Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si

Applied Physics Letters

Volumn 99, Issue 12, 2011, Pages

  Reboul, J R ^a   Cerutti, L ^a   Rodriguez, J B ^a   Grech, P ^a   Tourni, E ^a  

^a UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE OPERATION; EPITAXIALLY GROWN; EXPERIMENTAL SETUP; GASB-BASED LASERS; OUTPUT POWER; ROOM TEMPERATURE; SI SUBSTRATES;

DIODES; SEMICONDUCTING SILICON COMPOUNDS;

GALLIUM ALLOYS;

EID: 80053425483     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3644983     Document Type: Article

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