Heteroepitaxy and selective area heteroepitaxy for silicon photonics

Current Opinion in Solid State and Materials Science

Volumn 16, Issue 2, 2012, Pages 91-99

  Lourdudoss, Sebastian ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Epitaxial lateral overgrowth; Heteroepitaxy; III V on Si; Monolithic integration; Selective area growth; Selective area heteroepitaxy; SiGeSn on Si; Silicon photonics

Indexed keywords

EPITAXIAL LATERAL OVERGROWTH; III-V ON SI; MONOLITHIC INTEGRATION; SELECTIVE AREA GROWTH; SELECTIVE AREAS; SILICON PHOTONICS;

GALLIUM ALLOYS; MONOLITHIC INTEGRATED CIRCUITS; NITRIDES; PHOTONIC DEVICES; QUANTUM WELL LASERS; SILICON; SILICON OXIDES;

EPITAXIAL GROWTH;

EID: 84860202099     PISSN: 13590286     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cossms.2012.01.003     Document Type: Review

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