Hydride vapor phase epitaxy revisited

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 3, 1997, Pages 749-767

  Lourdudoss, Sebastian ^a,b,c,d,e   Kjebon, Olle ^a,d,f  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b UNIVERSITY OF MADRAS   (India)

^c Faculté Libre des Sciences et Institut Supérieur d'Agriculture   (France)

^d Swed Institute of Microelectronics   (Sweden)

^e Swed Institute of Microelectronics ^*  (Sweden)

^f UPPSALA UNIVERSITY   (Sweden)

Author keywords

Conformal growth; HBT; Heteroepitaxy; High speed lasers; III V compounds; Integration; Nanostructures; Selective epitaxy; Semi insulating GaInP; Semi insulating InP; VCSEL; VPE

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; HYDRIDES; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR LASERS; VAPOR PHASE EPITAXY;

HIGH SPEED LASERS; HYDRIDE VAPOR PHASE EPITAXY (HVPE); VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

OPTOELECTRONIC DEVICES;

EID: 0031153283     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.640630     Document Type: Article

References (150)

1. W. T. Tsang, Ed., Semiconductors and Semimetals, Lightwave Communications Technology. Orlando, FL: Academic, 1985, vol. 22, pt. A.
2. K. Nakajima, "Liquid phase epitaxy," in GaInAsP Alloy Semiconductors, T. P. Pearsal, Ed. New York: Wiley, 1982, ch. 2.
3. M. B. Small, E. A. Giess, and R. Chez, "Liquid phase epitaxy," in Handbook of Crystal Growth, D. T. J. Hurle, Ed. Amsterdam, The Netherlands: Elsevier, 1994, vol. 3a, ch. 6.
4. G. H. Olsen, "Vapor-phase epitaxy of GaInAsP," in GaInAsP Alloy Semiconductors, T. P. Pearsal, Ed. New York: Wiley, 1982, ch. 1.
5. H. Watanabe, "Halogen transport epitaxy," in Handbook of Crystal Growth, D. T. J. Hurle, Ed. Amsterdam, The Netherlands: Elsevier, 1994, vol. 3a, ch. 1.
6. C. E. C. Wood, "III-V alloy growth by molecular-beam epitaxy," in GaInAsP Alloy Semiconductors, T. P. Pearsal, Ed. New York: Wiley, 1982, ch. 4.
7. C. T. Foxon, "Princiciples of molecular beam epitaxy," in Handbook of Crystal Growth, D. T. J. Hurle, Ed. Amsterdam, The Netherlands: Elsevier, 1994, vol. 3a, ch. 4.
8. M. Razeghi, The MOCVD Challenge, Bristol, U.K.: Adam Hilger, 1989, vol. 1 & 2, IOP Pub. Ltd..
9. G. B. Stringfellow, Organometallic Vapor-Phase Epitaxy. San Diego, CA: Academic, 1989.
10. T. Suntola, "Atomic layer epitaxy," in Handbook of Crystal Growth, D. T. J. Hurle, Ed. Amsterdam, The Netherlands: Elsevier, 1994, vol. 3b, ch. 14.
11. A. Koukitu and H. Seki, "Thermodynamic analysis for InGaAsP epitaxial growth by the chloride-CVD process," J. Cryst. Growth, vol. 49, pp. 325-333, 1980.
12. 1-y CVD: Ga-In-As-P-H-Cl system," J. Cryst. Growth, vol. 48, pp. 359-362, 1980.
13. S. Franchi, C. Pelosi, and G. Attolini, "Equilibrium calculations for VPE-InGaAsP," Revue de Physique Appliquée, vol. 16, no. 1, pp. 1-4, 1981.
14. 1-y solid solutions using gas-solid equilibrium data and a sublattice model," CALPHAD, vol. 18, no. 4, pp. 397-407, 1994.
15. 1-y, vapor phase epitaxy: A comparision between theory and experiment," Materials Chemistry and Physics, vol. 50, no. 1, pp. 70-75, 1997.
16. D. W. Shaw, "Mechanisms in vapor phase epitaxy,in Crystal Growth, C. H. L. Goodman, Ed. New York: Plenum, 1974, vol. 1, ch. 1.
17. G. B. Stringfellow, "Fundamentals of thin film growth," J. Cryst. Growth, vol 137, pp. 212-223, 1994.
18. _, "Fundamental aspects of vapor growth and epitaxy," J. Cryst. Growth, vol 115, pp. 1-11, 1991.
19. B. A. Joyce and C. T. Foxton, "Kinetic studies of growth of III-V compounds," J. Cryst. Growth, vol. 31, pp. 122-129, 1975.
20. D. W. Shaw, "Kinetic aspects in vapor phase epitaxy of III-V compounds," J. Cryst. Growth, vol. 31, pp. 130-141, 1975.
