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Volumn 15, Issue 5, 2007, Pages 2315-2322

Integrated AlGaInAs-silicon evanescent racetrack laser and photodetector

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CONTINUOUS WAVE LASERS; PHOTODETECTORS; SILICON;

EID: 33847694728     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.15.002315     Document Type: Article
Times cited : (203)

References (21)
  • 1
    • 1342283117 scopus 로고    scopus 로고
    • The optical age of silicon
    • G. T. Reed, "The optical age of silicon." Nature 427, 615-618 (2004).
    • (2004) Nature , vol.427 , pp. 615-618
    • Reed, G.T.1
  • 5
    • 14344257465 scopus 로고    scopus 로고
    • A continuous-wave Raman silicon laser
    • H. Rong et al. "A continuous-wave Raman silicon laser." Nature 433, 725-728 (2005).
    • (2005) Nature , vol.433 , pp. 725-728
    • Rong, H.1
  • 6
    • 9144245707 scopus 로고    scopus 로고
    • Demonstration of a silicon Raman laser
    • O. Boyraz and B. Jalali, "Demonstration of a silicon Raman laser," Opt. Express 12, 5269 (2004).
    • (2004) Opt. Express , vol.12 , pp. 5269
    • Boyraz, O.1    Jalali, B.2
  • 7
    • 4644240421 scopus 로고    scopus 로고
    • Raman amplification in ultrasmall silicon-on-insulator wire waveguides
    • R. Espinola, J. Dadap, R. Osgood Jr., S. McNab, & Y. Vlasov, "Raman amplification in ultrasmall silicon-on-insulator wire waveguides." Opt. Express 12, 3713-3718 (2004)
    • (2004) Opt. Express , vol.12 , pp. 3713-3718
    • Espinola, R.1    Dadap, J.2    Osgood Jr., R.3    McNab, S.4    Vlasov, Y.5
  • 8
    • 33644689778 scopus 로고    scopus 로고
    • Optical gain & stimulated emission in periodic nanopatterned crystalline silicon
    • S. G. Cloutier, P. A. Kossyrev, & J. Xu, "Optical gain & stimulated emission in periodic nanopatterned crystalline silicon." Nature Materials 4, 887, (2005).
    • (2005) Nature Materials , vol.4 , pp. 887
    • Cloutier, S.G.1    Kossyrev, P.A.2    Xu, J.3
  • 10
    • 33646574983 scopus 로고    scopus 로고
    • Strained silicon as a new electro-optic material
    • R. S. Jacobsen, et al., "Strained silicon as a new electro-optic material," Nature 441, 199-202 (2006)
    • (2006) Nature , vol.441 , pp. 199-202
    • Jacobsen, R.S.1
  • 12
    • 6344247882 scopus 로고    scopus 로고
    • All-optical control of light on a silicon chip
    • V. R. Almeida, C. A. Barrios, R. R. Panepucci, M. Lipson, "All-optical control of light on a silicon chip," Nature 431, 1081-1084 (2004)
    • (2004) Nature , vol.431 , pp. 1081-1084
    • Almeida, V.R.1    Barrios, C.A.2    Panepucci, R.R.3    Lipson, M.4
  • 14
    • 0037370301 scopus 로고    scopus 로고
    • Electroluminescence properties of light emitting devices based on silicon nanocrystals
    • A. Irrera, et al., "Electroluminescence properties of light emitting devices based on silicon nanocrystals," Physica E 16, 395-399 (2003).
    • (2003) Physica E , vol.16 , pp. 395-399
    • Irrera, A.1
  • 15
    • 0000635576 scopus 로고    scopus 로고
    • Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode
    • B. Gelloz and N. Koshida, "Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode," J. Appl. Phys. 88, 4319-4324 (2000).
    • (2000) J. Appl. Phys , vol.88 , pp. 4319-4324
    • Gelloz, B.1    Koshida, N.2
  • 16
    • 0001392737 scopus 로고
    • A Room-temperature luminescence from Er3+-implanted semi-insulating polycrystalline silicon
    • S. Lombardo, et al. "A Room-temperature luminescence from Er3+-implanted semi-insulating polycrystalline silicon," Appl. Phys. Lett. 63, 1942-1944 (1993).
    • (1993) Appl. Phys. Lett , vol.63 , pp. 1942-1944
    • Lombardo, S.1
  • 17
    • 33846485496 scopus 로고    scopus 로고
    • Design of monolithically integrated GeSi electro-absorption modulators and photodetectors on a SOI platform
    • J. Liu, D. Pan, S. Jongthammanurak, K. Wada, L. C. Kimerling, and J. Michel, "Design of monolithically integrated GeSi electro-absorption modulators and photodetectors on a SOI platform, " Opt. Express 15, 623-628 (2007)
    • (2007) Opt. Express , vol.15 , pp. 623-628
    • Liu, J.1    Pan, D.2    Jongthammanurak, S.3    Wada, K.4    Kimerling, L.C.5    Michel, J.6
  • 20
    • 0036248656 scopus 로고    scopus 로고
    • Plasma-Assisted InP-to-Si Low Temperature Wafer Bonding
    • D. Pasquariello, et al. "Plasma-Assisted InP-to-Si Low Temperature Wafer Bonding," IEEE J. Sel. Top. Quantum Electron. 8, 118, (2002).
    • (2002) IEEE J. Sel. Top. Quantum Electron , vol.8 , pp. 118
    • Pasquariello, D.1
  • 21
    • 0035872977 scopus 로고    scopus 로고
    • Electrical isolation of n-type and p-type InP layers by proton bombardment
    • H. Boudinov, H. H. Tan, and C. Jagadish., "Electrical isolation of n-type and p-type InP layers by proton bombardment," J. Appl. Phys. 89-10, pp. 5343-5347, (2001)
    • (2001) J. Appl. Phys , vol.89 -10 , pp. 5343-5347
    • Boudinov, H.1    Tan, H.H.2    Jagadish, C.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.