Atomic layer deposition of nanolaminate oxide films on Si

Journal of Nanoparticle Research

Volumn 13, Issue 11, 2011, Pages 5975-5983

  Tallarida, M ^a   Weisheit, M ^b   Kolanek, K ^a   Michling, M ^a   Engelmann, H J ^b   Schmeisser, D ^a  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b GLOBALFOUNDRIES Dresden Module One LLC and Co KG   (Germany)

Author keywords

Al oxide; Atomic layer deposition; Hf oxide; Interfaces; Nanocoatings; Nanolaminate; Synchrotron radiation; Synthesis; Thin layers; XPS

Indexed keywords

AL-OXIDE; ATOMIC LAYER; HF-OXIDE; NANO-COATINGS; NANOLAMINATE; THIN LAYERS;

ALUMINUM; ATOMIC LAYER DEPOSITION; BINDING ENERGY; FILM GROWTH; HAFNIUM; HAFNIUM OXIDES; INTERFACES (MATERIALS); OXIDE FILMS; SILICON; SILICON COMPOUNDS; SYNCHROTRON RADIATION; SYNTHESIS (CHEMICAL); THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

DEPOSITION;

ALUMINUM OXIDE; HAFNIUM; MOLECULAR LAYER; NANOFILM; NANOLAMINATE OXIDE; SILICON; UNCLASSIFIED DRUG;

ATOMIC LAYER DEPOSITION; ATOMIC PARTICLE; CHEMICAL BINDING; CHEMICAL INTERACTION; CHEMICAL REACTION; CONFERENCE PAPER; CONFORMATION; PRIORITY JOURNAL; SYNCHROTRON RADIATION;

EID: 84857054604     PISSN: 13880764     EISSN: 1572896X     Source Type: Journal    
DOI: 10.1007/s11051-011-0319-x     Document Type: Conference Paper

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