Selective area growth of high quality InP on Si (001) substrates

Applied Physics Letters

Volumn 97, Issue 12, 2010, Pages

  Wang, G ^a,b   Leys, M R ^a   Loo, R ^a   Richard, O ^a   Bender, H ^a   Waldron, N ^a   Brammertz, G ^a   Dekoster, J ^a   Wang, W ^a   Seefeldt, M ^b   Caymax, M ^a   Heyns, M M ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIPHASE BOUNDARIES; ANTIPHASE DOMAIN BOUNDARY; ATOMIC STEP; DEFECT-FREE; DENSITY CONTROL; GE SURFACES; HIGH QUALITY; INP; SELECTIVE AREA GROWTH; SI (001) SUBSTRATE; SI SUBSTRATES; SUBMICRON;

BUFFER LAYERS; DEFECTS; SILICON;

GERMANIUM;

EID: 77957114254     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3491554     Document Type: Article

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