Advances in SiGeSn technology

Journal of Materials Research

Volumn 22, Issue 12, 2007, Pages 3281-3291

  Soref, Richard ^a   Kouvetakis, John ^b   Tolle, John ^b   Menendez, Jose ^b   D'Costa, Vijay ^b  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BINARY ALLOYS; CHEMICAL VAPOR DEPOSITION; ENERGY GAP; LIGHT REFLECTION; PHOTOLUMINESCENCE; SILICON WAFERS; SPECTROSCOPIC ELLIPSOMETRY; TERNARY ALLOYS;

BAND-GAP TRANSITION; HALL MEASUREMENTS; PHOTOREFLECTANCE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 37549050884     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2007.0415     Document Type: Article

References (16)

1. M.R. Bauer, J. Taraci, J. Tolle, A.V.G. Chizmeshya, S. Zollner, J. Menendez, D.J. Smith, and J. Kouvetakis: Ge-Sn semiconductors for band gap and lattice engineering. Appl. Phys. Lett. 81, 2992 (2002).
2. J. Kouvetakis, J. Menendez, and A.V.G. Chizmeshya: Tin-based group IV semiconductors: New platforms for opto- and micro-electronics on silicon. Annu. Rev. Mater. Res. 36, 497 (2006).
3. x alloys. Appl. Phys. Lett. 86, 191912 (2005).
4. M.R. Bauer, J. Kouvetakis, D.J. Smith, and J. Menendez: Tunable band structure in diamond-cubic tin-germanium alloys grown on silicon substrates. Solid State Commun. 127, 355 (2003).
5. x study. Phys. Rev. B: Solid State 73, 125207 (2006).
6. 3: Practical n-dopants for new group IV semiconductors. Chem. Mater. 18, 6266 (2006).
7. 1-x-y alloys. Appl. Phys. Lett. 84, 888 (2004).
8. J. Tolle, R. Roucka, V. D'Costa, J. Menendez, A. Chizmeshya, and J. Kouvetakis: Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon. Appl. Phys. Lett. 88(25), 252112 (2006).
9. J. Menendez, V.R. D'Costa, S.C. Cook, J. Menéndez, J. Tolle, J. Kouvetakis, and S. Zollner: Transferability of optical bowing parameters between binary and ternary group-IV alloys. Solid State Commun. 138(6), 309 (2006).
10. Y. Ishikawa, K. Wada, D.D. Cannon, J. Liu, H-C. Luan, and L.C. Kimerling: Strain-induced band gap shrinkage in Ge grown on Si substrates. Appl. Phys. Lett. 82, 2044 (2003).
11. y strained-layer heterostructures with a direct Ge bandgap. Appl. Phys. Lett. 85(7), 1175 (2004).
12. y buffered Si(100). Appl. Phys. Lett. 90, 061915 (2007).
13. R.A. Soref and L. Friedman: Direct gap Ge/GeSn/Si heterostructures. Superlattices Microstruct. 14(213), 189 (1993).
14. 1-y-z- buffered silicon, U.S. Patent No. 6 897 471 (2005).
15. 3: Metastable SiSn/GeSn/Si(100) heteroepitaxial structures. Appl. Phys. Lett. 89, 231924 (2006).
16. x alloys. J. Appl. Phys. 101, 013518 (2007).