Reduced threshold current dilute nitride Ga(NAsP)/GaP quantum well lasers grown by MOVPE

Electronics Letters

Volumn 47, Issue 16, 2011, Pages 931-933

  Hossain, N ^a   Sweeney, S J ^a   Rogowsky, S ^b   Ostendorf, R ^b   Wagner, J ^b   Liebich, S ^c   Zimprich, M ^c   Volz, K ^c   Kunert, B ^d   Stolz, W ^c  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^c PHILIPPS UNIVERSITY MARBURG   (Germany)

^d NAsP III/V GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY LENGTH; CHARACTERISTIC TEMPERATURE; CMOS COMPATIBLE; DILUTE NITRIDES; ELECTRONIC CHIPS; GAP SUBSTRATES; LASING WAVELENGTH; MATERIAL SYSTEMS; METAL-ORGANIC VAPOUR PHASE EPITAXY; ROOM TEMPERATURE; TEMPERATURE REGIONS; THRESHOLD CURRENTS;

GALLIUM ALLOYS; NITRIDES; ORGANIC LASERS; ORGANOMETALLICS; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM WELL LASERS;

EID: 80053258720     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2011.1927     Document Type: Article

References (8)

1. Fang, S., F., Adomi, K., Iyer, S., Morkoc, H., Zabel, H., Choi, C., and Otsuka, N.: ' Gallium arsenide and other compound semiconductors on silicon ', J. Appl. Phys., 1990, 68, p. R31-R58 10.1063/1.346284 0021-8979
2. 1-x alloys lattice matched to Si ', Appl. Phys. Lett., 2004, 85, p. 6347-6349 10.1063/1.1839286 0003-6951
3. Kunert, B., Zinnkann, S., Volz, K., and Stolz, W.: ' Monolithic integration of Ga(NAsP)/(BGa)P multi-quantum well structure on (001) silicon substrate by MOVPE ', J. Cryst. Growth, 2008, 310, p. 4776-4779 10.1016/j.jcrysgro.2008.07.097 0022-0248
4. Kunert, B., Volz, K., Koch, J., and Stolz, W.: ' Novel direct band-gap Ga(NAsP)-material system pseudomorphically grown on GaP-substrate ', Appl. Phys. Lett., 2006, 88, p. 182108-182110 10.1063/1.2200758 0003-6951
5. Kunert, B., Klehr, A., Reinhard, S., Volz, K., and Stolz, W.: ' Near room temperature electrical injection lasing for dilute nitride Ga(NAsP)/GaP quantum-well structures grown by metal organic vapour phase epitaxy ', Electron. Lett., 2006, 42, p. 601-603 10.1049/el:20060295 0013-5194
6. Chamings, J., Adams, A.R., Sweeney, S.J., Kunert, B., Volz, K., and Stolz, W.: ' Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers ', Appl. Phys. Lett., 2008, 93, p. 101108-101110 10.1063/1.2975845 0003-6951
7. Kunert, B., Volz, K., Koch, J., and Stolz, W.: ' MOVPE growth condition of the novel direct band gap, dilute nitride Ga(NAsP) material system pseudomorphically strained on GaP-substrate ', J. Cryst. Growth, 2007, 298, p. 121-125 10.1016/j.jcrysgro.2006.10.013 0022-0248
8. Bückers, C., Hader, J., Moloney, J.V., and Koch, S.W.: ' Microscopic simulation of semiconductor laser devices ', Phys. Status Solidi C, 2011, DOI 10.1002pssc.201084137 10.1002/pssc.201084137 1610-1634