Accounting for anomalous oxidation states of silicon at the Si/SiO2 interface

Surface and Interface Analysis

Volumn 33, Issue 7, 2002, Pages 583-590

  O'Hare, Lesley Ann ^a   Smith, Julie A ^b   Leadley, Stuart R ^a   Parbhoo, Bhukan ^a   Goodwin, Andrew J ^a   Watts, John F ^b  

^a DOW CORNING LTD   (United Kingdom)

^b UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Anomalous oxidation states; Hydrogen terminated Si(100); Number distribution; Si SiO2 interface; Silicon oxidation

Indexed keywords

BONDING; CRYSTALLINE MATERIALS; HYDROGEN; INTERFACES (MATERIALS); OXIDATION; SILICA; X RAY PHOTOELECTRON SPECTROSCOPY;

ANOMALOUS OXIDATION STATES; NUMBER DISTRIBUTION;

SILICON;

EID: 0036641684     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1424     Document Type: Article

References (26)