High performance, waveguide integrated Ge photodetectors

Optics Express

Volumn 15, Issue 7, 2007, Pages 3916-3921

  Ahn, Donghwan ^a   Hong, Ching Yin ^a   Liu, Jifeng ^a   Giziewicz, Wojciech ^a   Beals, Mark ^a   Kimerling, Lionel C ^a   Michel, Jurgen ^a   Chen, Jian ^b   Kärtner, Franz X ^b  

^a USA   (United States)

^b Department of Electrical Engineering and Computer Science   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DARK CURRENTS; ENERGY GAP; GERMANIUM; PHOTONIC DEVICES; SILICON NITRIDE; WAVEGUIDES;

ACTIVE PHOTONIC DEVICES; CURRENT INTEGRATED CIRCUIT PROCESS; SILICON OXYNITRIDE;

PHOTODETECTORS;

EID: 34147101103     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.15.003916     Document Type: Article

References (15)

1. L. C. Kimerling, L. Dal Negro, S. Saini, Y. Yi, D. Ahn, S. Akiyama, D. Cannon, J. Liu, J. G. Sandland, D. Sparacin, J. Michel, K. Wada and M. R. Watts, "Monolithic silicon microphotonics," in Silicon Photonics: Topics in Applied Physics, L. Pavesi and D. J. Lockwood, eds., (Springer, Berlin, 2004) Vol. 94.
2. R. A. Soref, "Silicon-Based Optoelectronics," Proceedings of IEEE 81, 1687-1706 (1993).
3. Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, " Micrometre-scale silicon electro-optic modulator," Nature 435, 325-327, (2005).
4. D. K. Sparacin, S. J. Spector, and L. C. Kimerling, "Silicon waveguide sidewall smoothing by wet chemical oxidation," IEEE J. Lightwave Technol. 23, 2455-2461 (2005).
5. H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang and M. Paniccia, "A continuous-wave Raman silicon laser," Nature 433, 725-728 (2005).
6. L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y-K. Chen, T. Conway, D. M. Gill, M. Grove, C-Y Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K-Y. Tu, A. E. White, and C. W. Wong, "Electronic-photonic integrated circuits on the CMOS platform," Proc. SPIE 6125, 612502 (2006).
7. C. Gunn, "10Gb/s CMOS photonics technology," Proc. SPIE 6125, 612501 (2006).
8. D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D. T. Danielson, S. Jongthammanurak, J. Michel, and L. C. Kimerling, "Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications," Appl. Phys. Lett., 84, 906-908 (2004).
9. G. Dehlinger and S.J. Koester and J. D. Schaub and J. O. Chu and Q.C. Ouyang and A. Grill, "High-Speed Germanium-on-SOI Lateral PIN photodiodes," IEEE Photon. Technol. Lett. 16, 2547-2549 (2004).
10. J. Liu, J. Michel, W. Giziewicz, D. Pan, K. Wada, D. Cannon, L. C. Kimerling, J. Chen, F. O. Ilday, F. X. Kartner and J. Yasaitis, "High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform," Appl. Phys. Lett. 87, 103501 (2005)
11. L. Colace, G. Masini, F. Galluzi, G. Assanto, G. Capellini, L. Di Gaspare, and F. Evangelisti, "Ge/Si(001) photodetector for near infrared light," Solid State Phenom. 54, 55-58 (1997)
12. H. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, "High-quality Ge epilayers on Si with low threading-dislocation densities," Appl. Phys. Lett. 75, 2909-2911 (1999)
13. S. J. Koester, L. Schares, C. L. Schow, G. Dehlinger, and R. A. John "Temperature-dependent analysis of Ge-on-SOI photodetectors and receiver," 3rd IEEE International Conference on Group IV Photonics, (IEEE Cat. No. 06EX1276C), Ottawa, ON, Canada, Sep. 13-15 (2006), pp 179
14. D. Ahn, C.-Y. Hong, J. Michel and L. C. Kimerling, "Efficient Evanescent-Wave Coupling from a SiON Waveguide to a Si p-i-n Photodetector," presented at Materials Research Society Meeting, San Franscisco, CA, 17-21 Apr. (2006). The manuscript to ajournai paper is in preparation.
15. Y. Ishikawa, K. Wada, D. D. Cannon, J. Liu, H.-C. Luan, L. C. Kimerling, "Strain-induced band gap shrinkage in Ge grown on Si substrate," Appl. Phys. Lett. 82, 2044-2046 (2003).