Tallarida, M.1
Weisheit, M.2
Kolanek, K.3
Michling, M.4
Engelmann, H.J.5
Schmeisser, D.6
-
32
-
-
33646139781
-
-
Schmeisser D, Hoffmann P and Beuckert G 2005 Materials for Information Technology, Devices, Interconnects and Packaging, Engineering (New York: Springer)
-
(2005)
Materials for Information Technology, Devices, Interconnects and Packaging, Engineering
-
-
Schmeisser, D.1
Hoffmann, P.2
Beuckert, G.3
-
33
-
-
84875827827
-
-
10.1063/1.1757805 0094-243X
-
Follath R, Schmidt J S, Siewert F, Holldack K, Zeschke T, Frentrup W, Schmitz D and Sawhney K J S 2003 AIP Conf. Proc. 705 348
-
(2003)
AIP Conf. Proc.
, vol.705
, pp. 348
-
-
Follath, R.1
Schmidt, J.S.2
Siewert, F.3
Holldack, K.4
Zeschke, T.5
Frentrup, W.6
Schmitz, D.7
Sawhney, K.J.S.8
-
36
-
-
33751099033
-
The effect of interfacial layer properties on the performance of Hf-based gate stack devices
-
DOI 10.1063/1.2362905
-
Bersuker G et al 2006 J. Appl. Phys. 100 094108 (Pubitemid 44772613)
-
(2006)
Journal of Applied Physics
, vol.100
, Issue.9
, pp. 094108
-
-
Bersuker, G.1
Park, C.S.2
Barnett, J.3
Lysaght, P.S.4
Kirsch, P.D.5
Young, C.D.6
Choi, R.7
Lee, B.H.8
Foran, B.9
Van Benthem, K.10
Pennycook, S.J.11
Lenahan, P.M.12
Ryan, J.T.13
-
37
-
-
0037955833
-
-
10.1557/PROC-745-N5.11 1946-4274
-
Delabie A, Caymax M, Maes J, Bajolet P and Brijs B 2003 Mater. Res. Soc. Symp. Proc. 745 N5.11
-
(2003)
Mater. Res. Soc. Symp. Proc.
, vol.745
, pp. 511
-
-
Delabie, A.1
Caymax, M.2
Maes, J.3
Bajolet, P.4
Brijs, B.5
-
38
-
-
3343006353
-
-
10.1103/PhysRevB.38.6084 0163-1829 B
-
Himpsel F, McFeely F, Taleb-Ibrahimi A, Yarmoff J and Hollinger G 1988 Phys. Rev. B 38 6084
-
(1988)
Phys. Rev.
, vol.38
, Issue.9
, pp. 6084
-
-
Himpsel, F.1
McFeely, F.2
Taleb-Ibrahimi, A.3
Yarmoff, J.4
Hollinger, G.5
-
40
-
-
0034894442
-
-
10.1103/PhysRevB.63.205310 0163-1829 B 205310
-
Oh J H, Yeom H, Hagimoto Y, Ono K, Oshima M, Hirashita N, Nywa M, Toriumi A and Kakizaki A 2001 Phys. Rev. B 63 205310
-
(2001)
Phys. Rev.
, vol.63
, Issue.20
-
-
Oh, J.H.1
Yeom, H.2
Hagimoto, Y.3
Ono, K.4
Oshima, M.5
Hirashita, N.6
Nywa, M.7
Toriumi, A.8
Kakizaki, A.9
-
41
-
-
0037457115
-
-
10.1016/S0040-6090(02)01198-7 0040-6090
-
Renault O 2003 Thin Solid Films 428 190
-
(2003)
Thin Solid Films
, vol.428
, Issue.1-2
, pp. 190
-
-
Renault, O.1
-
42
-
-
4344563389
-
-
10.1116/1.1761186 0734-2101 A
-
Senzaki Y, Park S, Chatham H, Bartholomew L and Nieveen W 2004 J. Vac. Sci. Technol. A 22 1175
-
(2004)