21. R. Cadoret and M. Cadoret, "A theoretical treatment of GaAs growth by vapor phase transport," J. Cryst. Growth, vol. 31, pp. 142-146, 1975.
22. J. B. Loyau, M. Oberlin, A. Oberlin, L. Hollan, and R. Cadoret, "GaAs growth by vapor phase transport. Part I - Study of the effect of supersaturation and surface adsorption," J. Cryst. Growth, vol. 29, pp. 176-186, 1975.
23. R. Cadoret, L. Hollan, J. B. Loyau, M. Oberlin, and A. Oberlin, "GaAs growth by vapor phase transport, Part II-Interpretation of the growth of the {001} faces by the adsorption of gallium monochloride and arsenic molecules," J. Cryst. Growth, vol. 29, pp. 187-194, 1975.
24. R. Cadoret, "Application of the theory of rate processes in the CVD of GaAs," in Current topics in Materials Science, E. Kaldis, Ed. Amsterdam, The Netherlands: North-Holland, 1980, vol. 5, ch. 2.
25. J. L. Laportc, M. Cadoret, and R. Cadoret, "Investigation of the parameters which control the growth of {111} and {111} faces of GaAs by chemical vapor deposit," J. Cryst. Growth, vol. 50, pp. 663-674, 1980.
26. 2 flow rate on the hydride growth of InP," J. Cryst. Growth, vol. 70, pp. 117-122, 1984.
27. R. Cadoret, J. L. Laporte, and M. Harrous, "Approach of the interplay between kinetics and diffusion in hot wall ractors used in V.P.E. of III-V compounds," Mater. Res. Bull., vol. 21, pp. 1259-1267, 1986.
28. M. Harrous, J. L. Laporte, M. Cadoret, C. Pariset, and R. Cadoret, "Effect of phosphine decomposition on the growth and substrate heating of (100) InP in the hydride method," J. Cryst. Growth, vol. 83, pp. 279-285, 1987.
29. M. Harrous, L. Chaput, A. Bendraoui, M. Cadoret, C. Pariset, and R. Cadoret, "Phosphine and arsine decomposition in CVD reactors for InP and InGaAs growth," J. Cryst. Growth, vol. 92, pp. 423-431, 1988.
30. 1-x As on InP(100) by hydride vapor phase epitaxy," Thin Solid Films, vol. 192, pp. 343-350, 1990.
31. L. Chaput, R. Cadoret, and M. Mihailovic, "Experimental and theoretical study of InP homoepitaxy by chemical vapor deposition from gaseous indium chloride and hydrogen diluted phosphine," J. Cryst. Growth, vol. 112, pp. 691-698, 1991.
32. E. Gil-Lafon, N. Piffault, R. Cadoret, "Kinetic expression and study of the growth rate of mismatched (Ga,In)As/InP structures grown by hydride vapor phase epitaxy," J. Cryst. Growth, vol. 151, pp. 80-90, 1995.
33. 3 pyrolysis on the morphology and growth rate of InP grown by hydride vapor phase epitaxy," J. Electrochem. Soc., vol. 134, pp. 470-474, 1987.
34. N. Gopalakrishnan, R. S. Qhalid Fareed, and R. Dhanasekaran, "Epitaxial nucleation and growth mechanism of III-V compound semiconductors," J. Indian Inst. Sci., vol. 76, pp. 223-233, 1996.
35. V. S. Ban, "Mass spectrometric studies of vapor phase crystal growth," J. Electrochem. Soc., vol. 118, pp. 1473-1478, 1971.
36. R. F. Karlicek, B. Hammarlund, and J. Ginocchio, "UV absorption spectroscopy for monitoring hydride vapor-phase epitaxy of InGaAsP alloys," J. Appl. Phys., vol. 60, pp. 794-799, 1986.
37. F. Defoort, "Etude thermodynamique et expérimentale du dépôt chimique en phase vapeur du phophure d'indium," Doctoral thesis, Inst. National Polytechnique de Grenoble, Grenoble, France, 1986.
38. M. Deschler, K. Grüter, A. Schlegel, R. Beccard, H. Jürgensen, and P. Balk, "Very rapid growth of high quality GaAs, InP and related III-V compounds," J. de Physique, vol. 49, no. C4, pp. 689-692, 1988.
39. 2 ambient," J. Cryst. Growth, vol. 128, pp. 516-520, 1993.
40. R. A. Metzger and M. Meyer, "Rectifiers: A new application for GaAs,Compound Semiconductor, pp. 12-15, July/Aug. 1996.
41. F. A. Kish, D. A. Vanderwater, D. C. DeFevere, D. A. Steigerwald, G. E. Hofler, K. G. Park, and F. M. Steranka, "Highly reliable and efficient semiconductor wafer-bonded AlGalnP/GaP light-emitting diodes," Electron. Lett., vol. 32, pp. 132-134, 1996.
