III-Vs on Si for photonic applications - A monolithic approach

Materials Science and Engineering: B

Volumn 177, Issue 17, 2012, Pages 1551-1557

  Wang, Zhechao ^a   Junesand, Carl ^a   Metaferia, Wondwosen ^a   Hu, Chen ^a   Wosinski, Lech ^a   Lourdudoss, Sebastian ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Epitaxial lateral overgrowth; Evanescently coupled silicon laser; Heteroepitaxy; Monolithic integration; Semiconductor laser; Silicon photonics

Indexed keywords

DEFECTS; EPITAXIAL GROWTH; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; INTEGRATION; OPTICAL WAVEGUIDES; PHOTONIC DEVICES; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR LASERS; SILICA; SILICON OXIDES; SILICON WAFERS; STRUCTURAL DESIGN; WAFER BONDING;

EPITAXIAL LATERAL OVERGROWTH; EVANESCENTLY COUPLED SILICON LASERS; HIGH VOLUMES; MONOLITHIC APPROACH; MONOLITHIC INTEGRATION; MONOLITHICS; PHOTONIC APPLICATION; SILICON PHOTONICS; WAFER DIES; WAFER TO WAFER BONDING;

SILICON PHOTONICS;

EID: 84866354328     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2011.12.006     Document Type: Conference Paper

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