State distribution in hydrogenated microcrystalline silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 3, 2004, Pages

  Balberg, I ^a   Dover, Y ^a   Naides, R ^a   Conde, J P ^b   Chu, V ^c  

^a HEBREW UNIVERSITY OF JERUSALEM   (Israel)

^b INSTITUTO SUPERIOR TÉCNICO   (Portugal)

^c INESC   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

ARTICLE; CONDUCTOR; CRYSTAL; DENSITY; HYDROGENATION; ION TRANSPORT; MOLECULAR DYNAMICS; NORMAL DISTRIBUTION; SIMULATION; TEMPERATURE DEPENDENCE;

EID: 1442301784     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.035203     Document Type: Article

References (102)

1. R. E. I. Schropp and M. Zeman, Amorphous and Microcrystalline Silicon Solar Cells: Modeling, Materials and Device Technology (Kluwer, Boston, 1998).
2. J. Kocka, H. Stuchlikova, J. Stuchlik, B. Rezek, V. Svrcek, P. Fojtik, I. Pelant, and A. Fejfar, in Polycrystalline Semiconductors VI, Vols. 80–81 of Solid State Phenomena, edited by O. Bonnard, T. Mohammed-Brahim, H. P. Strack, and J. H. Werner (Scitech, Uettikom, 2001), p. 213.
3. J. Kocka, H. Stuchlikova, J. Stuchlik, B. Rezek, V. Svrcek, P. Fojtik, I. Pelant, and A. Fejfar, J. Non-Cryst. Solids, 266-269 (2000).
4. J. Kocka, H. Stuchlikova, J. Stuchlik, B. Rezek, V. Svrcek, P. Fojtik, I. Pelant, and A. Fejfar, J. Non-Cryst. Solids, 299-302 (2002).
5. F. Finger, C. Malten, P. Hapke, R. Carius, R. Fluckiger and H. Wagner, Philos. Mag. Lett., 70, 247 (1994).
6. R. Bruggemann and C. Main, Phys. Rev. B, 57, 15080(R) (1998).
7. Y. Lubianiker, J. D. Cohen, H.-C. Jin and J. R. Abelson, Phys. Rev. B, 60, 4434 (1999).
8. G. Juska, K. Arlauskas, M. Viliunas and J. Kocka, Phys. Rev. Lett., 84, 4946 (2000).
9. D. Will, C. Lerner, W. Fuhs, and K. Lips, in Amorphous and Microcrystalline Silicon Technology–1997, edited by S. Wagner, M. Hack, E. A. Schiff, R. Schropp, and I. Shimuzu MRS Symposia Proceedings No. 467 (Materials Research Society, Pittsburgh, 1997), p. 239
10. L. Houben, M. Luysberg, P. Hapke, R. Carius, F. Finger and H. Wagner, Philos. Mag. A, 77, 1447 (1998);
11. M. Tzolov, F. Finger, R. Carius and P. Hapke, J. Appl. Phys., 81, 7376 (1997).
12. B. G. Budaguan, A. A. Aivazov, A. G. Radoselsky and A. A. Popov (Ref. 8), p. 239.
13. C. Droz, M. Goerlitzer, N. Wyrsch and A. Shah, J. Non-Cryst. Solids, 266-269, 319 (2000).
14. A. G. Kazanskii, H. Mell, E. I. Terukov and P. A. Fonsh, Semiconductors, 34, 367 (2000).
15. R. Carius, F. Finger, U. Backhausen, M. Luysberg, P. Hapke, L. Houben, M. Otte, and H. Overhof, in Amorphous and Microcrystaline Silicon Technology–1997, edited by S. Wagner, M. Hack, E. A. Schiff, R. Schropp, and I. Shimuzu, MRS Symposia Proceedings No. 467 (Materials Research Society, Pittsburgh, 1997), p. 283;
16. H. Overhof, M. Otte, M. Schmidtke, U. Backhausen and R. Carius, J. Non-Cryst. Solids, 227–230, 992 (1998).
