Surface chemistry and Fermi level movement during the self-cleaning of GaAs by trimethyl-aluminum

Applied Physics Letters

Volumn 99, Issue 4, 2011, Pages

  Tallarida, M ^a   Adelmann, C ^b   Delabie, A ^b   Van Elshocht, S ^b   Caymax, M ^b   Schmeisser, D ^a  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS DENSITY; GAAS; IN-SITU; NATIVE OXIDES; P-GAAS(100); VALENCE BAND EDGES;

ALUMINUM; FERMI LEVEL; GALLIUM ARSENIDE; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING GALLIUM; SURFACE CHEMISTRY; SYNCHROTRON RADIATION;

GALLIUM ALLOYS;

EID: 79961084696     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3615784     Document Type: Article

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