42. 0.47As/InP grown by hydride vapor phase epitaxy in a multiple chamber reactor," Appl. Phys. Lett., vol. 43, pp. 906-908, 1983.
43. J. Komeno, K. Kodama, and M. Ozeki, "InGaAsTInP superlattice grown by vapor-phase epitaxy and its applications," in Extended Abst. 16th Int. Conf. Solid State Devices and Materials, Kobe, Japan, 1984, pp. 567-570.
44. K. W. Wang, V. D. Mattera, K. Tai, S. N. G. Chu, D. D. Roccasecca, L. Luther, and G. Livescusecca, "InGaAs/InP multiquantum well structures grown by trichloride vapor phas epitaxy," in Proc. Mater. Res. Soc. Symp., vol. 145, pp. 85-90, 1989.
45. H. Banvillet, E. Gil, A. M. Vasson, R. Cadoret, A. Tabata, T. Benyattou, and G. Guillot, "Epitaxial growth and photoluminescence investigations of InP/InAs quantum well grown by hydride vapor phase epitaxy," in SPIE - Physical Concepts for Novel Optoelectronic Device Applications 1, 1990, vol. 1361, pp. 972-979.
46. O. Mizuno and H. Watanabe, "Semi-insulating properties of Fe-doped InP," Electron. Lett., vol. 11, pp. 118-119, 1975.
47. C. D. Brandt, A. M. Hennel, L. M. Pawlowicz, Y.-T. Wu, T. Bryskiewicz, J. Lagowski, and H. C. Gatos, "New semi-insulating InP: Titanium midgap donors," Appl. Phys. Lett., vol. 48, pp. 1162-1164, 1986.
48. J. A. Long, V. G. Riggs, and W. D. Johnston, Jr., "Growth of Fe-doped semi-insulating InP by MOCVD," J. Cryst. Growth, vol. 69, pp. 10-14, 1984.
49. K. Tanaka, K. Nakai, O. Aoki, M. Sugawara, K. Wakao, and S. Yamakoshi, "Fe-doped semi-insulating InP grown by chloride vaporphase epitaxy," J. Appl. Phys., vol. 61, pp. 4698-4700, 1985.
50. R. F. Karlicek, Jr., "The growth of iron doped semi-insulating InP by hydride vapor phase epitaxy in a nitrogen ambient," J. Cryst. Growth, vol. 91, pp. 33-38, 1988.
51. 2 carrier gas mixed hydride vapor phase epitaxy," J. Cryst. Growth, vol. 96, pp. 7-12, 1989.
52. S. Lourdudoss, B. Hammarlund, and O. Kjebon, "An Investigation on hydride VPE growth and properties of semi-insulating InP:Fe," J. Electron. Mater., vol. 19, pp. 981-987, 1990.
53. 2 carrier gas mixed chloride vapor phase epitaxy," in 3rd Int. Conf. Indium Phosphide and Related Materials, Cardiff, U.K., 1991, pp. 89-92.
54. R. Beccard, S. Beuven, K. Heime, R. Schmald, H. Jürgensen, P. Harde, and M. Schlak, "Growth of semi-insulating InP:Fe in the low pressure hydride VPE system," J. Cryst. Growth, vol. 121, pp. 373-380, 1992.
55. G. Hirt, D. Hofmann, F. Mosel, N. Schäfer, and G. Müller, "Compensation mechanisms in nominally undoped semi-insulating InP and comparison with undoped InP grown under stoichiometry control," J. Electron. Mater., vol. 20, pp. 1065-1068, 1991.
56. C. Rigo, C. Cacciatore, D. Campi, C. Coriasso, D. Soldani, and A. Stano, "Growth and Realization of InGaAs/InP and InGaAsPTInGaAsP quantum photonic devices grown by chemical beam epitaxy," Mater. Sci. Forum, vol. 203, pp. 109-114, 1996.
57. 2+ in InP," presented at the Ninth Int. Conf. InP and Related Materials, Hyannis, MA, 1997.
58. K. Nakai, O. Ueda, T. Odagawa, T. Takanohashi, and S. Yamakoshi, "Epitaxial growth and characteristics of Fe-doped InP by MOCVD," in Inst. Phys. Conf. Ser., 1987, no. 91, ch. 3, pp. 199-202..
59. M. Luysberg, R. Göbel, and H. Janning, "FeP precipitates in hydridevapor phase epitaxially grown InP:Fe," J. Vac. Sci. Technol. B, vol. 12, pp. 2305-2309, 1994.
60. M. A. Lampert and P. Mark, Current Injection in Solids. New York: Academic, 1970.
61. M. Sugawara, O. Aoki, N. Nakai, K. Tanaka, A. Yamaguchi, and K. Nakajima, "I-V characteristics of semi-insulating InP epitaxial layers: application to buried structures," in Semi-Insulating III-V Mater., Ohmsta, Ltd, 1986, pp. 597-602.