17. R. Bruggemann, J. P. Kleider, C. Longeaud, D. Mencaraglia, J. Guillet, J. E. Bour’ee and C. Niikura, J. Non-Cryst. Solids, 266-269, 258 (2000);
18. T. Unold, R. Buggermann, J. P. Kleider and C. Longeaud, J. Non-Cryst. Solids, 266-269, 325 (2000);
19. J. P. Kleider, C. Longeaud, R. Buggermann and F. Houze, Thin Solid Films, 383, 57 (2001).
20. T. Kamiya, K. Nakahata, Y. T. Tan, Z. A. K. Durrani and I. Shimizu, J. Appl. Phys., 89, 6265 (2001).
21. K. Shimakawa, J. Non-Cryst. Solids, 266-269, 223 (2000).
22. G. Lucovsky and H. Overhof, J. Non-Cryst. Solids, 164-166, 973 (1993).
23. Y. Lubianiker, J. D. Cohen, G. Lubensky, Y. Rosenwaks, J. Yang and S. Guha, J. Non-Cryst. Solids, 266–269, 253 (2000).
24. F. Diehl, M. Scheib, B. Schroder and H. Oechsner, J. Non-Cryst. Solids, 227-230, 973 (1998).
25. P. Hapke, F. Finger, R. Carius, H. Wagner, K. Prasad and R. Fluckiger, J. Non-Cryst. Solids, 164-166, 981 (1993);
26. P. Hapke, U. Backhausen, R. Carius, F. Finger, and S. Ray, in Amorphous Silicon Technology–1996, edited by M. Hack, E. A. Schiff, S. Wagner, R. Schropp, and A. Matsuda, MRS Symposia Proceedings No. 420 (Materials Research Society, Pittsburgh, 1996), p. 789.
27. R. B. Wehrspohn, M. J. Powell, S. C. Deane, I. D. French and P. Roca i Cabarrocas, Appl. Phys. Lett., 77, 750 (2000).
28. I. Balberg, R. Naidis, L. F. Fonseca, S. Z. Weisz, J. P. Conde, P. Alpuim and V. Chu, Phys. Rev. B, 63, 113201 (2001).
29. M. H. Cohen, H. Fritzsche and S. R. Ovshinsky, Phys. Rev. Lett., 22, 1065 (1969).
30. I. Balberg, J. Optoelectron. Adv. Mater., 3, 587 (2001).
31. A. Rose, Concepts in Photoconductivity and Allied Problems (Interscience, New York, 1963).
32. S. K. O’Leary and P. K. Lim, Solid State Commun., 101, 513 (1997).
33. Y. Lubianiker and I. Balberg, Phys. Rev. Lett., 78, 2433 (1997);
34. M. Rashotko and I. Balberg, Appl. Phys. Lett., 78, 763 (2001).
35. P. Brogueira, V. Chu, and J. P. Conde, in Amorphous Silicon Technology–1996, edited by M. Hack, E. A. Schiff, A. Madan, M. Powell, and A. Matsuda, MRS Symposia Proceedings No. 377 (Materials Research Society, Pittsburgh, 1995), p. 57;
36. P. Alpuim, V. Chu and J. P. Conde, J. Appl. Phys., 86, 3812 (1999).
37. F. Finger, J. Muller, C. Malten, R. Carius and H. Wagner, J. Non-Cryst. Solids, 266-269, 511 (2000).
38. Y. Lubianiker, I. Balberg and L. F. Fonseca, Phys. Rev. B, 55, R15997 (1997).
39. I. Balberg and R. Naidis, Phys. Rev. B, 57, R6783 (1998);
40. I. Balberg, R. Naidis, M.-K. Lee, J. Shinar and L. F. Fonseca, Appl. Phys. Lett., 79, 197 (2001).
41. H. Overhof and P. Thomas, Electronic Transport in Hydrogenated Amorphous Semiconductors (Springer-Verlag, Berlin, 1989).
42. R. H. Bube, Photoelectronic Properties of Semiconductors (Cambridge University Press, Cambridge, 1992).
43. I. Balberg, J. Appl. Phys., 75, 914 (1994).
