Interfacial energy levels and related properties of atomic-layer-deposited Al2O3 films on nanoporous TiO2 electrodes of dye-sensitized solar cells

Nanotechnology

Volumn 20, Issue 30, 2009, Pages

  Tien, Ta Chang ^a   Pan, Fu Ming ^a   Wang, Lih Ping ^b   Lee, Chia Hua ^b   Tung, Yung Liang ^b   Tsai, Song Yeu ^b   Lin, Ching ^c   Tsai, Feng Yu ^c   Chen, Su Jen ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; BAND GAPS; BARRIER HEIGHTS; DYE SENSITIZED; DYE-SENSITIZED SOLAR CELL; DYE-SENSITIZED SOLAR CELLS; INTERFACIAL DIPOLE LAYERS; INTERFACIAL REACTIONS; LOW TEMPERATURES; N719 DYE; NANOPOROUS TIO; OPTIMAL PERFORMANCE; POWER CONVERSION EFFICIENCIES; PURE AL; TIO; VALENCE-BAND MAXIMUMS; WORK-FUNCTION DIFFERENCE;

ATOMS; CONVERSION EFFICIENCY; ELECTRODES; ELECTRON SPECTROSCOPY; INTERFACIAL ENERGY; MONOLAYERS; PHASE INTERFACES; PHOTOELECTROCHEMICAL CELLS; PHOTOVOLTAIC CELLS; SOLAR CELLS; SOLAR ENERGY; WORK FUNCTION;

ALUMINUM;

ALUMINUM OXIDE; DYE; TITANIUM DIOXIDE;

ARTICLE; DIPOLE; ELECTRODE; ENERGY; NANOPORE; PRIORITY JOURNAL; SPECTROSCOPY; THICKNESS;

EID: 67651146667     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/30/305201     Document Type: Article

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