Epitaxial lateral overgrowth of InP in micro line and submicro mesh openings

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2007, Pages 311-314

  Olsson, F ^a   Xie, M ^a   Gerard, F ^b   Alija, A R ^b   Prieto, I ^b   Postigo, P A ^b   Lourdudoss, S ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; PHOTOLUMINESCENCE; SILICON; TEMPERATURE MEASUREMENT;

EPITAXIAL LATERAL OVERGROWTH; SUBMICRO MESH STRUCTURES;

INDIUM PHOSPHIDE;

EID: 34748886143     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2007.381186     Document Type: Conference Paper

References (10)

1. G. Roelkens, J.Brouckaert, D.Taillaert, P.Dumon, W.Bogaerts, D. Van Thourhout, and R.Baets, Optics Express, 13, 10102 (2005).
2. J.M.Fedeli, S.Jeannot, M.Kostrzewa, L.Di Cioccio, V.Jousseaume, R.Orobtchouk, P.Maury, and M.Zussy, Proceedings of SPIE - The International Society for Optical Engineering, v 6180, Photonics, Devices and Systems III (2006).
3. A. W. Fang, H. Park, R. Jones, O. Cohen, M. J. Paniccia and J. E. Bowers, IEEE Photonics Technol. Lett, 18, 1143 (2006).
4. Y.Sun, S.Lourdudoss, M.Avella and J.Jiménez, "Sulfur-Doped Indium Phosphide on Silicon Substrate Grown by ELOG," Electrochemical and Solid-State Letters, vol. 7, nr. 11, pp. 0269-0271, 2004.
5. F. Olsson, A. Aubert, M. Avella, J. Jiménez, J. Berggren and S. Lourdudoss, "Heteroepitaxy of InP on silicon-on-insulator for optoelectronic integration", The 210th Electrochemical Societys Third International Symposium on Integrated Optoelectronics, Cancun, Mexico, 2006.
6. Y.Ujiie, T.Nishinaga, Epitaxial lateral overgrowth of GaAs on a Si substrate, Jap. J. of Appl. Phys., vol. 28 (3), pp. L337-339, 1989
7. Y.T. Sun, Epitaxial Lateral Overgrowth of Indium Phosphide and Its Application in Heteroepitaxy, PhD thesis Royal Institute of technology, Stockholm, Sweden, ISSN 1404-0379, Nov 2003
8. Y.T. Sun., E.Rodríguez Messmer, D.,Söderström, D.Jahan and S.Lourdudoss, "Selective Area Growth of InP in the Openings Off-Oriented From [110] Direction," J. Crystal Growth, vol. 225, pp. 9-15, 2001.
9. Z.Yan, Y.Hamaoka, S.Naritsuka and T.Nishinaga, "Coalescence in microchannel epitaxy of InP," J. Cryst. Growth, vol. 212, pp. 1-10, 2000.
10. D.Zubia and S.D.Hersee, "Nanoheteroepitaxy: The application of nanostructuring and substrate compliance to the heteroepitaxy of mismatched semiconductor materials," J. Appl. Phys., vol. 85, no. 9, pp. 6492-6496, 1999.