44. M. Hack, S. Guha and M. Shur, Phys. Rev. B, 30, 6991 (1984).
45. M. Q. Tran, Philos. Mag. B, 72, 35 (1995).
46. M. Heintze, R. Zellitz, H. N. Wanka and M. B. Schubert, J. Appl. Phys., 79, 2699 (1996).
47. R. Schwarz, T. Murias, J. P. Conde, P. Brogueira, and V. Chu, in Amorphous and Microcrystalline Silicon Technology–1998, edited by R. Schropp, H. M. Branz, M. Hack, I. Shimuzu, and S. Wagner MRS Symposia Proceedings No. 507 (Materials Research socity, Pittsburgh, 1998), p. 799.
48. R. Vanderhaghen, S. Kasouit, R. Brenot, V. Chu, J. P. Conde, F. Liu, A. de Martino and P. Roca i Cabarrocas, J. Non-Cryst. Solids, 299-302, 365 (2002).
49. Y. Chen and S. Wagner, Appl. Phys. Lett., 75, 1125 (1999).
50. I.-C. Cheng and S. Wagner, Appl. Phys. Lett., 80, 440 (2002).
51. O. Bleibaum, H. Bottger and V. V. Bryksin, Phys. Rev. B, 56, 6698 (1997).
52. W. H. Press, B. P. Flannery, S. A. Teukolsky and W. T. Vetterling, Numerical Recipes (Cambridge University Press, Cambridge, 1986), Chap. 9.
53. R. Smith, Semiconductors (Cambridge University Press, Cambridge, 1961).
54. P. T. Landsberg, Recombination in Semiconductors (Cambridge University Press, Cambridge, 1991), Chap. 2.
55. V. I. Arkhipov, E. V. Emilianova and G. J. Adriaenssens, Phys. Rev. B, 64, 125125 (2001);
56. V. I. Arkhipov and G. J. Adriaenssens, Phys. Rev. B, 54, 16696 (1996);
57. D. V. Nikolaenkov, V. I. Arkhipov and V. R. Nikitenko, Semiconductors, 34, 655 (2000)
58. D. A. Drabold, in Properties and Applications of Amorphous Materials, edited by M. F. Thorpe and L. Ticky (Kluwer, Dordrecht, 2001);
59. V. I. Arkhipov, G. J. Adriaenssens and B. J. Yan, Solid State Commun., 100, 471 (1996);
60. S. Grabtchak and M. Cocivera, Phys. Rev. B, 60, 10997 (1999).
61. F. Wang and R. Schwarz, Phys. Rev. B, 52, 14586 (1995).
62. S. Abe and Y. Toyozawa, J. Phys. Soc. Jpn., 50, 2185 (1981);
63. E. N. Economou, C. M. Soukoulis, M. H. Cohen and A. D. Zdetsis, Phys. Rev. B, 31, 6172 (1985).
64. A. A. Klochikhin and S. G. Ogloblin, Phys. Rev. B, 48, 3100 (1993);
65. A. A. Klochikhin, Phys. Rev. B, 52, 10979 (1995).
66. Polycrystalline Semiconductors, edited by G. Harbeke (Springer-Verlag, Berlin, 1985).
67. O. K. B. Lui, S. W. B. Tam, P. Migliorato and T. Shimoda, J. Appl. Phys., 89, 6453 (2001).
68. G. A. Armstrong, J. R. Ayres and S. D. Brotherton, Solid-State Electron., 41, 835 (1997).
69. J. R. Ayres, J. Appl. Phys., 74, 1787 (1993).
70. S. S. Chen and J. B. Kuo, J. Appl. Phys., 79, 1961 (1996).
71. T. J. King, M. G. Hack and I. W. Wu, J. Appl. Phys., 75, 908 (1994).
72. C. A. Dimitriadis, J. Appl. Phys., 73, 4086 (1993).
73. S. Ishida, S. Takaoka, K. Oto, K. Murase, S. Shirai and T. Serikawa, J. Non-Cryst. Solids, 200, 1125 (1996);
74. S. Ishida, S. Takaoka, K. Oto, K. Murase, S. Shirai, T. Serikawa, Appl. Surf. Sci., 114, 685 (1997).
