Design of a Si-based lattice-matched roomtemperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode

Optics Express

Volumn 18, Issue 19, 2010, Pages 19957-19965

  Sun, G ^a   Soref, R A ^b   Cheng, H H ^c  

^a UNIVERSITY OF MASSACHUSETTS BOSTON   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LIFETIME; COMPUTER SIMULATION; GERMANIUM; INFRARED DEVICES; INFRARED LASERS; LASERS; OPTICAL PARAMETRIC OSCILLATORS; QUANTUM WELL LASERS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; SILICON ALLOYS; TIN;

ACTIVE REGIONS; ALLOY COMPOSITIONS; AUGER PROCESS; BAND ALIGNMENTS; BAND OFFSETS; CMOS COMPATIBLE; DIRECT BAND GAP; GROUP-IV SEMICONDUCTORS; INJECTION LASER DIODES; LATTICE MATCH; LATTICE-MATCHED; MIDINFRARED; MIDINFRARED LASERS; MODAL GAIN; MODELING AND SIMULATION; MULTIPLE QUANTUM-WELL STRUCTURES; MULTIQUANTUM WELLS; OPTICAL CONFINEMENT; QUANTUM WELL; RADIATIVE PROCESS; ROOM TEMPERATURE; SI-BASED; SILICON SUBSTRATES; SILICON-BASED; STRAIN-FREE;

SEMICONDUCTOR QUANTUM WELLS;

SILICON;

ARTICLE; CHEMISTRY; COMPUTER AIDED DESIGN; DIODE LASER; EQUIPMENT; EQUIPMENT DESIGN; INFRARED RADIATION; TEMPERATURE;

COMPUTER-AIDED DESIGN; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; INFRARED RAYS; LASERS, SEMICONDUCTOR; SILICON; TEMPERATURE;

EID: 77956994927     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.18.019957     Document Type: Article

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