Growth and interface of HfO2 films on H-terminated Si from a TDMAH and H2O atomic layer deposition process

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 26, Issue 5, 2008, Pages 1235-1240

  Hackley, Justin C ^a   Demaree, J Derek ^b   Gougousi, Theodosia ^a  

^a UNIVERSITY OF MARYLAND BALTIMORE COUNTY   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION TEMPERATURE; INTERFACIAL LAYER; PROCESS CYCLING;

AMINES; ATOMIC LAYER DEPOSITION; ATOMIC SPECTROSCOPY; HAFNIUM; HAFNIUM COMPOUNDS; LIQUID PHASE EPITAXY; MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; MOLECULAR ORBITALS; MOLECULAR SPECTROSCOPY; PHOTOELECTRON SPECTROSCOPY; PHYSICAL VAPOR DEPOSITION; PULSED LASER DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SPECTROSCOPIC ELLIPSOMETRY; SPONTANEOUS EMISSION; THICK FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

FILM GROWTH;

EID: 50849085440     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2965813     Document Type: Article

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