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Volumn 20, Issue 9, 2005, Pages 961-965

Properties of InGaAsN heterostructures emitting at 1.3-1.55 νm

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT EMISSION; MOLECULAR BEAM EPITAXY; QUANTUM ELECTRONICS; SEMICONDUCTING INDIUM COMPOUNDS; SUPERLATTICES;

EID: 23944509142     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/9/013     Document Type: Article
Times cited : (10)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.