62. P. Speier, P. Wiedemann, W. Kuebart, H. Grosskofpf, F. Grotjahn, F. Schuler, F. J. Tegude, and K. Wünstel, "Semi-insulating Fe-doped InP layers grown by MOVPE," in 5th Conf. Semi-Insulating III-V Materials, Malmö, Sweden, 1988, pp. 295-300.
63. K. Turki, G. Picoli, and J. E. Viallet, "Non-linear behavior of InP:Fe under high electric field," in 5th Int. Conf. Indium Phosphide and Related Materials, Paris, France, 1993, 321-324.
64. P. Corvini, "Current injection in semi-insulating indium phosphide," Ph.D. dissertation, ECE Tech. Rep. #95-26, Univ. of California at Santa Barbara, Santa Barbara, CA, 1995.
65. S. Iyer, A. T. Macrander, R. F. Karlicek, Jr., and S. Lau, "Semi-insulating properties of Fe-doped InP grown by hydride vapor phase epitaxy," J. Appl. Phys., vol. 66, pp. 5880, 5884, 1989.
66. D. C. Look, Y. He, J. Ramdani, N. El-Masry, and S. M. Bedair, "Semi-insulating nature of gas source molecular beam epitaxial InGaP grown at very low temperatures," Appl. Phys. Lett., vol. 63, pp. 1231-1233. 1993.
67. 0.51P," Jpn. J. Appl. Phys., vol. 26, pp. 1194-1195, 1987.
68. xP epitaxial layers," Phys. Statist. Sol. (A), vol. 108, pp. 631-636, 1988.
69. S. Lourdudoss, R. Holz, O. Kjebon, and G. Landgren, "Iron doped GaInP for selective regrowth around GaAs mesas," J. Cryst. Growth, vol. 154, pp. 410-414, 1995.
70. S. Lourdudoss and R. Holz, "Fabrication and I-V-T behavior of n-GaAs/semi-insulating GaInP:Fe/n-GaAs structures," J. Cryst. Growth, vol. 179, pp. 371-381, 1997.
71. D. W. Shaw, "Selective epitaxial deposition of gallium arsenide in holes," J. Electrochem. Soc., vol. 113, pp. 904-908, 1966.
72. N. Nordell, "Metalorganic vapor phase epitaxy for advanced III-V devices," doctoral dissertation, Fac. of Elect. Eng., Roy. Inst. of Technol., Stockholm, Sweden, 1993.
73. K. Nakai, T. Sanada, and S. Yamakoshi, "Planar selective growth of InP by MOVPE," J. Cryst. Growth, vol. 93, pp. 248-253, 1988.
74. B. Garrett and E. J. Thrush, "Temporally resolved growth habit studies of InP/(InGa)As heterostructures grown by MOCVD on contoured InP substrates," J. Cryst. Growth, vol. 97, pp. 273-284, 1989.
75. J. L. Zilko, B. P. Segner, U. K. Chakrabarti, R. S. Logan, J. Lopata, D. L. Van Haren, J. A. Long, and V. R. McCrary, "Effect of mesa shape on the planarity of InP regrowths performed by atmospheric pressure and low pressure selective metalorganic vapor phase epitaxy," J. Cryst. Growth, vol. 109, pp. 264-271, 1991.
76. B.-T. Lee, R. A. Logan, and S. N. G. Chu, "Observation of growth pattern during atmospheric pressure metalorganic vapor phase epitaxy regrowth of InP around etched mesas," J. Cryst. Growth, vol. 130, pp. 287-294, 1993.
77. S. Lourdudoss, K. Streubel, J. Wallin, J. André, O. Kjebon, and G. Landgren, "Very rapid and selective epitaxy of InP around mesas of height up to 14 μm by hydride vapor phase epitaxy," in 6th Int. Conf. Indium Phosphide and Related Materials, Santa Barbara, CA, 1994, pp. 615-618.
78. S. Lourdudoss, E. Rodríguez Messmer, O. Kjebon, K. Streubel, J. André and G. Landgren, "Morphological modifications during selective growth of InP around cylindrical and parallelepiped mesas," Mater. Sci. Eng., vol. B28, pp. 179-182, 1994.
79. T. F. Kuech, M. A. Tischler, and R. Potemski, "Selective epitaxy in the conventional metalorganic vapor phase epitaxy," Appl. Phys. Lett., vol. 54, pp. 910-912, 1989.
80. K. Yamaguchi and K. Okamoto, "Selective epitaxial growth of AlGaAs by Atmospheric Pressure-MOCVD using diethylgalliumchloride and diethylaluminumchloride," Jpn. J. Appl. Phys., vol. 29, pp. 1408-1414, 1990.
81. 4 addition on InP crystal shapes," J. Cryst. Growth, vol. 125, pp. 597-611, 1992.
