Optimization of initial growth in low-angle incidence microchannel epitaxy of GaAs on (0 0 1) GaAs substrates

Journal of Crystal Growth

Volumn 310, Issue 7-9, 2008, Pages 1571-1575

  Naritsuka, S ^a   Matsuoka, S ^a,a   Yamashita, Y ^a   Yamamoto, Y ^a   Maruyama, T ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

A3. Molecular beam epitaxy; A3. Selective epitaxy; B1. Gallium compounds; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL ORIENTATION; EVAPORATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH; SUBSTRATES;

LOW ANGLE INCIDENCE MICROCHANNEL EPITAXY; SELECTIVE EPITAXY; SEMICONDUCTING III-V MATERIALS; SURFACE MIGRATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 41449096400     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.117     Document Type: Article

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