InP overgrowth on SiO2 for active photonic devices on silicon

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7606, Issue , 2010, Pages

  Junesand, Carl ^a   Wang, Zhechao ^a   Wosinski, Lech ^a   Lourdudoss, Sebastian ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Epitaxial lateral overgrowth; Hydride vapor phase epitaxy; InP; Monolithic integration; Silicon photonics

Indexed keywords

EPITAXIAL LATERAL OVERGROWTH; HYDRIDE VAPOR PHASE EPITAXY; INP; MONOLITHIC INTEGRATION; SILICON PHOTONICS;

AMPLIFICATION; CRYSTAL GROWTH; MONOLITHIC INTEGRATED CIRCUITS; PHOTONIC DEVICES; PHOTONICS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON OXIDES; SILICON WAFERS; VAPOR PHASE EPITAXY; VAPORS; WAFER BONDING; WAVEGUIDES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77951686688     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.841181     Document Type: Conference Paper

References (25)

1. M. Dainese, M. Swillo, L. Wosinski, L. Thylen, "Directional coupler wavelength selective filter based on dispersive Bragg reflection waveguide", Optics Communications 260, 514-521 (2006).
2. Q. Xu, S. Manipatruni, B. Schmidt, J. Shakya, and M. Lipson, "12.5 Gbit/s carrier-injection-based silicon microring silicon modulators", Opt. Express, Vol. 15, No. 2, 430-436 (2007).
3. Y.-H. Kuo, H.-W. Chen, and J. E. Bowers, "Hybrid Silicon Modulators", Proc. SPIE 7220, 72208 1-7 (2009).
4. H. Park, A. W. Fang, R. Jones, O. Cohen, O. Raday, M. N. Sysak, M. J. Paniccia, and J. E. Bowers, "A hybrid AlGaInAs-silicon evanescent waveguide photodetector", Opt. Express, Vol. 15, No. 10 Optics Express, 6044-6052 (2007).
5. T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, "31GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate", Opt. Express, Vol. 15, No. 2, 13965-13971 (2007).
6. Y. Kang, H.-D. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y.-H. Kuo, H.-W. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng and J. C. Campbell, "Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product", Nature Photonics, Vol. 3, 59-63 (2009).
7. Boyraz, O., and B. Jalali, "Demonstration of a silicon Raman laser", Opt. Express, 12 (21) 5269-5273 (2004).
8. Liu, A., H. Rong, M. Paniccia, O. Cohen, and D. Hak, "Net optical gain in a low loss silicon-on-insulator waveguide by stimulated Raman scattering", Opt. Express, 12 (18) 4261-4268 (2004).
9. D. Liang, M. Fiorentino, T. Okumura, H.-H. Chang D. T. Spencer, Y.-H. Kuo, A. W. Fang, D. Dai, R. G. Beausoleil, and J. E. Bowers, "Electrically-pumped compact hybrid silicon microring lasers for optical interconnects", Opt. Express, Vol. 17, No. 22, 20355 (2009)
10. A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, "Electrically pumped hybrid AlGaInAs-silicon evanescent laser", Opt. Express, Vol. 14, No. 20, 9203 (2006)
11. R. G. Beausoleil, P. J. Kuekes, G. S. Snider, S.-Y. Wang and R. S. Williams, "Nanoelectronic and Nanophotonic Interconnect", Proc. IEEE, Vol. 96 ( 2) (2008)
12. B. Jalali, "Can silicon change photonics?", Phys. stat. sol. (a) 205, No. 2, 213-224 (2008)
13. J.M. Fedeli, J. Marti, D. Van Thourhout, G. Reed, T. White, "Silicon Photonics Developments in Europe", Proc. SPIE 7220 72200A 1-12
14. B. Jalali, "Silicon Photonics", Journal of ligthwave technology, Vol. 24, No. 12, (2006)
15. M. Aoki, M. Suzuki, H. Sano, T. Kawano, T. Ido, T. Taniwatari, K. Uomi, A. Takai, IEEE J. Quantum Electron., "InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD," vol. 29, no. 6, pp. 2088 (1993).
16. S. Lourdudoss, K. Streubel, J. Wallina, J. Andria, O. Kjebon and G. Landgren, "Very rapid and selective epitaxy of InP around mesas of height up to 14 μ m by hydride vapor phase epitaxy", IEEE Journal of Selected Topics in Quantum Electronics, 3(3) 749-767 (1997).
17. M. Gibbon, J. P. Stagg, C. G. Cureton, E. J. Thrust, C. J. Jones, R. E. Mallard, R. E. Pritchards, N. Collis and A. Chew, "Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates", Semicond. Sci. Technol., vol. 8, no. 6, pp. 998 (1993).
18. Y. T. Sun, E. R. Messmer, D. Söderström, D. Jahan and S. Lourdudoss, "Temporally resolved selective area growth of InP in the openings off-oriented from [110] direction", J. Cryst. Growth, 225, 9-15 (2001).
19. C. Junesand et al., "Surface morphology of indium phosphide grown on silicon by nano-epitaxial lateral overgrowth", Phys. Stat. Sol., Vol 6 12, pp. 2785-2788 (2009).
20. J. M. Titchmarsh, W. Harding, G. R. Booker, & D. R. Wight, "Carrier recombination at dislocations in epitaxial gallium phosphide layers" J. Mater. Sci., 12, 341 (1977).
21. T.C. Wen, W.I. Lee, J.K. Sheu and G.C. Chi, "Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching" Solid-State Electron., 46 p., 555 (2002).
22. Z. Yan, Y. Hamaoka, S. Naritsuka and T. Nishinaga, "Coalescence in microchannel epitaxy of InP", J. Cryst. Growth 212, p. 1 (2000).
23. S. Dogan, S. Tüzemen, "Direct recognition of non-radiative recombination centers in semi-insulating LEC InP:Fe using double excitation photoluminescence", Journal of Luminescence, Volume 128, Issue 2, p. 232-238 (2008).
24. S.G. Bishop. In: S. Pantelides, Editor, Deep Centers in Semiconductors, Gordon & Breach, New York p. 541 (1986).
25. M. Goldberg",*, A. Trukhinb, H.-J. Fitting, "Dose effects of cathodoluminescence in SiOz layers on Si", Materials Science and Engineering, B42, 293-296 (1996).