82. R. Azoulay, L. Dugrand, A. Izrael, E. V. K. Rao, R. Mellet, and A. M. Pougnet, "Selective growth of GaAs and GaAIAs by CI-Assisted OMVPE at atmospheric pressure," J. Electon. Mater., vol. 21, pp. 281-288, 1992.
83. R. F. Karlicek, Jr., D. L. Coblentz, R. A. Logan, T. R. Hayes, R. Pawelek, and E. K. Byrne, "A modified metalorganic chemical vapor depostion chemistry for improved selective area growth," J. Cryst. Growth, vol. 131, pp. 204-208, 1993.
84. R. W. Glew, J. P. Stagg, P. D. Greene, A. T. R. Briggs, S. Brudshaw, and J. H. Marsh, "Thermal instability of InGaAs/lnGaAsP quantum wells," in 3rd Int. Conf. Indium Phosphide and Related Materials, Cardiff, U.K., 1991, pp. 515-518.
85. M. Hoshino, K. Tanaka, J. Komeno, K. Kitahara, K. Kodoma, and M. Ozeki, "Selective growth of InP buried structure by chloride vapor phase epitaxy," Appl. Phys. Lett., vol. 48, pp. 186-188, 1986.
86. R. F. Karlicek, Jr., B. P. Segner, J. D. Wynn, A. J. Becker, U. K. Chakrabarti, and R. A. Logan, "Regrowth of semi-insulating InP around etched mesas using hydride vapor phase epitaxy," J. Electrochem. Soc., vol. 137, pp. 2639-2642, 1990.
87. S. Lourdudoss and O. Kjebon, "Hydride vapor phase epitaxial regrowth of SI-InP:Fe on nonplanar surfaces for device fabrication," in Semi-insulating III-V Materials, C. J. Milner, W. Ford, and E. R. Weber, Eds. Bristol, U.K.: IOP, 1992, pp. 131-134.
88. O. Kjebon, S. Lourdudoss, and J. Wallin, "Regrowth of semi-insulating iron doped InP around reactive ion etched laser mesas in (110) and (-110) directions by hydride vapor phase epitaxy," in 4th Int. Conf. InP and Related Materials, Newport, RI, 1992, p. 48-50.
89. R. Göbel, H. Janning, and H. Burkhard, "S.I. InPiFe hydride-VPE for mushroom type lasers," in Semi-Insulating III-V Materials, C. J. Milner, W. Ford, and E. R. Weber, Eds. Bristol, U.K.: IOP, 1992, pp. 125-130.
90. R. Göbel, F. Steinhagen, and H. Janning, "Hydride-VPE embedding of InAlGaAs laser structures with SI InP:Fe," Mater. Sci. Eng., vol. B35, pp. 59-63, 1995.
91. D. W. Shaw, "Morphology analysis in localized crystal growth and dissolution," J. Cryst. Growth, vol. 47, pp. 509-517, 1979.
92. P. Vohl, C. O. Bozler, R. W. McClelland, A. Chu, and A. J. Strauss, "Lateral growth of single-crystal InP over dielectric films by orientation-dependent VPE," J. Cryst. Growth, vol. 56, pp. 410-422, 1982.
93. H. C. Gatos, "Crystalline structure and surface reactivity," Sci., vol 137, pp. 311-322, 1962.
94. R. C. Sangster, "Model studies of crystal growth phenomenon in the III-V semiconducting compounds," in Compound Semiconductors, R. K. Willardson and H. L. Goering, Eds. New York: Reinhold, 1962, vol. 1, ch. 28.
95. H. Asai, "Anisotropical lateral growth in GaAs in MOCVD layers on (001) substrates," J. Cryst. Growth, vol. 80, pp. 425-433, 1987.
96. R. Beccard, S. Willems, A. Dehe, and K. Heime, "Planarizing regrowth of InP using a low pressure hydride VPE system," in 5th Int. Conf. Indium Phosphide and Related Materials, Paris, France, 1993, pp. 56-59.
97. B. Hammarlund, O. Kjebon, and S. Lourdudoss, "Planar and selective regrowth of semi-insulating InP:Fe by hydride VPE in nitrogen ambient," in Crystal Properties and Preparation, E. Lendvay, Ed. Zürich, Switzerland: Trans Tech, vol. 32-34, pp. 429-433, 1991.
98. B. Hammarlund, S. Lourdudoss, and O. Kjebon, "Orientation dependent growth behavior during hydride VPE regrowth of InP:Fe around reactive ion etched mesas," J. Electron. Mater., vol. 20, pp. 523-528, 1991.
99. S. Lourdudoss, E. Rodríguez Messmer, O. Kjebon, and G. Landgren, "Temporally resolved selective regrowth of InP around [110] and [110] mesas," J. Electron. Mat., vol. 25, pp. 389-394, 1996.
100. S. Lourdudoss, E. Rodríguez Messmer, O. Kjebon, and G. Landgren, "Temporally resolved regrowth of InP," J. Cryst. Growth, vol. 152, pp. 105-114, 1995.
