Synthesis, stability range, and fundamental properties of Si-Ge-Sn semiconductors grown directly on Si(100) and Ge(100) platforms

Chemistry of Materials

Volumn 22, Issue 12, 2010, Pages 3779-3789

  Xie, Junqi ^a   Chizmeshya, Andrew V G ^a   Tolle, John ^a   Dcosta, Vijay R ^a   Menendez, Jose ^a   Kouvetakis, John ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING PROPERTY; COMPRESSIVE STRAIN; CONTACT LESS; DEVICE QUALITY; EXPERIMENTAL OBSERVATION; EXPERIMENTAL STUDIES; FIRST-PRINCIPLES; FUNDAMENTAL PROPERTIES; GE(100); HIGH-RESOLUTION X-RAY DIFFRACTION; IN-PLANE LATTICES; INDUSTRIAL SCALE UP; LATTICE MISFITS; LOW TEMPERATURES; MIXING ENTROPY; N-TYPE LAYERS; OPTICAL METHODS; OPTICAL RESPONSE; RUTHERFORD BACK-SCATTERING; SEMI-CONDUCTOR ALLOYS; SI(1 0 0); SOFT CHEMISTRY; STANNANE; STRAIN-FREE; TRISILANES; UNIT-CELL DIMENSIONS; VIA DENSITY;

CHEMICAL VAPOR DEPOSITION; DENSITY FUNCTIONAL THEORY; EDGE DISLOCATIONS; ELECTRON ENERGY LOSS SPECTROSCOPY; GERMANIUM; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LATTICE CONSTANTS; OPTICAL PROPERTIES; PHASE DIAGRAMS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON; SILICON WAFERS; SPECTROSCOPIC ANALYSIS; STRAIN; SYSTEM STABILITY; TIN; TIN ALLOYS; TRANSPORT PROPERTIES; X RAY DIFFRACTION;

SILICON ALLOYS;

EID: 77953646930     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm100915q     Document Type: Article

References (25)

1. Auth, C.; Buehler, M.; Cappellani, A.; Choi, C.; Ding, G.; Han, W.; Joshi, S.; McIntyre, B.; Prince, M.; Ranade, P.; Sanford, J.; Thomas, C. Intel Tech. J. 2008, 12, 77
2. Jalali, B.; Paniccia, M.; Reed, G. IEEE Microwave Magazine 2006, 7, 1440
3. Soref, R. IEEE J. 2006, 12, 1678
4. Ghani, T.; Armstrong, M.; Auth, C.; Bost, M.; Charvat, P.; Glass, G.; Hoffmann, T.; Johnson, K.; Kenyon, C.; Klaus, J.; McIntyre, B.; Mistry, K.; Murthy, A.; Sandford, J.; Silberstein, M.; Sivakumar, S.; Smith, P.; Zawadzki, K.; Thompson, S.; Bohr, M. Technical Digest-International Electron Devices Meeting 2003, p 978.
5. Kuo, Y.-H.; Lee, Y. K.; Yong, K.; Ge, Y.; Ren, S.; Roth, J. E.; Kamins, T. I.; Miller, D. A. B.; Harris, J. S. Nature 2005, 437 (7063) 1334
6. Pantelides, S. T.; Zollner, S. Silicon Germanium Carbon Alloys: Growth Properties and Applications; Taylor & Francis: New York, 2002; Vol. 15, p 538.
7. Kouvetakis, J.; Chizmeshya, A. V. G. J. Mater. Chem. 2007, 17, 1649
8. Bauer, M.; Taraci, J.; Tolle, J.; Chizmeshya, A. V. G.; Zollner, S.; Menendez, J.; Smith, D. J.; Kouvetakis, J. Appl. Phys. Lett. 2002, 81, 2992
9. DCosta, V. R.; Fang, Y.-Y.; Tolle, J.; Kouvetakis, J.; Menendez, J. Phys. Rev. Lett. 2009, 102 (10) 107403/1-4
10. Soref, R.; Kouvetakis, J.; Tolle, J.; Menendez, J.; DCosta, V. J. Mater. Sci. 2007, 22 (12) 3281-3291
11. Kouvetakis, J.; Menendez, J.; Chizmeshya, A. V. G. Annu. Rev. Mater. Res 2006, 36, 497-554
12. Fang, Y.-Y.; Xie, J.; Tolle, J.; Roucka, R.; DCosta, V. R.; Chizmeshya, A. V.G.; Menendez, J.; Kouvetakis, J. J. Am. Chem. Soc. 2008, 130 (47) 16095
13. Xie, J.; Tolle, J.; DCosta, V. R.; Chizmeshya, A. V. G.; Menéndez, J.; Kouvetakis, J. Appl. Phys. Lett. 2009, 95, 181909
14. Thomas, S. G.; Bauer, M.; Stephens, M.; Kouvetakis, J. Solid State Technol. 2009, 52 (4) 12
15. Tolle, J.; Chizmeshya, A. V. G.; Fang, Y.-Y.; Kouvetakis, J.; DCosta, V. R.; Hu, C.-W.; Menendez, J.; Tsong, I. S. T. Appl. Phys. Lett. 2006, 89 (23) 231924/1-231924/3
16. DCosta, V. R.; Fang, Y.-Y.; Mathews, J.; Roucka, R.; Tolle, J.; Menendez, J.; Kouvetakis, J. Semicond. Sci. Technol. 2009, 24 (11) 115006/1-115006/8
17. DCosta, V. R.; Cook, C. S.; Menendez, J.; Tolle, J.; Kouvetakis, J.; Zollner, S. Solid State Commun. 2006, 138, 309
18. DCosta, V. R.; Fang, Y. Y.; Tolle, J.; Kouvetakis, J.; Menéndez, J. Thin Solid Films 2010, 518 (9) 2531
19. DCosta, V. R.; Tolle, J.; Poweleit, C. D.; Kouvetakis, J.; Menendez, J. Phys. Rev. B 2007, 76, 035211
20. DCosta, V. R.; Cook, C. S.; Birdwell, A. G.; Littler, C. L.; Canonico, M.; Zollner, S.; Kouvetakis, J.; Menendez, J. Phys. Rev. B 2006, 73, 125207
21. Kresse, G.; Furthmuller, J. Phys. Rev. B 1996, 54, 11169
22. Kresse, G.; Hafner, J. J. Phys: Condens. Matter 1992, 6, 8245. 11169.
23. Chroneos, A.; Jiang, C.; Grimes, R. W.; Schwingenschlogl, U.; Bracht, H. Appl. Phys. Lett. 2009, 95, 112101
24. Ceperley, D. M.; Alder, B. J. Phys. Rev. Lett. 1980, 45, 566
25. Perdew, J. P.; Zunger, A. Phys. Rev. B 1981, 23, 5048