From continuous to quantized charging response of silicon nanocrystals obtained by ultra-low energy ion implantation

Solid-State Electronics

Volumn 49, Issue 7, 2005, Pages 1198-1205

  Shalchian, M ^a,c,d   Grisolia, J ^b   Ben Assayag, G ^a   Coffin, H ^a   Atarodi, S M ^c,d   Claverie, A ^a  

^a CEMES CNRS   (France)

^b INSA   (France)

^c SHARIF UNIVERSITY OF TECHNOLOGY   (Iran)

^d IMRC   (Iran)

Author keywords

CMOS; Coulomb blockade; Quantum dot; Silicon nanocrystal

Indexed keywords

CAPACITORS; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; COULOMB BLOCKADE; CURRENT VOLTAGE CHARACTERISTICS; ION IMPLANTATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM DOTS; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

NEGATIVE DIFFERENTIAL RESISTANCE (NDR); RANDOM TELEGRAPH SIGNAL (RTS); SILICON NANOCRYSTALS; SPECTRUM MAPPING;

NANOSTRUCTURED MATERIALS;

EID: 21444434526     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.04.009     Document Type: Article

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