Growth of high quality InP layers in STI trenches on miscut Si (0 0 1) substrates

Journal of Crystal Growth

Volumn 315, Issue 1, 2011, Pages 32-36

  Wang, G ^a,b   Leys, M R ^a   Nguyen, N D ^a   Loo, R ^a   Brammertz, G ^a   Richard, O ^a   Bender, H ^a   Dekoster, J ^a   Meuris, M ^a   Heyns, M M ^a,b   Caymax, M ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

A3. Metalorganic vapor phase epitaxy; B1. Phosphides; B2. Semiconducting IIIV materials

Indexed keywords

B1. PHOSPHIDES; CRYSTAL DISTORTION; DEFECT FORMATION; EXTENDED DEFECT; HIGH DENSITY; HIGH GROWTH RATE; HIGH QUALITY; INP; METAL-ORGANIC VAPOR PHASE EPITAXY; MISCUT ANGLE; SELECTIVE AREAS; SEMI CONDUCTING III-V MATERIALS; SHALLOW TRENCH ISOLATION; SI(0 0 1); SIDE WALLS; SIGNIFICANT IMPACTS; STERIC HINDRANCE EFFECTS; TWIN FORMATION;

ASPECT RATIO; DEFECTS; EPITAXIAL GROWTH; GERMANIUM; METALLORGANIC VAPOR PHASE EPITAXY; PHOSPHORUS COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; VAPORS;

SEMICONDUCTING SILICON;

EID: 79551684091     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.07.039     Document Type: Article

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