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Volumn 3, Issue 3, 2008, Pages 174-178
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Classification and control of the origin of photoluminescence from Si nanocrystals
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Author keywords
[No Author keywords available]
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Indexed keywords
DEFECTS;
ELECTRONICS INDUSTRY;
III-V SEMICONDUCTORS;
LIGHT;
NANOCRYSTALS;
OPTICAL PROPERTIES;
POROUS SILICON;
QUANTUM THEORY;
HIGH MAGNETIC FIELDS;
LOCALIZED DEFECTS;
PHOTONICS APPLICATIONS;
QUANTUM CONFINEMENT EFFECTS;
QUANTUM-CONFINED STATE;
SOURCE OF LIGHT;
ULTRAVIOLET ILLUMINATION;
VISIBLE WAVELENGTHS;
PHOTOLUMINESCENCE;
HYDROGEN;
NANOCRYSTAL;
SILICON;
ARTICLE;
ELECTRONICS;
MAGNETIC FIELD;
PHOTOLUMINESCENCE;
PHOTON;
POROSITY;
PRIORITY JOURNAL;
QUANTUM CHEMISTRY;
ROOM TEMPERATURE;
SEMICONDUCTOR;
ULTRAVIOLET RADIATION;
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EID: 40449133560
PISSN: 17483387
EISSN: 17483395
Source Type: Journal
DOI: 10.1038/nnano.2008.7 Document Type: Article |
Times cited : (514)
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References (34)
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