Interface properties of ultra-thin HfO2 films grown by atomic layer deposition on SiO2/Si

Thin Solid Films

Volumn 428, Issue 1-2, 2003, Pages 190-194

  Renault, O ^a   Samour, D ^a   Rouchon, D ^a   Holliger, Ph ^a   Papon, A M ^a   Blin, D ^b   Marthon, S ^a  

^a CEA LETI   (France)

^b ASM France   (France)

Author keywords

Depth profiling; High k dielectrics; X ray photoelectron spectroscopy

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL BONDS; DEPOSITION; DIFFUSION; FILM GROWTH; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HIGH RESOLUTION ELECTRON MICROSCOPY; MOS DEVICES; SECONDARY ION MASS SPECTROMETRY; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION;

ULTRATHIN FILMS;

EID: 0037457115     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01198-7     Document Type: Conference Paper

References (6)

1. Lee B.H., Kang L., Qi W.-J., Nieh R., Onishi K., Lee J.C. Tech. Dig. Int. Electron Devices Meet. 1999;133.
2. Rouchon D., Rochat N., Gustavo F., Chabli A., Besson P., Renault O. Surf. Interface Anal. 34:2002;445.
3. Holliger P., Laugier F., Dupuy J.C. Surf. Interface Anal. 34:2002;472.
4. Cosnier V., Olivier M., Théret G., André B. J. Vac. Sci. Technol. A. 19:2001;2267.
5. Green M.L., Gusev E.P., Degraeve R., Garfunkel E.L. J. Appl. Phys. 90:2001;2057.
6. Renault O., Gosset L.G., Rouchon D., Ermolieff A. J. Vac. Sci. Technol. A. 20:(6):2002;1867.