Substrate reactivity effects in the atomic layer deposition of aluminum oxide from trimethylaluminum on ruthenium

Chemistry of Materials

Volumn 23, Issue 13, 2011, Pages 3159-3168

  Tallarida, Massimo ^a   Kukli, Kaupo ^b,c   Michling, Marcel ^a   Ritala, Mikko ^b   Leskelä, Markku ^b   Schmeisser, Dieter ^a  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF HELSINKI   (Finland)

^c UNIVERSITY OF TARTU   (Estonia)

Author keywords

Al2O3; Atomic layer deposition; in situ XPS; interfaces; photoelectron spectroscopy; reactivity; Ru; RuO2; surfaces; synchrotron radiation; thin films

Indexed keywords

ACTIVE SITE; ALUMINUM OXIDES; ATOMIC LAYER; BAND OFFSETS; DIRECT REACTIONS; IN-SITU; RU FILM; RUO2; SUBSTRATE SURFACE; TRIMETHYLALUMINUM;

ADSORPTION; ALUMINUM; ALUMINUM COATINGS; ATOMIC LAYER DEPOSITION; ATOMIC SPECTROSCOPY; ATOMS; OXYGEN; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; PHOTONS; RUTHENIUM; RUTHENIUM ALLOYS; RUTHENIUM COMPOUNDS;

SUBSTRATES;

EID: 79959974473     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm200276z     Document Type: Article

References (45)

