Morphological evolution during epitaxial lateral overgrowth of indium phosphide on silicon

Journal of Crystal Growth

Volumn 332, Issue 1, 2011, Pages 27-33

  Metaferia, Wondwosen ^a   Junesand, Carl ^a   Gau, Ming Horng ^a,b   Lo, Ikai ^b   Pozina, Galia ^c   Hultman, Lars ^c   Lourdudoss, Sebastian ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c LINKÖPING UNIVERSITY   (Sweden)

Author keywords

A1. Characterization; A1. Crystal morphology; A1. Defects; A3. Hydride vapor phase epitaxy; B2. Semiconductor IIIV materials

Indexed keywords

A1. CHARACTERIZATION; A1. CRYSTAL MORPHOLOGY; A1. DEFECTS; A3. HYDRIDE VAPOR PHASE EPITAXY; SEMICONDUCTOR III-V MATERIALS;

CATHODOLUMINESCENCE; COALESCENCE; DEFECTS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; INDIUM PHOSPHIDE; PHOTOMASKS; SILICON WAFERS; STACKING FAULTS; SURFACE DEFECTS; SURFACE ROUGHNESS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 80052330407     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.07.022     Document Type: Article

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