101. R. Göbel, H. Janning, and H. Burkhard, "Fe distribution around hydride VPE InP:Fe regrown laser stripes," accepted for presentation at 9th Int. Conf. InP and Related Materials, Hyannis, MA, 1997; also private communication.
102. D. Pribat, B. Gerard, M. Dupuy, and P. Legagneux, "High quality GaAs on Si by conformal growth," Appl. Phys. Lett., vol. 60, pp. 2144-2146, 1992.
103. O. Parillaud, N. Piffault, E. Gil-Lafon, and R. Cadoret, "Defect free InP films on Si substrates obtained by hydride vapor phase conformal growth," in 6th Int. Conf. Indium Phosphide and Related Materials, Santa Barbara, CA, 1994, pp. 547-550.
104. O. Parillaud, E. Gil-Lafon, B. Gérard, P. Etienne, and D. Pribat, "High quality InP on Si by conformal growth," Appl. Phys. Lett., vol. 68, pp. 2654-2656, 1996.
105. O. Kjebon, S. Lourdudoss, B. Hammarlund, S. Lindgren, M. Rask, P. Ojala, G. Landgren, and B. Broberg, "1.55 μm buried heterostructure laser via regrowth of semi-insulating InP:Fe around vertical mesas fabricated by reactive ion etching using methane and hydrogen," Appl. Phys. Lett., vol. 59, 253-255, 1991.
106. S. Lindgren, Henrik Åhlfeldt, O Kjebon, L. Bäcklin, L. Forssén C. Vieider, H. Elderstig, M. Svensson, L. Granlund, L. Andersson, B. Kerzar, B. Broberg, R. Schatz, E. Forzelius, and S. Nilsson, "24 GHz modulation bandwidth and passive alignment of flip-chip mounted DFB laser diodes," IEEE Photon. Technol. Lett., vol. 9, pp. 306-308, 1997.
107. O. Kjebon, R. Schatz, S. Lourdudoss, S. Nilsson, and B. Staalnacke, "Modulation response measurements and evaluation of MQW InGaAsP lasers of various designs, high-speed semiconductor laser sources," in Proc. SPIE, 1996, vol. 2684, pp. 138-152.
108. U. Öhlander, O. Kjebon, O. Sahlen, S. Lourdudoss, J. Wallin, K. Streubel, S. Nilsson, and L. Bäckbom, "Strain-compensated 1.55 μm DBR lasers for operation at high-speed with low drive current," in Semiconductor Lasers: Advanced Devices and Applications Topical Meet., Technical Dig. Ser., Keystone, CO, 1995, vol. 20, pp. MA2-1/5-7.
109. O. Kjebon, U. Öhlander, S. Lourdudoss, J. Wallin, K. Streubel, S. Nilsson, and T. Klinga, "Multi quantum well 1.55 μm DFB lasers with low threshold current, high resonance frequency and bandwidth at low current injection," in 14th Int. Semiconductor Laser Conf., Maui, HI, 1994, pp. 221-222.
110. O. Kjebon, R. Schatz, S. Lourdudoss, S. Nilsson, B. Stålnacke, and L. Bäckbom, "30 GHz direct modulation bandwidth in detuned loaded InGaAsP DBR lasers at 1.55 μm wavelength," Electron. Lett., vol. 33, pp. 488-489, 1997.
111. S. Lourdudoss, O. Kjebon, N. Nordell, and J. Borglind, "I-V behavior of p/SI-InP:Fe/n and p/n/SI-InP:Fe/n configurations related to leakage current in buried heterostructure lasers with current blocking SI-InP:Fe," in Semi-Insulating III-V Materials, C. J. Milner, W. Ford, and E. R. Weber, Eds. Bristol, U.K.: IOP, 1992, pp. 331-334.
112. S. Matsumoto, M. Fukuda, K. Sato, Y. Itaya, and M. Yamamoto, "Highly reliable 1.55 μm GaInAsP diodes buried with semi-insulating iron-doped InP," Electron. Lett., vol 30, pp. 1305-1306, 1994.
113. S. Lourdudoss, O. Kjebon, J. Wallin, and S. Lindgren, "High frequency GaInAsP/InP laser mesas in 〈-110〉 direction with thick semi-insulating InP:Fe," IEEE Photon. Technol. Lett., vol. 5, pp. 1119-1122, 1993.
114. T. Miyazawa, F. Kobayashi, and H. Mori, "Regrowth of semi-insulating iron doped InP around crossed laser mesas by hydride vapor phase epitaxy," in Seventh Int. Conf. InP and Related Materials, Sapporo, Hokkaido, Japan, 1995, pp. 283-286.
115. T. Kurokawa and K. Nonaka, "Simultaneous demultiplexing and wave-length conversion of NRZ optical signals using a side-injection-light-controlled bistable laser diode," in Semiconductor Lasers Advanced Devices and Applications, Keystone, CO, 1995, pp. 50-51.
