Radiative versus nonradiative decay processes in silicon nanocrystals probed by time-resolved photoluminescence spectroscopy

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 15, 2004, Pages

  Dovrat, M ^a   Goshen, Y ^a   Jedrzejewski, J ^a   Balberg, I ^a   Sa'ar, A ^a  

^a HEBREW UNIVERSITY OF JERUSALEM   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON; SILICON DIOXIDE;

ARTICLE; CRYSTAL; ENERGY; MICROENVIRONMENT; NANOPARTICLE; OSCILLATION; PHOTOLUMINESCENCE; QUANTUM THEORY; RADIATION; RADIOISOTOPE DECAY; SEMICONDUCTOR; SPECTROSCOPY; TIME;

EID: 42749099678     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.155311     Document Type: Article

References (57)

1. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
2. A. G. Cullis, L. T. Canham, and P. D. J. Calcott, J. Appl. Phys. 82, 909 (1997).
3. W. Theiß, Surf. Sci. Rep. 29, 91 (1997).
4. For a review on porous silicon, see O. Bisi, S. Ossicini, and L. Pavesi, Surf. Sci. Rep. 38, 1 (2000).
5. For a collection of reviews, see Light Emission in Silicon: From Physics to Devices, edited by D. J. Lockwood (Academic, New York, 1998).
6. T. Shimizu-Iwayama, N. Kurumado, D. E. Hole, and P. D. Townsend, J. Appl. Phys. 83, 6018 (1998).
7. J. Linnros, N. Lalic, A. Galeckas, and V. Grivickas, J. Appl. Phys. 86, 6128 (1999).
8. R. K. Soni, L. F. Fonseca, O. Resto, M. Buzaianu, and S. Z. Weisz, J. Lumin. 83-84, 187 (1999).
9. K. Murakami, T. Suzuki, T. Makimura, and M. Tamura, Appl. Phys. A: Mater. Sci. Process. 69, S13 (1999).
10. L. Patrone, D. Nelson, V. I. Safarov, M. Sentis, W. Marine, and S. Giorgio, J. Appl. Phys. 87, 3829 (2000).
11. F. Iacona, G. Franzò, and C. Spinella, J. Appl. Phys. 87, 1295 (2000).
12. G. Ledoux, O. Guillois, D. Porterat, C. Reynaud, F. Huisken, B. Kohn, and V. Paillard, Phys. Rev. B 62, 15942 (2000).
13. L. Bányai and S. W. Koch, Semiconductor Quantum Dots (World Scientific, Singapore 1993).
14. A. P. Alivisatos, Science 271, 933 (1996).
15. G. Ledoux, J. Gong, F. Huisken, O. Guillois, and C. Reynaud, Appl. Phys. Lett. 80, 4834 (2002).
16. M. Ehbrecht, B. Kohn, F. Huisken, M. A. Laguna, and V. Paillard, Phys. Rev. B 56, 6958 (1997).
17. H. Song and X. Bao, Phys. Rev. B 55, 6988 (1997).
18. V.I. Klimov, Ch. Schwarz, D. McBranch, and C. W. White, Appl. Phys. Lett. 73, 2603 (1998).
19. M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, Phys. Rev. Lett. 82, 197 (1999).
20. A. Yu. Kobitski, K. S. Zhuravlev, H. P. Wagner, and D. R. T. Zahn, Phys. Rev. B 63, 115423 (2001).
21. G. Allan, C. Delerue, and M. Lannoo, Phys. Rev. Lett. 76, 2961 (1996).
22. D. Kovalev, E. Gross, N. Künzner, F. Koch, V. Yu. Timoshenko, and M. Fujii, Phys. Rev. Lett. 89, 137401 (2002).
23. E. Gross, D. Kovalev, N. Künzner, J. Diener, F. Koch, V. Yu. Timoshenko, and M. Fujii, Phys. Rev. B 68, 115405 (2003).
24. H. Stolz, Time-Resolved, Light Scattering from Excitons (Springer-Verlag, Berlin, 1994).
25. P. D. Calcott, K. J. Nash, L. T. Canham, M. J. Kane, and D. Brumhead, J. Phys.: Condens. Matter 5, L91 (1993).
26. J. C. Vial, A. Bsiesy, F. Gaspard, R. Hérino, M. Ligeon, F. Muller, R. Romestain, and R. M. Macfarlane, Phys. Rev. B 45, 14171 (1992).
