Electrical transport phenomena in systems of semiconductor quantum dots

Journal of Nanoscience and Nanotechnology

Volumn 8, Issue 2, 2008, Pages 745-758

  Balberg, Isaac ^a  

^a HEBREW UNIVERSITY OF JERUSALEM   (Israel)

Author keywords

Carrier migration; Coulomb blockade; Percolation; Quantum confinement; Quantum dots; Sequential resonant tunneling; Tunneling

Indexed keywords

OPTOELECTRONIC PROPERTIES; RUDIMENTARY LEVELS; SEQUENTIAL RESONANT TUNNELING; TUNNELING;

COULOMB BLOCKADE; ELECTRIC PROPERTIES; OPTICAL PROPERTIES; PERCOLATION (SOLID STATE); QUANTUM CONFINEMENT; RESONANT TUNNELING; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING SILICON; TRANSPORT PROPERTIES;

SEMICONDUCTOR QUANTUM DOTS;

QUANTUM DOT;

ARTICLE; ELECTRIC CONDUCTIVITY; NANOTECHNOLOGY; SEMICONDUCTOR;

ELECTRIC CONDUCTIVITY; NANOTECHNOLOGY; QUANTUM DOTS; SEMICONDUCTORS;

EID: 42549093165     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2008.A010     Document Type: Conference Paper

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