1. Suntola, T. Thin Solid Films 1992, 216, 84
2. Masel, R. I. Principles of Adsorption and Reaction on Solid Surfaces; Wiley: New York, 1996.
3. Kim, S. K.; Hwang, G. W.; Kim, W.-D.; Hwang, C. S. Electrochem. Solid-State Lett. 2006, 9, F5
4. Choi, G.-J.; Kim, S. K.; Lee, S. Y.; Park, W. Y.; Seo, M.; Choi, B. J.; Hwang, C. S. J. Electrochem. Soc. 2009, 156, G71-G77
5. Lüth, H. Solid Surfaces, Interfaces and Thin Films, 4 th ed.; Springer: Berlin, Germany, 2001.
6. Baker, L.; Cavanagh, A. S.; Seghete, D.; George, S. M.; Mackus, A. J. M.; Kessels, W. M. M.; Liu, Z. Y.; Wagner, F. T. J. Appl. Phys. 2011, 109, 084333
7. Kukli, K.; Aarik, J.; Aidla, A.; Uustare, T.; Jǒgi, I.; Lu, J.; Tallarida, M.; Kemell, M.; Kiisler, A.-A.; Ritala, M.; Leskelä, M. J. Cryst. Growth 2010, 312, 2025
8. Mars, P.; van Krevelen, D. W. Chem. Eng. Sci. Spec. 1954, Suppl. 3, 41.
9. Doornkamp, C.; Ponec, V. J. Mol. Catal. A: Chem. 2000, 162, 19
10. Widjaja, Y.; Musgrave, C. B. Appl. Phys. Lett. 2002, 80, 3304
11. Halls, M. D.; Raghavachari, K. J. Chem. Phys. 2003, 118, 10221
12. Jeloaica, L.; Estève, A.; Djafari Rouhani, M.; Estève, D. Appl. Phys. Lett. 2003, 83, 21
13. Elliott, S. D.; Pinto, H. P. J. Electroceram. 2004, 13, 117
14. Shi, Y.; Sun, Q.-Q.; Dong, L.; Liu, H.; Ding, S.-J.; Zhang, W. Chin. Phys. Lett. 2009, 26, 053101
15. Zhao, C.; Pawlak, M. A.; Popovici, M.; Schaekers, M.; Sleeckx, E.; Vancoille, E.; Wouters, D. J.; Tokei, Zs.; Kittl, J. A. ECS Trans. 2009, 25 (4) 377
16. Zhong, H.; Heuss, G.; Misra, V.; Luan, H.; Lee, C.-H.; Kwong, D.-L. Appl. Phys. Lett. 2001, 78, 1134
17. Rangan, S.; Bersch, E.; Bartynski, R. A.; Garfunkel, E.; Vescovo, E. Phys. Rev. B 2009, 79, 075106
18. Li, Z.; Houssa, M.; Schram, T.; De Gendt, S.; De Meryer, K. Appl. Phys. Lett. 2009, 95, 183506
19. Burke, L. D.; Naser, N. S.; Sharna, R. J. Appl. Electrochem. 2008, 38, 377
20. Kim, S. K.; Hoffmann-Eifert, S.; Waser, R. ECS Trans. 2009, 25 (4) 289
21. Kim, W.-H.; Park, S.-J.; Kim, D. Y.; Kim, H. J. Korean Phys. Soc. 2009, 55, 32
22. Park, S.; Kanjolia, R.; Anthis, J.; Odedra, R.; Boag, N.; Wielunski, L.; Chabal, Y. Chem. Mater. 2010, 22, 4867
23. Li, Q.; Li, K. B.; Huan, A. C. H.; Chai, J. W.; Pan, J. S.; Ong, C. K. Appl. Phys. Lett. 2004, 85, 6155
24. Over, H.; Kim, Y. D.; Seitsonen, A. P.; Wendt, S.; Lundgren, E.; Schmid, M.; Varga, P.; Morgante, A.; Ertl, G. Science 2000, 287, 1474
25. Böttcher, A.; Starke, U.; Conrad, H.; Blume, R.; Gregoratti, L.; Kaulich, B.; Barinov, A.; Kiskinova, M. J. Chem. Phys. 2002, 117, 8104
26. Over, H.; Knapp, M.; Lundgren, E.; Seitsonen, A. P.; Schmid, M.; Varga, P. Chem. Phys. Chem. 2004, 5, 167
27. Halls, M.; Raghavachari, K.; Frank, M. M.; Chabal, Y. Phys. Rev. B 2003, 68, 161302
28. Goldstein, D. N.; McCormick, J. A.; George, S. M. J. Phys. Chem. C 2008, 112, 19530
29. Juppo, M.; Rahtu, A.; Ritala, M.; Leskelä, M. Langmuir 2000, 16, 4034
30. Wind, R. W.; Fabreguette, F. H.; Sechrist, Z. A.; George, S. M. J. Appl. Phys. 2009, 105, 074309
31. Puurunen, R. J. Appl. Phys. 2005, 97, 121301
32. Won, S.-J.; Suh, S.; Lee, S. W.; Choi, G.-J.; Hwang, C. S.; Kim, H. J. Electrochem. Solid-State Lett. 2010, 13, G13
33. Lee, S. W.; Han, J. W.; Kim, S. K.; Han, S.; Lee, W.; Hwang, C. S. Chem. Mater. 2011, 23, 976
34. Tallarida, M.; Karavaev, K.; Schmeisser, D. J. Appl. Phys. 2008, 104, 064116
35. Tallarida, M.; Weisheit, M.; Kolanek, K.; Michling, M.; Engelmann, H.-J.; Schmeisser, D. J. Nanopart. Res. 2011, 10.1007/s11051-011-0319-x
36. Kukli, K.; Kemell, M.; Puukilainen, E.; Aarik, J.; Aidla, A.; Sajavaara, T.; Laitinen, M.; Tallarida, M.; Sundqvist, J.; Ritala, M.; Leskelä, M. J. Electrochem. Soc. 2011, 158, D158
37. Schmeisser, D.; Hoffmann, P.; Beuckert, G. Materials for Information Technology, Devices, Interconnects and Packaging, Engineering Materials and Processes; Springer: New York, 2005.
38. Madhavaram, H.; Idriss, H.; Wendt, S.; Kim, Y. D.; Knapp, M.; Over, H.; Assmann, J.; Löffler, E.; Muhler, M. J. Catal. 2001, 202, 296
39. Blume, R.; Niehus, H.; Conrad, H.; Böttcher, A.; Aballe, L.; Gregoratti, L.; Barinov, A.; Kiskinova, M. J. Phys. Chem. B 2005, 109, 14052
40. Knop-Gericke, A.; Kleimenov, E.; Hävecker, M.; Blume, R.; Teschner, D.; Zafeiratos, S.; Schlögl, R.; Bukhtiyarov, V. I.; Kaichev, V. V.; Prosvirin, I. P.; Nizovskii, A. I.; Bluhm, H.; Barinov, A.; Dudin, P.; Kiskinova, M. Adv. Catal. 2009, 52, 213
41. Over, H.; Seitsonen, A. P.; Lundgren, E.; Smedh, M.; Andersen, J. N. Surf. Sci. Lett. 2002, 504, L196
42. Armstrong, B. H. J. Quant. Spectrosc. Radat. Transfer. 1967, 7, 61
43. Aguirre-Tostado, F.; Milojevic, M.; Lee, B.; Kim, J.; Wallace, R. Appl. Phys. Lett. 2008, 93, 172907
44. Aaltonen, T.; Ritala, M.; Sajavaara, T.; Keinonen, J.; Leskelä, M. Atomic Layer Deposition of Platinum Thin Films Chem. Mater. 2003, 15, 1924
45. Tallarida, M.; Karavaev, K.; Schmeisser, D. ECS Trans. 2009, 25, 253