Quantum-confined stark effect in Ge/SiGe quantum wells on Si

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 16, Issue 1, 2010, Pages 85-92

  Rong, Yiwen ^a   Ge, Yangsi ^a   Huo, Yijie ^a   Fiorentino, Marco ^b   Tan, Michael R T ^b   Kamins, Theodore I Ted ^a   Ochalski, Tomasz J ^c   Huyet, Guillaume ^d   Harris Jr , James S ^a  

^a STANFORD UNIVERSITY   (United States)

^b HEWLETT PACKARD LABORATORIES   (United States)

^c UNIVERSITY COLLEGE CORK   (Ireland)

^d Ireland   (Ireland)

Author keywords

Electroabsorption effect; Ge SiGe quantum wells; Germanium; Optical interconnections; Optical modulators; Quantum confined Stark effect (QCSE)

Indexed keywords

ELECTROABSORPTION MODULATORS; GERMANIUM; LIGHT MODULATORS; OPTICAL INTERCONNECTS; SI-GE ALLOYS; STARK EFFECT;

ELECTRO-ABSORPTION; ELECTRO-ABSORPTION EFFECTS; GE QUANTUM WELL; GE/SIGE QUANTUM WELLS; HIGH-SPEED MODULATOR; QUANTUM WELL STRUCTURES; QUANTUM-CONFINED STARK EFFECT; SI SUBSTRATES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 76949107339     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2009.2031502     Document Type: Article

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