116. U. Eriksson, P. Evaldsson, J. Wallin, B. Stålnacke, S. Lourdudoss, and B. Willén, "Vertical integration of an InGaAs/InP HBT and a 1.55 mm strained MQW p-substrate laser," Proc. Inst. Elect. Eng. - Optoelectron., vol. 143, pp. 107-109, 1996.
117. P. Evaldsson, U. Eriksson, B. Stålnacke. S. Lourdudoss, J. Wallin, O. Kjebon, and B. Willén, "Low threshold (1.7 mA) and high bandwidth (14 GHz) 1.55 μm p-substrate lasers using semi-insulating HVPE regrowth," Electron. Lett., vol. 31, pp. 2012-2014, 1995.
118. F. Alexandre, D. C. Nguyen, O. Paillard, R. Azoulay, M. Quillec, S. Bouchoule, G. Le Mestreallan, Y. Rafflé, Y. Le Bellego, S. Slempkes, M. Juhel, G. Le Roux, and E. V. K. Rao, "Low temperature (500 °C) planar regrowth of SI-InP by hydride VPE for optoelectronic application," presented at the Seventh Eur. Workshop MOVPE, Berlin, Germany, 1997.
119. V. S. Ban, G. C. Erickson, S. Mason, and G. H. Olsen, "Selective epitaxy of III-V compounds by low-temperture hydride VPE," J. Electrochem. Soc., vol. 137, pp. 2904-2908, 1990.
120. F. Steinhagen, H. Hillmer, R. Lösch, W. Schlapp, R. Göbel, E. Kuphal, H. L. Hartnagel, and H. Burkhard, "High-speed complex-coupled strain-compensated AlGaInAs/InP 1.5 μm DFB laser diodes," in Eighth Int. Conf. InP and Related Materials, Schwäbisch Gmund, Germany, 1996, pp. 777-780.
121. S. J. J. Teng, J. M. Ballingall, and F. J. Rosenbaum, "Vapor phase epitaxial growth and characterization of InP on GaAs," Appl. Phys. Lett., vol. 48, pp. 1217-1219, 1986.
122. x on germanium substrates and their opto-electronic properties," J. Cryst. Growth, vol. 24/25, pp. 249-252, 1974.
123. M. Tachikawa and M. Yamaguchi, "Film thickness dependence of dislocation density reduction in GaAs-on-Si substrates," Appl. Phys. Lett., vol. 56, 484-486, 1990.
124. M. Tachikawa and H. Mori, "Dislocation generation of GaAs on Si in the cooling stage," Appl. Phys. Lett., vol. 56, 2225-2227, 1990.
125. H. Mori, M. Tachikawa, M. Sugo, and Y. Itoh, "GaAs heteroepitaxy on an epitaxial Si surface with a low-temperature process," Appl. Phys. Lett., vol. 63, 1963-1965, 1993.
126. H. Mori and M. Tachikawa, "Epitaxial Si surface for GaAs heteroepitaxy," J. Cryst. Growth, vol. 143, pp. 349-353, 1994.
127. H. Mori, "InP heteroepitaxy on Si substrates in In-PH3-HCl-H2 systems," J. Cryst. Growth, vol. 140, pp. 291-298, 1994.
128. M. Sugo, H. Mori, Y. Ito, Y. Sakai, and M. Tachikawa, "1.5 μm long-wavelength multiple quantum well laser on a Si substrate," Jpn. J. Appl. Phys., vol. 30, no. 12B, pp. 3876-3878, 1991.
129. T. Yamada, M. Tachikawa, T. Sasaki, H. Mori, Y. Kadota, and M. Yamamoto, "Stable CW operation of 1.3 μm double-heterostructure laser heteroepitaxially grown on Si," Electron. Lett., vol. 31, pp. 455-457, 1995.
130. T. Sasaki, T. Enoki, M. Tachikawa, M. Sugo, and H. Mori, "Good performance of InAlAs/InGaAs metal-semiconductor-metal photodiodes heteroepitaxially grown on Si substrates," Appl. Phys. Lett., vol. 64, pp. 751-753, 1994.
131. H. Mori, M. Sugo, and Y. Itoh, "Heteroepitaxy of InP on Si substrates," Advanced Mater., vol. 5, pp. 208-209, 1993.
132. K. Streubel, "Status of long wavelength vertical cavity lasers," in Proc. 22nd Eur. Conf. Optical Communication, Oslo, Norway, 1996, vol. 2, pp. 2.89-2.96.
133. D. I. Babic, K. Streubel, R. P. Mirin, N. M. Margalit, J. E. Bowers, E. L. Hu, D. E. Mars, L. Yang, and K. Carey, "Room-temperature continuous-wave operation of 1.54-pm vertical-cavity lasers," IEEE Photon. Technol. Lett., vol. 7, pp. 1225-1227, 1995.