J. Vac. Sci. Technol.
, vol.22
, Issue.4
, pp. 1175
-
-
Senzaki, Y.1
Park, S.2
Chatham, H.3
Bartholomew, L.4
Nieveen, W.5
-
43
-
-
12844267454
-
3-Nitrided Si(100)
-
DOI 10.1143/JJAP.43.7890, Dielectric Thin Films for Future ULSI Devices
-
Nakagawa H, Ohta A, Takeno F, Nagamachi S, Murakami H, Higashi S and Miyazaki S 2004 Japan. J. Appl. Phys. 43 7890 (Pubitemid 40169160)
-
(2004)
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
, vol.43
, Issue.11 B
, pp. 7890-7894
-
-
Nakagawa, H.1
Ohta, A.2
Takeno, F.3
Nagamachi, S.4
Murakami, H.5
Higashi, S.6
Miyazaki, S.7
-
45
-
-
79961068166
-
-
10.1103/PhysRevB.83.115329 1098-0121 B 115329
-
Goncharova L, Dalponte M, Feng T, Gustafsson T, Garfunkel E, Lysaght P and Bersuker G 2011 Phys. Rev. B 83 115329
-
(2011)
Phys. Rev.
, vol.83
, Issue.11
-
-
Goncharova, L.1
Dalponte, M.2
Feng, T.3
Gustafsson, T.4
Garfunkel, E.5
Lysaght, P.6
Bersuker, G.7
-
46
-
-
0036641684
-
2 interface
-
DOI 10.1002/sia.1424
-
Cerofolini G F, Galati C and Renna L 2002 Surf. Interface Anal. 33 583 (Pubitemid 34792627)
-
(2002)
Surface and Interface Analysis
, vol.33
, Issue.7
, pp. 583-590
-
-
O'Hare, L.-A.1
Smith, J.A.2
Leadley, S.R.3
Parbhoo, B.4
Goodwin, A.J.5
Watts, J.F.6
-
47
-
-
34347385632
-
-
10.1103/PhysRevB.75.241302 1098-0121 B 241302
-
Tang C and Ramprasad R 2007 Phys. Rev. B 75 241302
-
(2007)
Phys. Rev.
, vol.75
, Issue.24
-
-
Tang, C.1
Ramprasad, R.2
-
48
-
-
0042341502
-
-
10.1063/1.1590743 0003-6951
-
Ye P D et al 2003 Appl. Phys. Lett. 83 180
-
(2003)
Appl. Phys. Lett.
, vol.83
, Issue.1
, pp. 180
-
-
Ye, P.D.1
-
49
-
-
20844440321
-
3 gate dielectrics on GaAs grown by atomic layer deposition
-
DOI 10.1063/1.1899745, 152904
-
Frank M, Wilk G D, Starodub D and Gustafsson T 2005 Appl. Phys. Lett. 86 152904 (Pubitemid 40861439)
-
(2005)
Applied Physics Letters
, vol.86
, Issue.15
, pp. 1-3
-
-
Frank, M.M.1
Wilk, G.D.2
Starodub, D.3
Gustafsson, T.4
Garfunkel, E.5
Chabal, Y.J.6
Grazul, J.7
Muller, D.A.8
-
51
-
-
39749157907
-
GaAs interfacial self-cleaning by atomic layer deposition
-
DOI 10.1063/1.2883956
-
Hinkle C L et al 2008 Appl. Phys. Lett. 92 071901 (Pubitemid 351304840)
-
(2008)
Applied Physics Letters
, vol.92
, Issue.7
, pp. 071901
-
-
Hinkle, C.L.1
Sonnet, A.M.2
Vogel, E.M.3
McDonnell, S.4
Hughes, G.J.5
Milojevic, M.6
Lee, B.7
Aguirre-Tostado, F.S.8
Choi, K.J.9
Kim, H.C.10
Kim, J.11
Wallace, R.M.12
-
52
-
-
65449127795
-
-
10.1063/1.3120546 0003-6951 162101
-
Hinkle C L, Milojevic M, Brennan B, Sonnet A M, Aguirre-Tostado F S, Hughes G J, Vogel E M and Wallace R M 2009 Appl. Phys. Lett. 94 162101
-
(2009)
Appl. Phys. Lett.
, vol.94
, Issue.16
-
-
Hinkle, C.L.1
Milojevic, M.2
Brennan, B.3
Sonnet, A.M.4
Aguirre-Tostado, F.S.5
Hughes, G.J.6
Vogel, E.M.7
Wallace, R.M.8
-
53
-
-
71549142268
-
-
10.1063/1.3268449 0003-6951 212902
-
Milojevic M, Contreras-Guerrero R, Lopez-Lopez M, Kim J and Wallace R M 2009 Appl. Phys. Lett. 95 212902
-
(2009)
Appl. Phys. Lett.