75. W. Fuhs, P. Kanschat and K. Lips, J. Vac. Sci. Technol., 18, 1792 (2000).
76. S. Brehme, P. Kanschat, T. Weis, K. Lips and W. Fuhs, in Polycrystalline Semiconductors VI, Vols. 80–81 of Solid State Phenomena, edited by O. Bonnard, T. Mohammed-Brahim, H. P. Strack, and J. H. Werner (Scitech, Uettikom, 2001), p. 225.
77. D. P. Webb, C. Main, S. Reynolds, Y. C. Chan, Y. U. Lam and S. K. O’Leary, J. Appl. Phys., 83, 4782 (1998);
78. S. Grabtchak, C. Main and S. Reynolds, J. Non-Cryst. Solids, 266, 362 (2000).
79. C. Longeaud and J. P. Kleider, Phys. Rev. B, 45, 11672 (1992).
80. S. Hamma and P. Roca i Cabarrocas, Appl. Phys. Lett., 74, 3218 (1991).
81. A. L. Baia Neto, A. Lambertz, R. Carius and F. Finger, J. Non-Cryst. Solids, 299-302, 274 (2002).
82. P. Kanschat, K. Lips and W. Fuhs, J. Non-Cryst. Solids, 226-269, 524 (2000).
83. M. Pope and C. E. Swenberg, Electronic Processes in Organic Crystals and Polymers, 2nd ed. (Oxford University Press, Oxford, 1999).
84. C. E. Neble, R. A. Street, N. M. Johnson and J. Kocka, Phys. Rev. B, 46, 6789 (1992).
85. S. B. Zhang and H. M. Branz, Phys. Rev. Lett., 84, 967 (2000).
86. R. Krankenhagen, M. Schmidt, S. Grebner, M. Poschenrieder, W. Henrion, I. Sieber, S. Koynov and R. Schwarz, J. Non-Cryst. Solids, 198-200, 923 (1996).
87. D. Karnia, R. P. Barclay and J. M. Boud, J. Non-Cryst. Solids, 137, 375 (1991).
88. H. Shirai and T. Arai, J. Non-Cryst. Solids, 198-200, 931 (1996).
89. S. R. Elliot, Physics of Amorphous Materials (Longman, New York, 1990).
90. C. Godet, Philos. Mag. B, 81, 205 (2001).
91. P. G. LeComber, G. Willeke and W. E. Spear, J. Non-Cryst. Solids, 59-60, 795 (1983).
92. R. Brenot, R. Vanderhaghen, B. Drevillon and P. Roca i Cabarrocas, J. Non-Cryst. Solids, 266-269, 336 (2000).
93. V. I. Arkhipov, E. V. Emelianova and G. J. Adriaenssens, J. Phys.: Condens Matter, 11, 2531 (1999).
94. I. Balberg, Y. Dover, D. Azulay, O. Millo, J. P. Conde and V. Chu, in Proceedings of the 14th International Photovoltaic Science and Engineering Conference, Bangkok (to be published).
95. B. Rezek, C. E. Nebel and M. Stutzmann, J. Non-Cryst. Solids, 266-269, 315 (2000).
96. D. Han, G. Yue, J. D. Lorentzen, J. Lin, H. Habuchi and Q. Wang, J. Appl. Phys., 87, 1882 (2000).
97. P. Bulkin, R. Brenot, B. Drevillon and R. Vanderhagen, J. Non-Cryst. Solids, 231, 268 (1998);
98. A. Heya, A.-Q. He, N. Otsuka and H. Matsumura, J. Non-Cryst. Solids, 227-230, 1016 (1998).
99. U. Haken, M. Hundbausen and L. Ley, J. Non-Cryst. Solids, 166, 497 (1993);
100. Y. Tsutsuni, H. Yamanoto, K. Hattora, H. Okomoto and Y. Hanatiasu, J. Non-Cryst. Solids, 166, 893 (1993).
101. C. E. Nebel and R. A. Street, Philos. Mag. B, 67, 407 (1993).
102. M. Meaudre, R. Meaudre, R. Butt’e, S. Vignoli, C. Longeaud, J. P. Kleider and P. Roca i Cabrrocas, J. Appl. Phys., 86, 946 (1999).