High-quality 150 mm InP-to-silicon epitaxial transfer for silicon photonic integrated circuits

Electrochemical and Solid-State Letters

Volumn 12, Issue 4, 2009, Pages

  Liang, D ^a   Bowers, J E ^a   Oakley, D C ^b   Napoleone, A ^b   Chapman, D C ^b   Chen, C L ^b   Juodawlkis, P W ^b   Raday, O ^c  

^a University of California   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c INTEL CORPORATION   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS; INTEGRATED OPTOELECTRONICS; LIGHT EMISSION; LUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SILICON WAFERS;

AS-GROWN; BONDING INTERFACES; DIODE LASERS; EPITAXIAL STRUCTURES; EPITAXIAL TRANSFERS; HIGH QUALITIES; HIGH RESOLUTIONS; INDUCED STRAINS; INP; MULTIPLE-QUANTUM WELLS; PL MEASUREMENTS; SILICON PHOTONICS; SILICON-ON-INSULATOR SUBSTRATES; STANDARD DEVIATIONS; VOID-FREE; WAVELENGTH SHIFTS; X-RAY DIFFRACTION MEASUREMENTS;

WAFER BONDING;

EID: 60449105541     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3065994     Document Type: Article

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