27. L. Pavesi and M. Ceschini, Phys. Rev. B 48, 17625 (1993).
28. D. Kovalev, H. Heckler, G. Polisski, and F. Koch, Phys. Status Solidi B 215, 871 (1999).
29. M. L. Brongersma, P. G. Kik, A. Polman, K. S. Min, and H. A. Atwater, Appl. Phys. Lett. 76, 351 (2000).
30. V. Vinciguerra, G. Franzò, F. Priolo, F. Iacona, and C. Spinella, J. Appl. Phys. 87, 8165 (2000).
31. K. S. Zhuravlev, A. M. Gilinsky, and A. Yu. Kobitsky, Appl. Phys. Lett. 73, 2962 (1998); K. S. Zhuravlev and A. Yu. Kobitsky, Semiconductors 34, 1203 (2003).
32. K. S. Zhuravlev, A. M. Gilinsky, and A. Yu. Kobitsky, Appl. Phys. Lett. 73, 2962 (1998); K. S. Zhuravlev and A. Yu. Kobitsky, Semiconductors 34, 1203 (2003).
33. J. Linnros, A. Galeckas, N. Lalic, and V. Grivickas, Thin Solid Films 297, 167 (1997).
34. A. V. Sachenko, E. B. Kaganovich, E. G. Manoilov, and S. V. Svechnikov, Semiconductors 35, 1383 (2001).
35. C. Garcia, B. Garrido, P. Pellegrino, R. Ferre, J. A. Moreno, J. R. Morante, L. Pavesi, and M. Cazzanelli, Appl. Phys. Lett. 82, 1595 (2003).
36. X. Chen, B. Henderson, and K. P. O'Donnell, Appl. Phys. Lett. 60, 2672 (1992).
37. E. Martin, C. Delerue, G. Allan, and M. Lannoo, Phys. Rev. B 50, 18258 (1994).
38. H. E. Roman and L. Pavesi, J. Phys.: Condens. Matter 8, 5161 (1996).
39. J. Mihalcescu, J. C. Vial, and R. Romestain, J. Appl. Phys. 80, 2404 (1996).
40. L. Pavesi, J. Appl. Phys. 80, 216 (1996).
41. Y. Kanemitsu, Phys. Rev. B 53, 13515 (1996).
42. Qi Zhang, S. C. Bayliss, and D. A. Hutt, Appl. Phys. Lett. 66, 1977 (1995).
43. Y. Posada, I. Balberg, L. F. Fonseca, O. Resto, and S. Z. Wiesz, in Microcrystalline and Nanocrystalline Semiconductors-2000, MRS Symposia Proceedings No. 638, edited by P. M. Fauchet, J. M. Buriak, L. T. Canham, N. Koshida, and B. E. White, Jr. (Materials Research Society, Warrendale PA, 2001), pp. F.14.44.1.
44. B. Abeles, Appl. Solid State Sci. 6, 1 (1976).
45. K. Kim, Phys. Rev. B 57, 13072 (1998).
46. For a review see, K. S. Song and R. T. Williams, Self-Trapped Excitons (Springer-Verlag, Berlin, 1993), Chap. 7.
47. J. Kakalios, R. A. Street, and W. B. Jackson, Phys. Rev. Lett. 59, 1037 (1987).
48. D. Redfield and R. H. Bube, Photoinduced Defects in Semiconductors (Cambridge University Press, Cambridge, 1996).
49. K. Leung and K. B. Whaley, Phys. Rev. B 56, 7455 (1997).
50. T. Takagahara and K. Takeda, Phys. Rev. B 53, R4205 (1996).
51. M. López, B. Garrido, C. Bonafos, A. Pérez-Rodrí guez, and J. R. Morante, Solid-State Electron. 45, 1495 (2001).
52. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley-Interscience, New York, 1981).
53. A. Yariv, Quantum Electronics, 3rd ed. (Wiley-Interscience, New York, 1989).
54. See, C. Delerue, G. Allan, and M. Lannoo, in Light Emission in Silicon: From Physics to Devices (Ref. 5), p. 253.
55. J. B. Khurgin, E. W. Forsythe, G. S. Tompa, and B. A. Khan, Appl. Phys. Lett. 69, 1241 (1996).
56. V. Ranjan, V. A. Singh, and G. C. John, Phys. Rev. B 58, 1158 (1998).
57. D. Kovalev, H. Heckler, M. Ben-Chorin, G. Polisski, M. Schwartzkopff, and F. Koch, Phys. Rev. Lett. 81, 2803 (1998).