Sensitization of the electron lifetime in a-Si:H: The story of oxygen

Physical Review B - Condensed Matter and Materials Physics

Volumn 63, Issue 11, 2001, Pages

  Balberg, I ^a   Naidis, R ^a   Fonseca, L F ^b   Weisz, S Z ^b   Conde, J P ^c   Alpuim, P ^d   Chu, V ^d  

^a HEBREW UNIVERSITY OF JERUSALEM   (Israel)

^b UNIVERSITY OF PUERTO RICO   (Puerto Rico)

^c INSTITUTO SUPERIOR TÉCNICO   (Portugal)

^d INESC   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

OXYGEN; SILICON;

ARTICLE; ELECTRON; HYDROGENATION; ISRAEL; MOLECULAR PHYSICS; TEMPERATURE SENSITIVITY;

EID: 0034900392     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.63.113201     Document Type: Article

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