3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates

Optics Express

Volumn 19, Issue 12, 2011, Pages 11381-11386

  Wang, Ting ^a   Liu, Huiyun ^a   Lee, Andrew ^a   Pozzi, Francesca ^a   Seeds, Alwyn ^a  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SILICON; SUBSTRATES;

BROAD-AREA LASERS; ELECTRICALLY PUMPED; EPITAXIALLY GROWN; GAAS; INAS/GAAS; LASER STRUCTURES; NUCLEATION LAYERS; OUTPUT POWER; ROOM TEMPERATURE; SI (100) SUBSTRATE; SI SUBSTRATES;

QUANTUM DOT LASERS;

EID: 79958188548     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.011381     Document Type: Article

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