134. J. Piprek, H. Wenzel, H.-J. Wünsche, D. Braun, and F. Henneberger, "Modeling light vs. current characteristics of long-wavelength VCSEL's with various DBR materials," in SPIE: Physics and Simulation of Optoelectronic Devices III, M. A. Osinski and W. W. Chow, Eds., 1995, vol. 2399, pp. 605-616.
135. C. S. Hong, D. Kasemet, M. E. Kim, and R. A. Milano, "GaAlAs buried-heterostructure lasers grown by a two-step MOCVD process," Electron. Lett., vol. 19, pp. 759-760, 1983.
136. H. Narui and D. Imanishi, "Low threshld current 780 nm AIGaAs buried heterostructure lasers on ridged GaAs substrate aligned to [011], fabricated using single-step MOCVD," Electron. Lett., vol. 32, pp. 664-665, 1996.
137. Z. L. Liau, S. C. Palmateer, S. H. Groves, J. N. Walpole, and L. J. Missagiu, "Low-threshold InGaAs strained-layer uantum-well lasers (λ = 0.98 μm) with GaInP cladding layers and mass-transported buried heterostructure," Appl. Phys. Lett., vol. 60, pp. 6-8, 1992.
138. S. Ishikawa, K. Fukagai, H. Chida, T. Miyazaki, H. Fujii, and K. Endo, "0.98-1.02 μm strained JnGaAsM)GaAs double quantum-well high-power lasers with GaInP buried waveguides," IEEE J. Quantum Electron., vol. 29, pp. 1936-1942, 1993.
139. S. Lourdudoss, S. Ovtchinnikov, O. Kjebon, S. Nilsson, L. Bäckbom, T. Klinga, and R. Holz "Entirely aluminum free 905 nm wavelength buried heterostructure laser by reactive ion etching and semi-insulating GaInPrFe regrowth," IEEE Trans. Electron Devices, vol. 44, pp. 339-340, 1997.
140. R. Bergmann, A. Menschig, G. Lehr, P. Kübler, J. Hommel, R. Rudeloff, B. Henie, F. Sholz, and H. Schweizer, "Improvement of the quality of InGaAs/InP quantum wires due to epitaxial overgrowth," J. Vac. Sci. Technol., vol. B10, pp. 2893-2895, 1992.
141. O. Schilling, A. Forchel, A. Kohl, and S. Brittner, "Optical analysis of quantum confined Stark effect in overgrown InGaAs/InP quantum wires," J. Vac. Sci. Technol., vol. B11, pp. 2556-2559, 1993.
142. K. Kerkel, W. Braun, A. Forchel, S. Lourdudoss, W. Seifert, N. Carlsson, and L. Samuelson, "Optical characterization of InGaAs/InP quantum wire overgrowth by hydride VPE with InP," presented at the 9th Int. Conf. Indium Phosphide and Related Materials, Hyannis, MA, 1997.
143. 0.75As/InP quantum wire," submitted to Appl. Phys. Lett., 1997.
144. J. Ahopelto, A. A. Yamaguchi, K. Nishi, A. Usui, and H. Sakaki, "Nanoscale InP islands for quantum box structures by hydride vapor phase epitaxy," Jpn. J. Appl. Phys., vol. 32, pp. L-32-L35, 1993.
145. H. J. Lezec, J. Ahopelto, A. Usui, and Y. Ochiai, "Focused-ion-beam surface modification for selective growth of InP wires on GaAs," Jpn. J. Appl. Phys., vol. 32, pp. 6251-6257, 1993.
146. J. Ahopelto, H. Lezec, Y. Ochiai, A. Usui, and H. Sakaki, "Maskless InP wire formation on planar GaAs substrates," Appl. Phys. Lett., vol. 64, pp. 499-501, 1994.
147. J. Ahopelto, H. Lipsanen, M. Sopanen, T. Koljonen, and H. E.-M. Niemi, "Selective growth of InGaAs on nanoscale InP islands," Appl. Phys. Lett., vol. 65, pp. 1662-1664, 1994.
148. J. Ahopelto, M. Sopanen, H. Lipsanen, S. Lourdudoss, E. Rodriguez Messmer, E.Höfling, J. P. Reithmaier, A. Forchel, A. Petersson, and L. Samuelson, "Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs," Appl. Phys. Lett., vol. 70, no. 21, pp. 2828-2830, 1997.
149. 0.47As/InP p-i-n photodiodes with very high failure action energy," IEEE Electron Device Lett., vol. 9, pp. 217-219, 1988.
150. S. Rapp, K. Streubel, C. Dhollande, J. André, E. Rodríguez Messmer, and S. Lourdudoss, "InP:Fe semi-insulating regrown 1.55 μm vertical cavity lasers based on an integrated InP Bragg reflector," in OSA Trends in Optics and Photonics Ser., 1997, vol. 15, in press.