Carrier transport across a few grain boundaries in highly doped polycrystalline silicon

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 6 B, 2001, Pages

  Furuta, Yoshikazu ^a,d   Mizuta, Hiroshi ^a,d   Nakazato, Kazuo ^a,d   Tan, Yong T ^b,d   Kamiya, Toshio ^b,d   Durrani, Zahid A K ^b,d   Ahmed, Haroon ^b,d   Taniguchi, Kenji ^c  

^a HITACHI CAMBRIDGE LABORATORY   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c OSAKA UNIVERSITY   (Japan)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Electron transport; Grain boundary; Intergrain; Point contact device; Polycrystalline silicon; Potential barrier height

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; ELECTRON TRANSPORT PROPERTIES; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; SEMICONDUCTOR DOPING; STATIC RANDOM ACCESS STORAGE; THIN FILMS;

POINT-CONTACT DEVICES; POTENTIAL BARRIER HEIGHT;

POLYSILICON;

EID: 0035874856     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l615     Document Type: Article

References (9)