The initial atomic layer deposition of Hf O2 Si (001) as followed in situ by synchrotron radiation photoelectron spectroscopy

Journal of Applied Physics

Volumn 104, Issue 6, 2008, Pages

  Tallarida, Massimo ^a   Karavaev, Konstantin ^a   Schmeisser, Dieter ^a  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ABSORPTION SPECTROSCOPY; ATOMIC PHYSICS; ATOMS; ELECTROMAGNETIC WAVE ABSORPTION; ENERGY ABSORPTION; HAFNIUM; HAFNIUM COMPOUNDS; MOLECULAR ORBITALS; MOLECULAR SPECTROSCOPY; PHOTOELECTRON SPECTROSCOPY; PHYSICAL VAPOR DEPOSITION; PULSED LASER DEPOSITION; SILICON; SPECTRUM ANALYSIS; X RAY ABSORPTION; X RAY PHOTOELECTRON SPECTROSCOPY; X RAY SPECTROSCOPY;

ATOMIC LAYER DEPOSITION (ALD; ATOMIC LAYERS; CHEMICAL STATES; CORE-LEVEL LINES; EARLY STAGES; GROWTH PROPERTIES; HIGH RESOLUTIONS; SECOND LAYER; SI(0 0 1); TWO LAYERS; X-RAY ABSORPTION SPECTRUM;

ATOMIC LAYER DEPOSITION;

EID: 53249097791     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2978362     Document Type: Article

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