Electrical transport mechanisms in three dimensional ensembles of silicon quantum dots

Journal of Applied Physics

Volumn 110, Issue 6, 2011, Pages

  Balberg, I ^a  

^a HEBREW UNIVERSITY OF JERUSALEM   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB BLOCKADE EFFECTS; DECONFINEMENT; DENSITY RANGE; DISORDERED NETWORKS; DISORDERED SEMICONDUCTORS; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL MEASUREMENT; ELECTRICAL TRANSPORT MECHANISMS; HIGH DENSITY; INSULATING MATRIX; LOW DENSITY; SEMICONDUCTOR QDS; SI NANOCRYSTALLITES; SI QUANTUM DOT; SILICON QUANTUM DOTS; TRANSPORT MECHANISM;

CARRIER CONCENTRATION; ELECTRIC PROPERTIES; GERMANIUM; OPTICAL PROPERTIES; QUANTUM CHEMISTRY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SOLVENTS; THREE DIMENSIONAL;

SEMICONDUCTOR QUANTUM DOTS;

EID: 80053495509     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3637636     Document Type: Review

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