, vol.95
, Issue.21
-
-
Milojevic, M.1
Contreras-Guerrero, R.2
Lopez-Lopez, M.3
Kim, J.4
Wallace, R.M.5
-
55
-
-
66749167599
-
-
10.1063/1.3148723 0003-6951 222108
-
Lee H D, Feng T, Yu L, Mastrogiovanni D, Wan A, Gustafsson T and Garfunkel E 2009 Appl. Phys. Lett. 94 222108
-
(2009)
Appl. Phys. Lett.
, vol.94
, Issue.22
-
-
Lee, H.D.1
Feng, T.2
Yu, L.3
Mastrogiovanni, D.4
Wan, A.5
Gustafsson, T.6
Garfunkel, E.7
-
57
-
-
77954334694
-
-
10.1002/pssc.200982425 1862-6351 c
-
Lee H D, Feng T, Yu L, Mastrogiovanni D, Wan A, Garfunkel E and Gustafsson T 2010 Phys. Status Solidi c 7 260
-
(2010)
Phys. Status Solidi
, vol.7
, Issue.2
, pp. 260
-
-
Lee, H.D.1
Feng, T.2
Yu, L.3
Mastrogiovanni, D.4
Wan, A.5
Garfunkel, E.6
Gustafsson, T.7
-
59
-
-
79961084696
-
-
10.1063/1.3615784 0003-6951 042906
-
Tallarida M, Adelmann C, Delabie A, Van Elshocht S, Caymax M and Schmeisser D 2011 Appl. Phys. Lett. 99 042906
-
(2011)
Appl. Phys. Lett.
, vol.99
, Issue.4
-
-
Tallarida, M.1
Adelmann, C.2
Delabie, A.3
Van Elshocht, S.4
Caymax, M.5
Schmeisser, D.6
-
60
-
-
79959974473
-
-
10.1021/cm200276z 0897-4756
-
Tallarida M, Kukli K, Michling M, Ritala M, Leskelä M and Schmeisser D 2011 Chem. Mater. 23 3159
-
(2011)
Chem. Mater.
, vol.23
, Issue.13
, pp. 3159
-
-
Tallarida, M.1
Kukli, K.2
Michling, M.3
Ritala, M.4
Leskelä, M.5
Schmeisser, D.6
-
61
-
-
33751235850
-
2 core-shell nanowire dye-sensitized solar cells
-
DOI 10.1021/jp0648644
-
Law M, Greene L E, Radenovic A, Kuykendall T, Liphardt J and Yang P 2006 J. Phys. Chem. B 110 22652 (Pubitemid 44787592)
-
(2006)
Journal of Physical Chemistry B
, vol.110
, Issue.45
, pp. 22652-22663
-
-
Law, M.1
Greene, L.E.2
Radenovic, A.3
Kuykendall, T.4
Liphardt, J.5
Yang, P.6
-
62
-
-
67651146667
-
-
10.1088/0957-4484/20/30/305201 0957-4484 305201
-
Tien T C, Pan F M, Wang L-P, Lee C H, Tung Y L, Tsai S Y, Lin C, Tsai F Y and Chen S J 2009 Nanotechnology 20 305201
-
(2009)
Nanotechnology
, vol.20
, Issue.30
-
-
Tien, T.C.1
Pan, F.M.2
Wang, L.-P.3
Lee, C.H.4
Tung, Y.L.5
Tsai, S.Y.6
Lin, C.7
Tsai, F.Y.8
Chen, S.J.9
-
64
-
-
77952999266
-
-
10.1021/jp1023229 1932-7447 C
-
Tien T C, Pan F M, Wang L-P, Tsai F Y and Lin C 2010 J. Phys. Chem. C 114 10048
-
(2010)
J. Phys. Chem.
, vol.114
, Issue.21
, pp. 10048
-
-
Tien, T.C.1
Pan, F.M.2
Wang, L.-P.3
Tsai, F.Y.4
Lin, C.5
-
66
-
-
79954491324
-
-
10.1039/c0sc00578a 2041-6520
-
Le Formal F, Tetreault N, Cornuz M, Moehl T, Graetzel M and Sivula K 2011 Chem. Sci. 2 737
-
(2011)
Chem. Sci.
, vol.2
, Issue.4
, pp. 737
-
-
Le Formal, F.1
Tetreault, N.2
Cornuz, M.3
Moehl, T.4
Graetzel, M.5
Sivula, K.6
|