Carrier transport in thin films of silicon nanoparticles

Physical Review B - Condensed Matter and Materials Physics

Volumn 56, Issue 8, 1997, Pages 4818-4824

  Burr, T ^a   Seraphin, A ^a   Werwa, E ^a   Kolenbrander, K ^a  

^a Massachusetts Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001615206     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.56.4818     Document Type: Article

References (37)

1. L. Tsybeskov, S. P. Duttagupta, K. D. Hirschman, and P. M. Fauchet, Appl. Phys. Lett. 68, 2058 (1996).
2. H. Mimura, T. Matsumoto, T. Futagi, and Y. Kanemitsu, J. Phys. Soc. Jpn. 63, 203 (1994).
3. W. Lang, P. Steiner, and F. Kozlowski, J. Lumin. 57, 341 (1993).
4. N. Koshida, H. Koyama, Y. Yamamoto, and G. J. Collins, Appl. Phys. Lett. 63, 2655 (1993).
5. F. Namavar, H. P. Maruska, and N. M. Kalkhoran, Appl. Phys. Lett. 60, 2514 (1992).
6. N. Koshida and H. Koyama, Appl. Phys. Lett. 60, 347 (1992).
7. A. Loni, A. J. Simons, T. I. Cox, P. D. J. Calcott, and L. T. Canham, Electron. Lett. 31, 1288 (1995).
8. T. A. Burr, A. A. Seraphin, and K. D. Kolenbrander, in Advanced Luminescent Materials, Electrochemical Society Proceedings, edited by D. J. Lockwood, P. M. Fauchet, N. Koshida, and S. R. J. Brueck (The Electrochemical Society, Pennington, NJ, 1996), Vol. 95-25, p. 324.
9. M. Ben-Chorin, F. Möller, and F. Koch, Phys. Rev. B 49, 2981 (1994).
10. C. Peng, K. D. Hirschman, and P. M. Fauchet, J. Appl. Phys. 80, 295 (1996).
11. L. Tsybeskov, S. P. Duttagupta, and P. M. Fauchet, Solid State Commun. 95, 429 (1995).
12. E. Werwa, A. A. Seraphin, L. A. Chiu, C. Zhou, and K. D. Kolenbrander, Appl. Phys. Lett. 64, 1821 (1994).
13. A. A. Seraphin, E. Werwa, and K. D. Kolenbrander, J. Mater. Res. (to be published).
14. A. A. Seraphin, S.-T. Ngiam, and K. D. Kolenbrander, J. Appl. Phys. 80, 6429 (1996).
15. M. F. Jarrold and J. E. Bower, J. Chem. Phys. 96, 9180 (1992).
16. T. Takagahra and K. Takeda, Phys. Rev. B 46, 15 578 (1992).
17. A. Eychmüller, A. Hasselbarth, L. Katskias, and H. Weller, J. Lumin. 48, 745 (1991).
18. S. Fukatsu, J. Cryst. Growth 157, 1 (1995).
19. M. Ben-Chorin, F. Möller, and F. Koch, J. Appl. Phys. 77, 4482 (1995).
20. I. D. Parker, J. Appl. Phys. 75, 1656 (1994).
21. T. A. Burr and K. D. Kolenbrander, in Surface/Interface and Stress Effects in Electronic Material Nanostructures, edited by S. M. Prokes, R. C. Cammarata, K. L. Wang, and A. Christou, MRS Symposia Proceedings No. 405 (Materials Research Society, Pittsburgh, 1996), p. 271.
22. M. Ben-Chorin, F. Möller, and F. Koch, Phys. Rev. B 51, 2199 (1995).
23. C. Peng and P. M. Fauchet, Appl. Phys. Lett. 67, 2515 (1995).
24. D. J. DiMaria, J. R. Kirtley, E. J. Pakulis, D. W. Dong, T. S. Kuan, F. L. Pesavento, T. N. Theis, and J. A. Cutro, J. Appl. Phys. 56, 401 (1984).
25. E. W. Forsythe, E. A. Whittaker, D. Morton, B. A. Kahn, B. S. Sywe, Y. Lu, S. Liang, C. Gorla, and G. S. Tompa, in Surface/Interface and Stress Effects in Electronic Material Nanostructures (Ref. 21), p. 253.
26. See, for example, J. P. Clerc, G. Giraud, J. M. Laugier, and J. M. Luck, Adv. Phys. 39, 191 (1990).
27. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
28. C. A. Neugubauer and M. B. Webb, J. Appl. Phys. 33, 74 (1962).
29. M. A. Lampert and P. Mark, Current Injection in Solids (Academic, New York, 1970).
30. A. Rose, Phys. Rev. 97, 1538 (1955).
31. L. Tsybeskov, S. P. Duttagupta, K. D. Hirschman, and P. M. Fauchet, Appl. Phys. Lett. 68, 2058 (1996).
32. P. Gonon, A. Deneuville, F. Fontaine, and E. Greeraert, Appl. Phys. Lett. 78, 6633 (1995).
33. K. Natori, J. Appl. Phys. 78, 4543 (1995).
34. L. I. Glazman and R. I. Shekhter, J. Phys., Condens. Matter 1, 5811 (1989).
35. K. Yano, T. Ishii, T. Hashimoto, T. Kobayashi, F. Murai, and K. Seki, Appl. Phys. Lett. 67, 828 (1995).
36. K. Yano, T. Ishii, T. Hashimoto, T. Kobayashi, F. Murai, and K. Seki, IEEE Trans. Electron Devices 41, 1628 (1994).
37. S.-T. Ngiam, K. F. Jensen, and K. D. Kolenbrander, J. Appl. Phys. 76, 8201 (1994).